Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Jenny Tempeler"'
Publikováno v:
Polymers, Vol 16, Iss 13, p 1943 (2024)
The microphase separation of high-molecular-weight block copolymers into nanostructured films is strongly dependent on the surface fields. Both, the chain mobility and the effective interaction parameters can lead to deviations from the bulk morpholo
Externí odkaz:
https://doaj.org/article/63fc635307d14681847e64853cb514af
Autor:
Roman Alexander Koerner, Sven Bader, Markus Herper, Tobias Kischkat-Grimm, Jenny Tempeler, Alexander van der Lee, Holger Moench, Armand Pruijmboom, Manuel Aviles Rodriguez, Ulrich Weichmann, Alexander Weigl
Publikováno v:
Vertical-Cavity Surface-Emitting Lasers XXVII.
Publikováno v:
Nanotechnology. 29(27)
In this study we analyze the impact of process and growth parameters on the structural properties of germanium (Ge) quantum dot (QD) arrays. The arrays were deposited by molecular-beam epitaxy on pre-patterned silicon (Si) substrates. Periodic arrays
Publikováno v:
Applied Physics A. 121:513-519
Two-photon-induced lithography is a versatile method to generate arbitrary three-dimensional microstructures. Although the lithographic result sensitively depends on the experimental conditions, there is a lack of in situ methods to measure process c
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII.
In this work we present the capabilities of the designed and realized extreme ultraviolet laboratory exposure tool (EUVLET) which has been developed at the RWTH-Aachen, Chair for the Technology of Optical Systems (TOS), in cooperation with the Fraunh
Autor:
Stefan Herbert, Oskar Hofmann, Larissa Juschkin, Lukas Bahrenberg, Jenny Tempeler, Rainer Lebert, Aleksey Maryasov, Serhiy Danylyuk, Peter Loosen
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VI
The authors report on experimental and simulative scattering analyses of phase and amplitude defects found in extreme ultraviolet multilayer mirrors, such as mask blanks for EUV lithography. The goal of the analyses is to develop a novel mask blank i
Two photon lithography allows the fabrication of arbitrary 3D structures with possible applications as micromechanical and microelectromechanical systems, photonic devices, 3D cell culture systems and scaffolds for tissue engineering. In order to ach
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::08daa0b6b1a34a329ef7fedd0c19a9d4
https://publica.fraunhofer.de/handle/publica/234502
https://publica.fraunhofer.de/handle/publica/234502
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 15:043502
The main purpose of this work is the experimental determination of the process window for achromatic Talbot lithography with partially coherent extreme ultraviolet (EUV) radiation. This work has been performed using the EUV laboratory exposure tool.