Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Jenq-Shinn Wu"'
Publikováno v:
AIP Advances, Vol 9, Iss 10, Pp 105001-105001-5 (2019)
We demonstrate nano- to atomic-scale epitaxial aluminum film growth on Si(111) substrate by molecular beam epitaxy. Excellent quality of these aluminum films, including sub-nanometer surface roughness, narrow linewidth of X-ray diffraction peak, clea
Externí odkaz:
https://doaj.org/article/cdaf90b426434d4e96efb903ccd1f582
Publikováno v:
AIP Advances, Vol 8, Iss 9, Pp 095029-095029-6 (2018)
Heterogeneous epitaxial growth between semiconductors and metals boosts novel device development and enables various applications. In this work, we have investigated the epitaxial growth of GaAs layers on top of a nanoscale aluminium-transformed AlAs
Externí odkaz:
https://doaj.org/article/a2ab8f2ad5304c3ab3b82a748a4392cd
Autor:
Yen-Ting Fan, Ming-Cheng Lo, Chu-Chun Wu, Peng-Yu Chen, Jenq-Shinn Wu, Chi-Te Liang, Sheng-Di Lin
Publikováno v:
AIP Advances, Vol 7, Iss 7, Pp 075213-075213-6 (2017)
Atomic-scale metal films exhibit intriguing size-dependent film stability, electrical conductivity, superconductivity, and chemical reactivity. With advancing methods for preparing ultra-thin and atomically smooth metal films, clear evidences of the
Externí odkaz:
https://doaj.org/article/11011cc28960404f86e82c1388aef4a6
Publikováno v:
Crystals, Vol 9, Iss 3, p 170 (2019)
GaAs p-i-n solar cells are studied using electroreflectance (ER) spectroscopy, light beam induced current (LBIC) mapping and photovoltaic characterization. Using ER measurements, the electric field across the pn junction of a wafer can be evaluated,
Externí odkaz:
https://doaj.org/article/93691ebe6b7f4403b491c020fdae2ca0
Autor:
Yu-Yao Gao, Jenq-Shinn Wu, Cheng-Cheng Liu, Kuan-Jung Su, Pei-Tzu Wu, Shun-Tsung Lo, Chu-Chun Wu, Thi Hien Do, Sheng-Di Lin
Publikováno v:
2022 IEEE 22nd International Conference on Nanotechnology (NANO).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a26a84fed8f5abce7157271557388231
https://doi.org/10.1109/nano54668.2022.9928656
https://doi.org/10.1109/nano54668.2022.9928656
Publikováno v:
2022 Compound Semiconductor Week (CSW).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20d22bebdd66f825284da100643fde00
https://doi.org/10.1109/csw55288.2022.9930435
https://doi.org/10.1109/csw55288.2022.9930435
Autor:
Yung-Chung Pan, Cheng-Kuo Lin, Jing-Chang Wu, Wen-Kai Wang, Jenq-Shinn Wu, Yi-Jen Chan, Jiun-Tsuen Lai, Chung-Chih Tsai
Publikováno v:
IEEE Transactions on Electron Devices. 51:1214-1217
We have developed the 1-/spl mu/m gate-length devices of In/sub 0.65/Ga/sub 0.65/As pseudomorphic channel (PC) on the In/sub 0.5/Al/sub 0.5/As metamorphic buffer layer to improve the device performance, as compared with the In/sub 0.5/Ga/sub 0.5/As l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1a19a5a873f1d7a72be3b0535a4b35b
https://doi.org/10.1109/ted.2004.829858
https://doi.org/10.1109/ted.2004.829858
Publikováno v:
Applied Physics Letters; 4/25/2016, Vol. 108 Issue 17, p172403-1-172403-4, 4p, 2 Color Photographs, 2 Graphs
Publikováno v:
Japanese Journal of Applied Physics; Apr2020, Vol. 59 Issue SG, p1-1, 1p
Autor:
Yun-Guang Li, Der-Yuh Lin, Tsung-Shine Ko, Jenq-Shinn Wu, Chih-Hung Wu, Yu-Li Tsai, Ming-Cheng Kao, Hong-Zen Chen
Publikováno v:
Japanese Journal of Applied Physics; Apr2015, Vol. 54 Issue 4S, p1-1, 1p