Zobrazeno 1 - 10
of 75
pro vyhledávání: '"Jens Trommer"'
Autor:
Maximilian Reuter, Johannes Wilm, Andreas Kramer, Niladri Bhattacharjee, Christoph Beyer, Jens Trommer, Thomas Mikolajick, Klaus Hofmann
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 310-317 (2024)
In integrated circuit design compact models are the abstraction layer which connects semiconductor physics and circuit simulation. Established compact models like BSIM provide a powerful platform for many kinds of conventional MOSFETs. However, novel
Externí odkaz:
https://doaj.org/article/9ee43f8105054b21b3749184e3611ce5
Autor:
Maximilian Reuter, Andreas Kramer, Dakyung Lee, Jens Trommer, Niladri Bhattacharjee, Giulio Galderisi, Thomas Mikolajick, Klaus Hofmann
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 56-64 (2024)
Circuit design requires fast and scalable models which are compatible to modern electronic design automation tools. For this task typically analytical compact models are preferred. However, for emerging device concepts with altered conduction mechani
Externí odkaz:
https://doaj.org/article/db374d8dcd9d4415a16e110c05bda59f
Autor:
Soundarya Nagarajan, Daniel Hiller, Ingmar Ratschinski, Dirk König, Sean C. Smith, Thomas Mikolajick, Jens Trommer
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 1, Pp n/a-n/a (2024)
Abstract Doping silicon on the nanoscale by the intentional introduction of impurities into the intrinsic semiconductor suffers from effects such as dopant deactivation, random dopant fluctuations, out‐diffusion, and mobility degradation. This pape
Externí odkaz:
https://doaj.org/article/cc872ae237864610802310a42741a084
Autor:
Maik Simon, Halid Mulaosmanovic, Violetta Sessi, Maximilian Drescher, Niladri Bhattacharjee, Stefan Slesazeck, Maciej Wiatr, Thomas Mikolajick, Jens Trommer
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-9 (2022)
Designing efficient reconfigurable field effect transistors remains a challenge. Here, the authors develop a transistor with three distinct operation modes, realized directly on an industrial 22nm FDSOI platform, demonstrating a reconfigurable analog
Externí odkaz:
https://doaj.org/article/8c598e9616c34c8ba276b279462da4e0
Autor:
Christian Roemer, Ghader Darbandy, Mike Schwarz, Jens Trommer, Andre Heinzig, Thomas Mikolajick, Walter M. Weber, Benjamin Iniguez, Alexander Kloes
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 416-423 (2022)
A closed-form and physics-based compact model is presented for calculating the DC characteristics of Schottky barrier field-effect transistors and dual gated reconfigurable field-effect transistors. The given model calculates the charge-carrier injec
Externí odkaz:
https://doaj.org/article/e7a6752fe9fb43a7b35b54c1a5d279c7
Publikováno v:
InfoMat, Vol 4, Iss 10, Pp n/a-n/a (2022)
Abstract As the dimensions of the transistor, the key element of silicon technology, are approaching their physical limits, developing semiconductor technology with novel concepts and materials has been the main focus of scientific research and indus
Externí odkaz:
https://doaj.org/article/80e5bc70ee1545a5bdabe6dd0d63efd6
Autor:
Evelyn T. Breyer, Halid Mulaosmanovic, Jens Trommer, Thomas Melde, Stefan Dunkel, Martin Trentzsch, Sven Beyer, Stefan Slesazeck, Thomas Mikolajick
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 748-756 (2020)
Due to their CMOS compatibility, hafnium oxide based ferroelectric field-effect transistors (FeFET) gained remarkable attention recently, not only in the context of nonvolatile memory applications but also for being an auspicious candidate for novel
Externí odkaz:
https://doaj.org/article/649587937bf34c2a8df0201a7564680f
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 740-747 (2020)
Charge sharing poses a fundamental problem in the design of dynamic logic gates, which is nearly as old as digital circuit design itself. Although, many solutions are known, up to now most of them add additional complexity to a given circuit and requ
Externí odkaz:
https://doaj.org/article/cc03a511da034c868fa5ef4ccbd61773
Autor:
Michael Raitza, Steffen Marcker, Jens Trommer, Andre Heinzig, Sascha Kluppelholz, Christel Baier, Akash Kumar
Publikováno v:
IEEE Access, Vol 8, Pp 112598-112614 (2020)
We present a new approach for early analysis of logic gates that is based on formal methods. As device technology research takes years and is very expensive, it is desirable to evaluate a technology's potential as early as possible, which is hard to
Externí odkaz:
https://doaj.org/article/19ff43eced4f415c892ed0eb026b0437
Autor:
Jian Zhang, Jens Trommer, Walter Michael Weber, Pierre-Emmanuel Gaillardon, Giovanni De Micheli
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 6, Pp 452-456 (2015)
Dual-independent-gate silicon FinFET has demonstrated a steep subthreshold slope (SS) when a positive feedback induced by weak impact ionization is triggered. In this paper, we study the temperature dependency of the steep SS by characterizing the fa
Externí odkaz:
https://doaj.org/article/15dad28885cf49a69b91c8d5a7746808