Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Jeong-Hee Ha"'
Autor:
Jeong-Hee Ha
Publikováno v:
Korean Society for Critical Inquiry of Childhood Education. 11:5-26
Autor:
Jeong-Hee Ha
Publikováno v:
The Korea Association for Early Childhood Education and Educare Welfare. 23:65-98
Autor:
Jeong-Hee Ha, You-Jeong Kim
Publikováno v:
The Korea Association for Early Childhood Education and Educare Welfare. 21:27-49
Autor:
Jeong-Hee Ha, Jong-Man Lee
Publikováno v:
Journal of Digital Convergence. 15:393-403
Autor:
Piero Pianetta, Husam N. Alshareef, Jeong-Hee Ha, Luigi Colombo, Paul C. McIntyre, Yun Sun, James J. Chambers
Publikováno v:
ECS Transactions. 11:213-218
Photoelectron spectroscopy and transmission electron microscopy provide clear experimental evidence to show that oxygen initially present in the W gate layer of a metal/high-k gate stack is transferred to the substrate and increases the interfacial o
Publikováno v:
Applied Physics Letters. 85:5884-5886
In this letter, we report on phase separation kinetics at initially mixed interfaces of HfO2–SiO2 multilayers measured by low-angle x-ray scattering. Multilayers were fabricated by sputtering and ultraviolet ozone oxidation of ultrathin Hf and Si p
Autor:
Jeong-Hee Ha, Husam AlShareef, Jim Chambers, Yun Sun, Piero Pianetta, Paul McIntyre, Luigi Colombo
Publikováno v:
ECS Meeting Abstracts. :1132-1132
not Available.
Publikováno v:
Applied Physics Letters. 90:112911
Effects of fluorine incorporation on the electrical properties of HfO2∕SiO2 dielectric stacks are investigated through both ab initio simulations and electrical measurements. The results show that F ions are able to remove midgap states resulting f
Publikováno v:
Journal of Applied Physics. 101:033706
Density functional theory simulations of HfO2∕SiO2 interfaces predict the presence of midgap states associated with nonbonding Hf d electrons which result from the reduced oxygen coordination of near-interface Hf ions. These states are expected to
Publikováno v:
Journal of Digital Convergence. Feb2017, Vol. 15 Issue 2, p393-403. 11p.