Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Jeong-Do Yang"'
Publikováno v:
Journal of Sensor Science and Technology. 22:105-110
We fabricated an a-IGZO thin film transistor (TFT) with AZO/Ag/AZO transparent multilayer source/drain contacts by rf magnetron sputtering. a-IGZO TFT with AZO/Ag/AZO multilayer S/D electrodes (W/L = 400/50 µm) showed a subs-threshold swing of 3.78
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89e4956d937bac44be4ab88baf073e44
https://doi.org/10.5369/jsst.2013.22.2.105
https://doi.org/10.5369/jsst.2013.22.2.105
Autor:
Byoung Wook Kwon, Won Kook Choi, Chang-Lyoul Lee, Hyunbok Lee, Dong Hee Park, Jeong Do Yang, Dong Ick Son, Won Seon Seo, Yeonjin Yi
Publikováno v:
Nano Research. 5:747-761
ZnO-graphene quasi core-shell quantum dot (QD) structures in which the inner ZnO QDs are covered with graphene nanoshells have been synthesized via a simple solution process method. The outer graphene nanoshells were identified as a single graphene l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::868bf7a6ddfc38ae3968dae9a8e16f8e
https://doi.org/10.1007/s12274-012-0258-6
https://doi.org/10.1007/s12274-012-0258-6
Autor:
Tae Woo Hong, Se Hee Cho, Kyung Hwa Yoo, Dong Ick Son, Won Kook Choi, Jeong Do Yang, Dong Hee Park
Publikováno v:
Thin Solid Films. 520:6215-6220
Transparent conducting multilayer structured electrode of a few nm Ag layer embedded in tin oxide thin film SnO x /Ag/SnO x was fabricated on a glass by RF magnetron sputtering at room temperature. The multilayer of the SnO x (40 nm)/Ag(11 nm)/SnO x
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b77b71254def752d0080316425ada08
https://doi.org/10.1016/j.tsf.2012.05.029
https://doi.org/10.1016/j.tsf.2012.05.029
Autor:
Sung In Kim, Kyung Hwa Yoo, Jeong Do Yang, Chi Won Ahn, Kyumin Lee, Hye Mi So, Nalae Han, Hyunchul Sohn
Publikováno v:
Advanced Materials. 23:1871-1875
nanowires show considerable promise as building blocks for phase-change random access memory (PRAM). Phase-change materials are used in nonvolatile optical memory (e.g., CDs and DVDs), and are being actively inves-tigated as the media in universal so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03407a21eee2fb5eefd4e6f34e4e7d2f
https://doi.org/10.1002/adma.201004746
https://doi.org/10.1002/adma.201004746
Autor:
Nalae, Han, Sung In, Kim, Jeong-Do, Yang, Kyumin, Lee, Hyunchul, Sohn, Hye-Mi, So, Chi Won, Ahn, Kyung-Hwa, Yoo
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 23(16)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::c4b35868c234ce2a60f07fdc1b1587d0
https://pubmed.ncbi.nlm.nih.gov/21432914
https://pubmed.ncbi.nlm.nih.gov/21432914
Autor:
Jeong-Do Yang, Il-Woo Ok, Jung-Min Cho, Dong-Hee Park, Won-Suk Shin, Kyoung-Gon Kim, Sang-Jin Moon, Kyung-Hwa Yoo, Won-Kook Choi
Publikováno v:
Japanese Journal of Applied Physics. 51:10NE07
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02f1c707108da13773a8e332dbdf06c1
https://doi.org/10.7567/jjap.51.10ne07
https://doi.org/10.7567/jjap.51.10ne07
Autor:
Jung Min Cho, Kyung Hwa Yoo, Won Suk Shin, Dong Hee Park, Jeong Do Yang, Won Kook Choi, Sang Jin Moon, Il Woo Ok, Kyoung Gon Kim
Publikováno v:
Japanese Journal of Applied Physics. 51:10NE07
We fabricated the organic photovoltaic (OPV) cells on the transparent and low resistive multilayer electrode of a few nm Ag layer embedded Al doped zinc oxide film (AZO/Ag/AZO) on a glass. AZO and Ag consisting of the continuous multilayer were fabri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e62f0c054dd49b5cd611fb65db54c9d
https://doi.org/10.1143/jjap.51.10ne07
https://doi.org/10.1143/jjap.51.10ne07
Publikováno v:
Korean Journal of Materials Research. 20:629~635-629~635
In this study characteristics of Al-doped ZnO thin film by HIPIMS (High power impulse sputtering) are discussed. Deposition speed of HIPIMS with conventional balanced magnetic field is measured at about 3 nm/min, which is 30% of that of conventional
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da6f44a03f773d7f54779532baca5a81
https://doi.org/10.3740/mrsk.2010.20.12.629
https://doi.org/10.3740/mrsk.2010.20.12.629