Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Jens-Uwe Sachse"'
Autor:
Yoo Seon Song, Markus Lenski, Mohammed F. Karim, Keith Flynn, Jan Hoentschel, Carsten Peters, Jens-Uwe Sachse, Omur Isil Aydin, Jun Wu, Bastian Hausdorfer, Mahesh Siddabathula, Konrad Semmler, Jurgen Daleiden
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 627-636 (2024)
The motivation of this study was to solve the high $\rm I_{D,off}$ problem in 8 Volt N-channel MOSFET. We experimented with implanting nitrogen into LDD at various doses. As a result, $\rm I_{D,off}$ increases and $\rm BV_{DSS}$ decreases as the dose
Externí odkaz:
https://doaj.org/article/d77d4e1cd30946fbb5080720e9583d00
Autor:
David Barge, Cyrille Le Royer, Anita Peeva, Thomas Feudel, Jens-Uwe Sachse, Heyne Tobias, Judson R. Holt, Aydin Omur Isil, Timothy J. McArdle, Markus Lenski, Christoph Klein, Laks Vanamurthy, Alexis Divay, Carsten Peters, Mulfinger George R, Elliot John Smith, Dirk Utess, Ralf Gerber, Steffen Lehmann, Sören Jansen
Publikováno v:
ECS Transactions. 86:199-206
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3819cee07309788290de4beede1db09c
https://doi.org/10.1149/08607.0199ecst
https://doi.org/10.1149/08607.0199ecst
Autor:
Ömür Işıl Aydin, Judson Robert Holt, Laks Vanamurthy, Thomas Feudel, Cyrille Le Royer, Tobias Heyne, Ralf Gerber, Markus Lenski, George Robert Mulfinger, Timothy J McArdle, Sören Jansen, Dirk Utess, Christoph Klein, Anita Peeva, David Barge, Alexis Divay, Steffen Lehmann, Elliot Smith, Carsten Peters, Jens-Uwe Sachse
Publikováno v:
ECS Meeting Abstracts. :1072-1072
Recently, a 22nm fully depleted gate-first SOI technology (FDSOI) has shown significant promise as a low-cost alternative to FinFETs with devices that are tunable between low-leakage and high-performance regimes. [1] The 22nm FDSOI PFET utilizes a Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b7276ffa88fa0c2f0ac48deaf01e592
https://doi.org/10.1149/ma2018-02/31/1072
https://doi.org/10.1149/ma2018-02/31/1072