Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Jeong Ho Yeo"'
Autor:
Woosung Jung, Jong-Hoi Cho, SungHun Lim, TaeSeop Lee, DaeYoung Choi, Jong-Hyun Seo, SeungHyun Lee, JunKyoung Lee, You Jin Kim, Jeong Ho Yeo, Alex Brikker, Roi Meir, Ran Alkoken, Kyeongju Han, Sujin Lim, KyungJae Choi, Chanhee Kwak, Hyeon Sang Shin
Publikováno v:
Metrology, Inspection, and Process Control XXXVII.
Autor:
Sangho Jo, Jongsu Kim, Youngsik Park, Muyoung Lee, Jinhong Park, Chang-Min Park, Jeong Ho Yeo, Yaniv Abramovitz, You Jin Kim, Asaf Shoham, Shmuel Ben Nissim
Publikováno v:
Metrology, Inspection, and Process Control XXXVII.
Autor:
Taekwon Jee, Joonsang You, Hong-Goo Lee, Sang-Ho Lee, Seungmo Hong, Jaewook Seo, Roi Meir, Noam Oved, Jun Park, Shin-Ik Kim, Byung-Jo Lim, Chan-Hee Kwak, Jeong-Ho Yeo
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Publikováno v:
Metrology, Inspection, and Process Control XXXVI.
Publikováno v:
Microelectronic Engineering. 123:48-53
Graphical abstractDisplay Omitted Local critical dimension uniformity of sub-30nm contact holes is a concern in EUVL.Resist and mask contributions to local CDU are assessed in three independent ways.Three budget breakdown methods show consistently 80
Autor:
Jeong-ho Yeo, Boo-Hyun Ham, Jin-Seok Heo, Hoyeon Kim, Soon Mok Ha, Joon-Soo Park, Suk-Woo Nam
Publikováno v:
Microelectronic Engineering. 110:66-69
In semiconductor manufacturing below 45nm node, immersion lithography is serious technique to increase depth of focus (DOF) at obtainable apertures and to improve resolution with apertures higher than one. However, immersion environment between wafer
Publikováno v:
Microelectronic Engineering. 98:595-598
This paper illustrates the improvement of the effective focus monitoring methods which use the forbidden pitch patterns, so called, forbidden pitch focus monitoring (FPFM). However, as it measures the patterning profile variation by defocus, noise ca
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26:2337-2340
According to the 2007 international technology roadmap for semiconductors, the overlay budget of 60nm memory devices is 11.3nm. To meet such a tight requirement, each overlay error budget should be controlled carefully. It turns out that scanner cont
Autor:
Sang-Hyun Kim, Dongwan Kim, Myoung-Soo Hwang, Hyun-Woo Kim, Soon-Nam Kang, Insung Kim, Jeong-ho Yeo, Seong-Sue Kim, Cheolhong Park, Chang-min Park
Publikováno v:
SPIE Proceedings.
Though scaling of source power is still the biggest challenge in EUV lithography (EUVL) technology era, CD and overlay controls for transistor‟s requirement are also precondition of adopting EUVL in mass production. Two kinds of contributors are id
Publikováno v:
SPIE Proceedings.
Surface roughness(SR) of the EUV resists exposed to EUV, ArF and KrF radiation has been investigated using three tools: spectroscopic ellipsometry (SE), AFM and SEM. The purpose of this paper is to do determine whether SE can effectively monitor the