Zobrazeno 1 - 10
of 207
pro vyhledávání: '"Jens, Paul"'
Autor:
Hänig, Jens-Paul, Genz, Kerstin
Publikováno v:
JOT: Journal für Oberflächentechnik; 2024 Suppl 4, Vol. 64, p24-26, 3p
Autor:
S. Schlipf, Ehrenfried Zschech, André Clausner, Jens Paul, Laura Wambera, Karsten Meier, Simone Capecchi
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 21:9-16
The strain impact on integrated circuit performance is investigated by applying a novel indentation technique. The approach aims to investigate stress caused by CPI, particularly highly localized stress/strain with respect to the actual device geomet
Autor:
Jae Kyu Cho, Simone Capecchi, Frank Kuechenmeister, Christian Klewer, Jens Paul, Bjoern Boehme, Michael Thiele, Dirk Breuer
Publikováno v:
International Symposium on Microelectronics. 2019:000169-000175
This article describes the methodology used to derive the 22FDX® Fully-Depleted Silicon-On-Insulator (FDSOI) Chip Package Interaction (CPI) qualification envelope. In the first part it is discussed how the individual market segments influence the te
Autor:
Ehrenfried Zschech, Juliane Posseckardt, Jendrik Silomon, Jürgen Gluch, Dirk Breuer, André Clausner, Jens Paul
Publikováno v:
2021 IEEE International Interconnect Technology Conference (IITC).
In previous works, the resulting damages in the back end of line (BEoL) stack triggered by Copper pillar (Cu-pillar) shear-off events were evaluated and classified [1]. It was determined, especially by utilizing acoustic emission (AE) measurements, t
Autor:
Laura Wambera, Ehrenfried Zschech, Karsten Meier, André Clausner, Jens Paul, Simone Capecchi, S. Schlipf, C. Sander
Publikováno v:
2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).
The stress related shifts of transistors are measured by precise stress application with a newly designed in-situ four-point bending (4PB) system. A test board including a flip chip packaged test vehicle is loaded with uniaxial stress. The test vehic
A novel approach is presented to evaluate the mechanical stability of back end of line (BEoL) stacks. A SRAM test vehicle manufactured in 28 nm technology with copper pillar bumps is used. In a second step, the validity of the approach is also shown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba7522af533cd0c6def2f32be4aba11c
https://publica.fraunhofer.de/handle/publica/267541
https://publica.fraunhofer.de/handle/publica/267541
Autor:
S. Schlipf, Ehrenfried Zschech, Karsten Meier, Laura Wambera, Simone Capecchi, André Clausner, Jens Paul
The stress-related change in the characteristics of transistors manufactured in the 22 nm fully depleted silicon on insulator (FDSOI) CMOS technology node is studied with advanced experimental indentation setups. Precisely, NAND and NOR ring oscillat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0336c0a8546dcc445ba70b1f1c13644c
https://publica.fraunhofer.de/handle/publica/266391
https://publica.fraunhofer.de/handle/publica/266391
Autor:
Karsten Meier, Christian Goetze, Marcel Wieland, Simone Capecchi, Jens Paul, Karlheinz Bock, Laura Wambera, Bjoern Boehme
Publikováno v:
2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC).
Autonomous driving and car to car or car to infrastructure communication applications are pursuing and demand for a detailed understanding of the reliability of electronics. This work focuses on reliability analysis of flip-chip chip scale packages (
Publikováno v:
2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
A novel approach is presented to evaluate the mechanical stability of back end of line (BEoL) stacks. A SRAM test vehicle manufactured in 28 nm technology with copper pillar bumps is used. To inflict damage to the BEoL of the given semiconductor devi