Zobrazeno 1 - 10
of 79
pro vyhledávání: '"Jeong-Mo Hwang"'
Autor:
Yoonmook Kang, Hae-Seok Lee, Hee Eun Song, Eunwan Cho, Sungeun Park, Donghwan Kim, Ajeet Rohatgi, Kwan Hong Min, Young-Woo Ok, Jeong Mo Hwang, Min Gu Kang
Publikováno v:
Progress in Photovoltaics: Research and Applications. 29:54-63
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0ebf16569957ba7d82403bf2dc7e027
https://doi.org/10.1002/pip.3340
https://doi.org/10.1002/pip.3340
Autor:
Christopher Chen, Jeong-Mo Hwang, Young-Woo Ok, Wook-Jin Choi, Vijaykumar Upadhyaya, Brian Rounsaville, Ajeet Rohatgi
Publikováno v:
Journal of Applied Physics. 132:213302
A negatively charged oxide-nitride-oxide stack for field-effect passivation of crystalline silicon solar cells is discussed. The negative charge was injected into the stack by a plasma charge injection technology. Charge stability was studied by expo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d970e182beda72083501e6c944b6d8c
https://doi.org/10.1063/5.0111681
https://doi.org/10.1063/5.0111681
Autor:
Young-Woo Ok, Christopher T. Chen, Vijay Upadhyaya, Ajay Upadhyaya, Jeong-Mo Hwang, Brian Rounsaville, Wookjin Choi, Ajeet Rohatgi
Publikováno v:
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC).
The plasma charge injection technology reported earlier can be a low-cost alternative to the Al 2 O 3 passivation technology. The charge stability under sunlight exposure is a key concern. We investigated the light-induced loss of injected charge for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0aee468e9b5faf6765b393e09b3f8fe8
https://doi.org/10.1109/pvsc43889.2021.9518912
https://doi.org/10.1109/pvsc43889.2021.9518912
Publikováno v:
Journal of Membrane Science. :58-65
A novel terminally crosslinked block SPES-b membrane was prepared using an azide-assisted thermal curing of sulfonated multiblock poly(arylene ether sulfone). The membrane morphologies and conductivities were investigated as a function of temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91dfbe0f0656fab19e887ece3265de14
https://doi.org/10.1016/j.memsci.2011.12.002
https://doi.org/10.1016/j.memsci.2011.12.002
Autor:
Jong-beom Park, Jae-Sung Roh, Cheong-tae Kim, Jong-woo Yoon, Yong-sik Yu, Jun-sik Lee, Jeong-mo Hwang, Deok-sin Kil
Publikováno v:
Integrated Ferroelectrics. 33:291-301
The effect of annealing conditions for rapid thermal process on the electrical properties of BST thin films was investigated. RTN annealing was very effective for crystallization, however leakage current property was severely degraded due to the loss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d6c45ea60ca2af2f153945eaf13b45e
https://doi.org/10.1080/10584580108222311
https://doi.org/10.1080/10584580108222311
Autor:
Ja-Chun Ku, Jin-Woong Kim, Si-Bum Kim, Jeong-Ho Kim, Choon-Kun Ryu, Su-Youb Lee, Jeong-Mo Hwang, Jae-Seon Yu, Su-Jin Oh, Inazawa Kouichiro
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:1401-1410
We intentionally introduced excessive Si during the SiOxNy film deposition in order to increase the etch selectivity-to-SiOxNy for advanced self-aligned contact (SAC) etching in sub-0.25 μm ultralarge scale integration devices. The SiOxNy layer was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1387c4888891db6273a35b7f7dc65be5
https://doi.org/10.1116/1.582362
https://doi.org/10.1116/1.582362
Publikováno v:
IEEE Electron Device Letters. 20:251-253
In this paper, we report abnormal junction leakage current characteristics in sub-quarter micron CMOS formed by OSELO-II isolation method and high-energy ion implantation for well formation. The phenomena have not been found in other isolation scheme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d943e199b13d07286ed9be01517c56fc
https://doi.org/10.1109/55.761030
https://doi.org/10.1109/55.761030
Publikováno v:
Applied Physics Letters. 74:1833-1835
This letter will present the effects of nitrogen implantation on shallow p+-n junction formation in silicon. The p+-n junctions fabricated at different implantation conditions and heat budgets were characterized by secondary ion mass spectroscopy, cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::406f76f9e3368101cbe0b77f4dd896d1
https://doi.org/10.1063/1.123684
https://doi.org/10.1063/1.123684
Publikováno v:
2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design.
SONOS based 4Mb nvSRAM has been developed which combines a fast access CMOS SRAM array with a highly reliable non-volatile memory array. The overall architecture and operation of the integrated architecture is discussed The non-volatile memory charac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed4ef6b9b06372caa9e006525d75bae1
https://doi.org/10.1109/nvsmw.2008.30
https://doi.org/10.1109/nvsmw.2008.30
Publikováno v:
2007 International Semiconductor Device Research Symposium.
We demonstrated a significant charge loss by a small DC bias applied to the SONOS gate. This charge loss can be correlated with that of a high-temperature bake. A bias acceleration test can be useful for wafer-level retention screening. The results a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e1f98c1322a157f74a149466a4c1b31
https://doi.org/10.1109/isdrs.2007.4422539
https://doi.org/10.1109/isdrs.2007.4422539