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pro vyhledávání: '"Jenny M. Metz"'
Publikováno v:
City University of Hong Kong
Microelectronic devices fabricated in silicon epitaxial layers on heavily doped substrates are less prone to latch-up and alpha-particle-induced soft errors. Unfortunately, trace amounts of boron in N + antimony-doped silicon substrates can cause del
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::85bfcb6e2fb99c811185c58d460cb3c5
https://scholars.cityu.edu.hk/en/publications/determination-of-subparts-per-billion-boron-contamination-in-n-czochralski-silicon-substrates-by-sims(b32f52ff-fa29-4af8-b5c7-2e8eca95e19c).html
https://scholars.cityu.edu.hk/en/publications/determination-of-subparts-per-billion-boron-contamination-in-n-czochralski-silicon-substrates-by-sims(b32f52ff-fa29-4af8-b5c7-2e8eca95e19c).html