Zobrazeno 1 - 10
of 66
pro vyhledávání: '"Jeong, Hyong"'
Coumarins from Angelica decursiva inhibit α-glucosidase activity and protein tyrosine phosphatase 1B
Autor:
Ali, Md Yousof, Jannat, Susoma, Jung, Hyun Ah, Jeong, Hyong Oh, Chung, Hae Young, Choi, Jae Sue
Publikováno v:
In Chemico-Biological Interactions 25 May 2016 252:93-101
Autor:
Jung, Hyun Ah, Ali, Md Yousof, Choi, Ran Joo, Jeong, Hyong Oh, Chung, Hae Young, Choi, Jae Sue
Publikováno v:
In Food and Chemical Toxicology March 2016 89:104-111
Akademický článek
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Autor:
Yi, Jeong-Hyong, Lee, Sang-Don, Ahn, Jin-Hong, Shin, Hyungcheol, Park, Young-June, Min, Hong Shick
Publikováno v:
In Microelectronic Engineering 17 June 2005 80:329-332
Autor:
Sung-Kye Park, Jeong-Hyong Yi, Sung-Min Joe, Byung-Gook Park, Jong-Ho Lee, Young June Park, Hyungcheol Shin
Publikováno v:
IEEE Transactions on Electron Devices. 58:67-73
Read current fluctuation (ΔIread) due to random telegraph noise was measured from a cell in a NAND flash memory cell string, and its effect on threshold voltage fluctuation (ΔVth) was analyzed. Sixteen-level fluctuation (four traps) was observed in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e6beea34c0881bf7897ef784ef167bc
https://doi.org/10.1109/ted.2010.2088126
https://doi.org/10.1109/ted.2010.2088126
Publikováno v:
Japanese Journal of Applied Physics. 47:2544-2547
This paper describes device degradation and mobility characteristics for germanium (Ge)-channel p-type metal–oxide–semiconductor field-effect transistors (pMOSFETs) with HfO2 gate dielectrics. In order to understand the effect of trapped charges
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4acf2beb547decfa9011bfb06b368edc
https://doi.org/10.1143/jjap.47.2544
https://doi.org/10.1143/jjap.47.2544
Autor:
Hong Shick Min, Jeong-Hyong Yi, Seonghoon Jin, Jaehoon Choi, Dae Gwan Kang, Inyoung Chung, Young June Park, Myoung Jin Lee
Publikováno v:
IEEE Transactions on Electron Devices. 53:2344-2350
The authors have developed an efficient and accurate method to obtain the data retention time distribution of DRAM from the physics-based device simulation and the numerical integration of the probability space composed of three independent random va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8db6fc6de69dded4711e61d23d91e4a1
https://doi.org/10.1109/ted.2006.880821
https://doi.org/10.1109/ted.2006.880821
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 6:334-342
In order to explain polarity-dependent device degradation observed in polysilicon-oxide-nitride-oxide-silicon (SONOS) transistors, a physics-based model is proposed. Comparing the trends in polarity-dependent electrical characteristics between two di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee4fbbabec42dd6dde7aef3f2b61f268
https://doi.org/10.1109/tdmr.2006.876614
https://doi.org/10.1109/tdmr.2006.876614
Publikováno v:
IEEE Transactions on Electron Devices. 52:2422-2429
We have developed a comprehensive TCAD framework that can predict the data retention time distribution of a dynamic random access memory (DRAM) chip using the information about the designed cell transistor by coupled physics-based device and statisti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a2116c6904a9c69baaae9716dc683f3
https://doi.org/10.1109/ted.2005.857185
https://doi.org/10.1109/ted.2005.857185
Publikováno v:
Microelectronic Engineering. 80:329-332
The cause of the device degradation in a SONOS structure has been investigated with using two different gate dielectric structures of the stacked oxide-nitride-oxide (ONO) and conventional single-layered oxide. It is found that the device degradation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0948f73c34cfccd496d93391e61e159b
https://doi.org/10.1016/j.mee.2005.04.086
https://doi.org/10.1016/j.mee.2005.04.086