Zobrazeno 1 - 10
of 107
pro vyhledávání: '"Jens Gobrecht"'
Publikováno v:
CHIMIA, Vol 56, Iss 10 (2002)
The defined fabrication of nanostructures on surfaces for the nanosciences today largely relies on tools such as scanning probe instruments or electron- and ion beam systems that are serial writing processes. For future production of components and d
Externí odkaz:
https://doaj.org/article/dcb5025f52ec42d9ba64028d81119951
Publikováno v:
CHIMIA, Vol 54, Iss 1-2 (2000)
New and very stable model catalysts have been developed. Two types of samples on oxidized 4-inch wafers were produced using processes that are generally employed in semiconductor device technology. A single wafer exhibits 109 to 1010 active sites on
Externí odkaz:
https://doaj.org/article/670263af52ac4b0c9a607132f055de69
Autor:
Cristina Africh, Heinz Amenitsch, Graham Arthur, Fernando Cacho-Nerin, Regina Ciancio, Dan Cojoc, Stefano Cozzini, Zheng Cui, Christian David, Stefano Fabris, Roberta Ferranti, Luis Fonseca, Jordi Fraxedas, Jens Gobrecht, Roberto Gotter, Justin Greenhalgh, Ejaz Huq, Karin Jungnikl, Peter Laggner, Emilio Lora-Tamayo, Benedetta Marmiroli, Daniela Orani, Giancarlo Panaccione, Michael Rappolt, Giorgio Rossi, Barbara Sartori, Massimo Tormen
Nanoscience and nanotechnology are broad domains of research and innovation that represent a major fi eld of activity at global level. This originates from the outstanding demonstrations obtained in the last two decades of the possibility to control
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de5dc1420f4d16c4ba907771b0937bf6
Autor:
Ulrike Grossner, Jens Gobrecht, Christof W. Schneider, Judith Woerle, Hans Sigg, Massimo Camarda
Publikováno v:
Materials Science Forum, 897
Silicon Carbide and Related Materials 2016
Silicon Carbide and Related Materials 2016
In this study, electrical properties of MOS capacitors with varying oxide thicknesses have been investigated. The oxide growth was performed at 1050 °C without any further post-oxidation annealing steps resulting in oxide thicknesses between 2 nm an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8e52de83a1b441997d2bd32cf6269178
https://doi.org/10.4028/www.scientific.net/msf.897.119
https://doi.org/10.4028/www.scientific.net/msf.897.119
Autor:
Armin Kleibert, Waiz Karim, Jens Gobrecht, Joost VandeVondele, Jeroen A. van Bokhoven, Yasin Ekinci, Clelia Spreafico
Publikováno v:
Nature. 541:68-71
Hydrogen spillover is the surface migration of activated hydrogen atoms from a metal catalyst particle, on which they are generated, onto the catalyst support. The phenomenon has been much studied and its occurrence on reducible supports such as tita
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4b3fb03dbb2c0403ef1470927075666d
https://doi.org/10.1038/nature20782
https://doi.org/10.1038/nature20782
Publikováno v:
Microelectronic Engineering. 161:104-108
Printing of sub-100nm half-pitch periodic structures is demonstrated using Displacement Talbot Lithography (DTL) and a deep ultra-violet light source. DTL is a recently developed mask-based photolithography for forming high-resolution periodic struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::904408af9a21a535b423ed96d02331e6
https://doi.org/10.1016/j.mee.2016.04.017
https://doi.org/10.1016/j.mee.2016.04.017
Autor:
Ernst Meyer, Frederic Zanella, Nenad Marjanovic, Thomas A. Jung, Alexander Bubendorf, H. Bartolf, H.R. Rossmann, Marc Schnieper, Jens Gobrecht, R.A. Minamisawa
Publikováno v:
Microelectronic Engineering. 145:166-169
The aim of this study is to combine the UMOSFET design with its U-shape trench-gate architecture which is well-established in silicon technology and benefits from a reduction in cell pitch size as well as from the elimination of the junction-FET regi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aad40c2822eac2f51a37693ea97579c6
https://doi.org/10.1016/j.mee.2015.07.002
https://doi.org/10.1016/j.mee.2015.07.002
Publikováno v:
Microelectronic Engineering. 143:55-63
Display Omitted A review on interference lithography at EUV and soft X-ray wavelengths.Achievements of groups in the field and their tool specifications and capabilities.Description of XIL-II synchrotron beamline and the tabletop system at RWTH Aache
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23cc582f46d71796ca15653a2fe6ad23
https://doi.org/10.1016/j.mee.2015.03.047
https://doi.org/10.1016/j.mee.2015.03.047
Publikováno v:
Nanoscale. 7:4031-4037
All nanofabrication methods come with an intrinsic resolution limit, set by their governing physical principles and instrumentation. In the case of extreme ultraviolet (EUV) lithography at 13.5 nm wavelength, this limit is set by light diffraction an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c9f07f7158e0f26e3f0f569606c9300
https://doi.org/10.1039/c4nr07420c
https://doi.org/10.1039/c4nr07420c
Autor:
Judith Woerle, Veronique Soulière, Hans Sigg, Massimo Camarda, Ulrike Grossner, Gabriel Ferro, Jens Gobrecht
Publikováno v:
Materials Science Forum, 897
In this study, we compare the electrical properties of MOS capacitors fabricated on different surface morphologies. Comparing a standard, low-roughness (
Materials Science Forum, 897
ISSN:0255-5476
ISSN:1662-9752
Materials Science Forum, 897
ISSN:0255-5476
ISSN:1662-9752
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bbdee52154e03b10467c8995832e1c8e
https://hdl.handle.net/20.500.11850/225540
https://hdl.handle.net/20.500.11850/225540