Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Jennifer P. Teixeira"'
Autor:
António J. N. Oliveira, Jennifer P. Teixeira, Duarte Ramos, Paulo A. Fernandes, Pedro M. P. Salomé
Publikováno v:
Advanced Photonics Research, Vol 3, Iss 6, Pp n/a-n/a (2022)
Light management strategies are of utmost importance to allow Cu(In,Ga)Se2 (CIGS) technology market expansion, as it would enable a conversion efficiency boost as well as thinner absorber layers, increasing sustainability and reducing production cost
Externí odkaz:
https://doaj.org/article/e8d8c79df2ec4032a8eba39731005742
Autor:
Henrique Limborço, Pedro M.P. Salomé, Rodrigo Ribeiro-Andrade, Jennifer P. Teixeira, Nicoleta Nicoara, Kamal Abderrafi, Joaquim P. Leitão, Juan C. Gonzalez, Sascha Sadewasser
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 10, Iss 1, Pp 1103-1111 (2019)
The currently most efficient polycrystalline solar cells are based on the Cu(In,Ga)Se2 compound as a light absorption layer. However, in view of new concepts of nanostructured solar cells, CuInSe2 nanostructures are of high interest. In this work, we
Externí odkaz:
https://doaj.org/article/fee54ed24144489db551bbfe1f141bd8
Autor:
Perumal Kannappan, Nabiha Ben Sedrine, Jennifer P. Teixeira, Maria R. Soares, Bruno P. Falcão, Maria R. Correia, Nestor Cifuentes, Emilson R. Viana, Marcus V. B. Moreira, Geraldo M. Ribeiro, Alfredo G. de Oliveira, Juan C. González, Joaquim P. Leitão
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 8, Iss 1, Pp 2126-2138 (2017)
Mg doping of GaAs nanowires has been established as a viable alternative to Be doping in order to achieve p-type electrical conductivity. Although reports on the optical properties are available, few reports exist about the physical properties of int
Externí odkaz:
https://doaj.org/article/1a6af22202794e69836407f998d12f62
Autor:
Daniel Rocha, Joao Alves, Vitor Lopes, Jennifer P. Teixeira, Paulo A. Fernandes, Mauro Costa, Modesto Morais, Pedro M. P. Salome
Publikováno v:
IEEE Journal of Photovoltaics. 13:291-295
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa4a8e4d43819406f62213687396bb47
https://doi.org/10.1109/jphotov.2023.3236188
https://doi.org/10.1109/jphotov.2023.3236188
SiOx Patterned Based Substrates Implemented in Cu(In,Ga)Se2 Ultrathin Solar Cells: Optimum Thickness
Autor:
Kevin Oliveira, Jennifer P. Teixeira, Wei-Chao Chen, Jackson Lontchi Jioleo, Antonio J. N. Oliveira, Ihsan Caha, Leonard Deepak Francis, Denis Flandre, Marika Edoff, Paulo A. Fernandes, Pedro M. P. Salome
Publikováno v:
IEEE Journal of Photovoltaics. 12:954-961
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd65e954fe0e243424893d62f28b0ba3
https://doi.org/10.1109/jphotov.2022.3165764
https://doi.org/10.1109/jphotov.2022.3165764
Autor:
Jennifer P. Teixeira, Hartmut Wiggers, Alexandre M. P. Botas, Rute A. S. Ferreira, Bruno P. Falcão, Joaquim P. Leitão, Rui N. Pereira, Felix Eckmann, Martin Stutzmann, Markus Wiesinger
Publikováno v:
ACS Applied Nano Materials. 3:5033-5044
Solution-processed thin films of crystalline silicon nanoparticles (Si NPs) have a great potential for a wide variety of electronic and optoelectronic applications. However, such films are inherent...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f51688bc825814b572de74e84a33583
https://doi.org/10.1021/acsanm.0c00116
https://doi.org/10.1021/acsanm.0c00116
Autor:
Helena V. Alberto, Rui C. Vilão, Eduardo F. M. Ribeiro, João M. Gil, Marco A. Curado, Jennifer P. Teixeira, Paulo A. Fernandes, José M. V. Cunha, Pedro M. P. Salomé, Marika Edoff, Maria I. Martins, Thomas Prokscha, Zaher Salman, Alois Weidinger
As devices become smaller and more complex, the interfaces between adjacent materials become increasingly important and are often critical to device performance. An important research goal is to improve the interface between the absorber and the wind
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f00e865b1a4d0d0111debeff2cd1837
https://hdl.handle.net/10400.22/21845
https://hdl.handle.net/10400.22/21845
Autor:
André F. Violas, António J.N. Oliveira, Jennifer P. Teixeira, Tomás S. Lopes, João R.S. Barbosa, Paulo A. Fernandes, Pedro M.P. Salomé
Cu(In,Ga)Se2 (CIGS) solar cells are amongst the best performing thin-film technologies, with the latest performance gains being mainly due to recent years improvements obtained with post-deposition treatments (PDT). Moreover, thinning of the absorber
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3bfc6623193eb51f19ff71e9cc25c835
https://hdl.handle.net/10400.22/21905
https://hdl.handle.net/10400.22/21905
Autor:
Tomás S, Lopes, Jessica, de Wild, Célia, Rocha, André, Violas, José M V, Cunha, Jennifer P, Teixeira, Marco A, Curado, António J N, Oliveira, Jérôme, Borme, Gizem, Birant, Guy, Brammertz, Paulo A, Fernandes, Bart, Vermang, Pedro M P, Salomé
Publikováno v:
ACS applied materialsinterfaces. 13(23)
Several optoelectronic issues, such as poor optical absorption and recombination, limit the power conversion efficiency of ultrathin Cu(In,Ga)Se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::e7c71644661d0e2ff7504b51b61675b5
https://pubmed.ncbi.nlm.nih.gov/34086435
https://pubmed.ncbi.nlm.nih.gov/34086435
Autor:
Joao Gaspar, Jennifer P. Teixeira, Marika Edoff, José M. V. Cunha, Nina Shariati Nilsson, Sourav Bose, Wei-Chao Chen, Paulo Fernandes, Joaquim P. Leitão, Pedro M. P. Salomé, Jérôme Borme
Publikováno v:
Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
Thin Solid Films
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
Thin Solid Films
The effects of introducing a passivation layer at the rear of ultrathin Copper Indium Gallium di-Selenide Cu(In,Ga)Se2 (CIGS) solar cells is studied. Point contact structures have been created on 25 nm Al2O3 layer using e-beam lithography. Reference
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f9c63b81b1c27a1ed113451ea36c7c27
https://doi.org/10.1016/j.tsf.2018.12.028
https://doi.org/10.1016/j.tsf.2018.12.028