Zobrazeno 1 - 10
of 93
pro vyhledávání: '"Jeong Sun Moon"'
Publikováno v:
Micromachines, Vol 15, Iss 11, p 1356 (2024)
Graded AlGaN channel High-Electron Mobility Transistor (HEMT) technology is emerging as a strong candidate for millimeter-wave applications, as superior efficiency and linearity performances can be achieved. In this paper, graded channel AlGaN/GaN HE
Externí odkaz:
https://doaj.org/article/2802957f54784e2687088729cf6bce99
Autor:
Nicholas C. Miller, Andrea Arias-Purdue, Erdem Arkun, David Brown, James F. Buckwalter, Robert L. Coffie, Andrea Corrion, Daniel J. Denninghoff, Michael Elliott, Dave Fanning, Ryan Gilbert, Daniel S. Green, Florian Herrault, Ben Heying, Casey M. King, Eythan Lam, Jeong-Sun Moon, Petra V. Rowell, Georges Siddiqi, Ioulia Smorchkova, Joe Tai, Jansen Uyeda, Mike Wojtowicz
Publikováno v:
IEEE Journal of Microwaves, Vol 3, Iss 4, Pp 1134-1146 (2023)
This article presents a set of measured benchmarks for the noise and gain performance of six different millimeter-wave (mm-wave) gallium nitride (GaN) high electron mobility transistor (HEMT) technologies fabricated at four different foundries in the
Externí odkaz:
https://doaj.org/article/5804e21f09df408e99c176f577a6bee9
Autor:
Jeong-Sun Moon, Bob Grabar, Joel Wong, Chuong Dao, Erdem Arkun, Haw Tai, Dave Fanning, Nicholas C. Miller, Michael Elliott, Ryan Gilbert, Nivedhita Venkatesan, Patrick Fay
Publikováno v:
IEEE Microwave and Wireless Technology Letters. 33:161-164
Autor:
Christopher Malek, Dao Chuong, Patrick Fay, Bob Grabar, Nivedhita Venkatesan, Peter Chen, Jeong-Sun Moon, David Fanning, Erdem Arkun, Joel Wong, Didiel Vazquez Morales
Publikováno v:
IEEE Electron Device Letters. 42:796-799
We report 60-nm gate-length graded-channel AlGaN/GaN HEMTs fabricated with a mini-field-plate T-gate. The devices exhibit an extrinsic fT and $\text{f}_{\text {MAX}}$ of 156 GHz and 308 GHz, respectively. At 60-nm gate length, the fT*Lg of 9.4 GHz $\
Publikováno v:
2022 Device Research Conference (DRC).
Autor:
Jeong-Sun Moon, Bob Grabar, Joel Wong, Joe Tai, Erdem Arkun, Didiel V. Morales, Chuong Dao, Shyam Bharadwaj, Dave Fanning, Nivedhita Venkatesan, Patrick Fay
Publikováno v:
2022 IEEE/MTT-S International Microwave Symposium - IMS 2022.
Autor:
Patrick Fay, Bob Grabar, James M. Chappell, Peter Chen, Isaac Khalaf, Erdem Arkun, Jeong-Sun Moon, M. Antcliffe, Nivedhita Venkatesan, Joel Wong, Andrea Corrion
Publikováno v:
IEEE Electron Device Letters. 41:1173-1176
We report scaled, graded-channel AlGaN/GaN HEMTs with an extrinsic fT and fMAX of 170 GHz and 363 GHz, which is the highest in emerging graded-channel GaN HEMTs. At 50-nm gate length, the fT*Lg of 8.5 GHz $\ast \mu \text{m}$ is comparable to that of
Autor:
Jeong-sun Moon, Bob Grabar, Joel Wong, Chuong Dao, Erdem Arkun, Didiel V. Morales, Joe Tai, Dave Fanning, Nivedhita Venkatesan, Patrick Fay
Publikováno v:
2022 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR).
Publikováno v:
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Autor:
Patrick Fay, Isaac Khalaf, R. Grabar, Erdem Arkun, Andrea Corrion, J. Wong, P. Chen, James M. Chappell, M. Antcliffe, Nivedhita Venkatesan, Jeong-Sun Moon
Publikováno v:
Electronics Letters. 56:678-680
The authors report on highly scaled 60 nm gate length graded-channel AlGaN/GaN high electron mobility transistors (HEMTs) with a record power added efficiency (PAE) of 75% at 2.1 W/mm power density at Vdd = 10 V and the PAE of 65% at 3.0 W/mm power d