Zobrazeno 1 - 10
of 84
pro vyhledávání: '"Jens Rass"'
Autor:
Tim Kolbe, Arne Knauer, Jens Rass, Hyun Kyong Cho, Sylvia Hagedorn, Sven Einfeldt, Michael Kneissl, Markus Weyers
Publikováno v:
Materials, Vol 10, Iss 12, p 1396 (2017)
The effects of composition and p-doping profile of the AlGaN:Mg electron blocking layer (EBL) in 310 nm ultraviolet B (UV-B) light emitting diodes (LEDs) have been investigated. The carrier injection and internal quantum efficiency of the LEDs were s
Externí odkaz:
https://doaj.org/article/4f430c45dcd74a94b4a0f917eac4ccf7
Autor:
Tim Kolbe, Arne Knauer, Jens Rass, Hyun Kyong Cho, Sylvia Hagedorn, Fedir Bilchenko, Anton Muhin, Jan Ruschel, Michael Kneissl, Sven Einfeldt, Markus Weyers
Publikováno v:
Applied Physics Letters. 122
Far-ultraviolet-C (far-UVC) light-emitting diodes (LEDs) with an emission wavelength of 234 nm with different polarization-doped AlGaN hole injection layers (HILs) are compared regarding their emission power, voltage, and leakage current. The influen
Autor:
Jakob Höpfner, Priti Gupta, Martin Guttmann, Jan Ruschel, Johannes Glaab, Tim Kolbe, Jens Rass, Arne Knauer, Christoph Stölmacker, Sven Einfeldt, Tim Wernicke, Markus Weyers, Michael Kneissl
Publikováno v:
Applied Physics Letters. 122:151104
The electroluminescence of UVB light-emitting diodes emitting at 310 nm before and after 1000 h of operation is studied in the temperature range from 20 to 340 K. Before operation, the external quantum efficiency (EQE) at 10 mA gradually increases wi
Autor:
Jan Ruschel, Jens W. Tomm, Johannes Glaab, Tim Kolbe, Arne Knauer, Jens Rass, Neysha Lobo-Ploch, Tamukanashe A. Musengezi, Sven Einfeldt
Publikováno v:
Applied Physics Letters. 122:131103
InAlGaN-based UVB light-emitting diodes with an emission wavelength of 310 nm were operated at an elevated nominal current density of 200 A/cm2 and a heatsink temperature of 29 °C. The spatial intensity distributions of the electroluminescence and p
Autor:
Neysha Lobo Ploch, Hyun Kyong Cho, Thomas Filler, Johannes Glaab, Heiko Gundlach, Martin Guttmann, Sylvia Hagedorn, Frank Mehnke, Jens Rass, Jan Ruschel, Marcel Schilling, Luca Sulmoni, Tim Wernicke, Lucas Wittenbecher, Ulrike Woggon, Axel Kramer, Martina C. Meinke, Michael Kneissl, Markus Weyers, Ulrike Winterwerber, Sven Einfeldt
Publikováno v:
Light-Emitting Devices, Materials, and Applications XXVI.
Autor:
Thorsten Garbe, Jens Rass
Publikováno v:
Zeitschrift für Didaktik der Rechtswissenschaft. 7:142-150
Die Autoren bieten im Rahmen des sogenannten Ausbildungsverbundes der nord- und ostdeutschen Landesjustizverwaltungen (Nordverbund)1 das einwöchige Seminar „Tatsachenfeststellung vor Gericht“ an. Dieses richtet sich an junge Richterinnen und Ric
Autor:
Christoph Stölmacker, N. Lobo Ploch, Jan Ruschel, Frank Schnieder, S. Hochheim, Anna Mogilatenko, Tim Kolbe, Sven Einfeldt, Jens Rass, A. Thies, S. Knigge
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 9:2326-2331
A bonding technology using electroplated Au microstuds for ultraviolet (UV) light-emitting diodes (LEDs) has been investigated. Au studs with diameter, height, and pitch of about 15, 8, and $30~\mu \text{m}$ , respectively, were electroplated on stan
Autor:
Anton Muhin, Martin Guttmann, Verena Montag, Norman Susilo, Eviathar Ziffer, Luca Sulmoni, Sylvia Hagedorn, Neysha Lobo-Ploch, Jens Rass, Leonardo Cancellara, Shaojun Wu, Tim Wernicke, Michael Kneissl
Publikováno v:
physica status solidi (a). :2200458
Publikováno v:
BJUI Compass, Vol 5, Iss 1, Pp 159-165 (2024)
Abstract Objectives The objective of this study is to evaluate the prevalence and the importance of preperitoneal vas deferens (VD) infiltration in high‐risk prostate cancer (PCa). Patients and Methods In this prospectively designed study, we inclu
Externí odkaz:
https://doaj.org/article/585337f2aa434e8c9eab9b79b8910fd8
Autor:
Sebastian Walde, Johannes Enslin, Tim Wernicke, Michael Kneissl, Luca Sulmoni, Hyun Kyong Cho, Norman Susilo, Martin Guttmann, Johannes Glaab, Neysha Lobo-Ploch, Giulia Cardinali, Carsten Netzel, Markus Weyers, Jan Ruschel, Marcel Schilling, Christian Kuhn, S. Hagedorn, Jens Rass, U. Winterwerber, Frank Mehnke, Sven Einfeldt
Publikováno v:
2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC).
Driven by a wide range of applications, as shown in Fig. 1(a) , the development of AlGaN-based light emitting diodes in the deep ultraviolet spectral range (DUV-LEDs) has greatly intensified. In contrast to conventional ultraviolet sources UV-LEDs ex