Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Jennifer J. Zinck"'
Autor:
Jennifer J. Zinck, W. Barvosa-Carter, Christian Ratsch, J. H. G. Owen, Frank Grosse, Richard S. Ross
Publikováno v:
Surface Science. 499:L129-L134
The structure of InAs(0 0 1)-(2×4) surfaces equilibrated under typical MBE conditions is studied by scanning tunneling microscopy (STM). Depending on the magnitude of the As flux, typical surfaces are found to contain a mixture of α2(2×4) and β2(
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1f6590fad86c86a38c56a7291011227
https://doi.org/10.1016/s0039-6028(01)01638-7
https://doi.org/10.1016/s0039-6028(01)01638-7
Publikováno v:
Physical Review B. 62:R7719-R7722
The stability of different surface reconstructions on InAs~001! is investigated theoretically and experimentally. Density-functional theory calculations predict four different surface reconstructions to be stable at different chemical potentials. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e24c813ac28f9efc23cba27c7b11c6ca
https://doi.org/10.1103/physrevb.62.r7719
https://doi.org/10.1103/physrevb.62.r7719
Autor:
Stanley Osher, Mark F. Gyure, Russel E. Caflisch, Jennifer J. Zinck, Barry Merriman, Dimitri D. Vvedensky, Christian Ratsch
Publikováno v:
Applied Mathematics Letters. 12:13-22
We adapt the level set method to simulate the growth of thin films described by the motion of island boundaries. This island dynamics model involves a continuum in the lateral directions, but retains atomic scale discreteness in the growth direction.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cfe6f39600e0a3ea610c638badefa7d5
https://doi.org/10.1016/s0893-9659(99)00026-9
https://doi.org/10.1016/s0893-9659(99)00026-9
Autor:
Russel E. Caflisch, Barry Merriman, Mark F. Gyure, D. D. Vvedensky, Stanley Osher, Christian Ratsch, Jennifer J. Zinck
Publikováno v:
Physical Review E. 58:R6927-R6930
We introduce a model for epitaxial phenomena based on the motion of island boundaries, which is described by the level-set method. Our model treats the growing film as a continuum in the lateral direction, but retains atomistic discreteness in the gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4476b458d1453ced5f49317f3fdc09aa
https://doi.org/10.1103/physreve.58.r6927
https://doi.org/10.1103/physreve.58.r6927
Publikováno v:
Physical Review Letters. 81:4931-4934
We present experimental data for the morphological evolution of InAs buffer layers which are interpreted using continuum equations of motion and kinetic Monte Carlo simulations. Our analysis reveals the presence of an instability even as an initially
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a17dbd27caac44a10930a5475544a2b3
https://doi.org/10.1103/physrevlett.81.4931
https://doi.org/10.1103/physrevlett.81.4931
Autor:
Jennifer J. Zinck, A. Hunter, A. N. Kocbay, T. F. Boggess, J. Hicks, Kimberley C. Hall, Kenan Gundogdu, K. Holabird
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 34:371-373
Manipulation of electron spin is a critical component of many proposed semiconductor spintronic devices. One promising approach utilizes the Rashba effect by which an applied electric field can be used to reduce the spin lifetime or rotate spin orien
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e386ce7097114ae39a9c0ad2bde968e2
https://doi.org/10.1016/j.physe.2006.03.094
https://doi.org/10.1016/j.physe.2006.03.094
Autor:
Jennifer J. Zinck, David H. Chow
Publikováno v:
Journal of Crystal Growth. :323-327
Photoemission oscillations (PEO) are measured during the growth of InAs/AlSb/GaSb resonant tunneling diodes on (0 0 1) GaAs and (0 0 1) InAs substrates. PEO of the GaSb well are unresolved for growth on GaAs substrates but clearly observable for grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b92cc71a028d3fb070ea9348bc801c18
https://doi.org/10.1016/s0022-0248(96)01043-3
https://doi.org/10.1016/s0022-0248(96)01043-3
Publikováno v:
Journal of Crystal Growth. 138:19-27
Thermally pre-cracked diethylzinc and diethylselenide were used for the metalorganic molecular beam epitaxial growth of (001) ZnSe films on (001) GaAs substrates. The growth kinetics of (001) ZnSe was studied by measuring the growth rate as a functio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47ec6d594865d26c7ebcf3cceb84f01c
https://doi.org/10.1016/0022-0248(94)90774-9
https://doi.org/10.1016/0022-0248(94)90774-9
Publikováno v:
Journal of Crystal Growth. 129:111-118
In this paper “laminar-flow” and “plug-flow” models are presented for engineering photo-assisted chemical vapor deposition reactors. It is shown that the growth rate depends directly on the photodissociation rate, which in turn is proportiona
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acf81241312e911b05a994fa8db9cfa7
https://doi.org/10.1016/0022-0248(93)90440-8
https://doi.org/10.1016/0022-0248(93)90440-8
Publikováno v:
Journal of Crystal Growth. 123:500-518
A reaction mechanism is presented for photo-assisted organometallic vapor-phase epitaxy (OMVPE) of cadmium telluride. Dimethylcadmium and dimethyltellurium are photodissociated in the gas into Cd and Te atoms and methyl radicals by 248 nm photons fro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cc29ccb42ea414a6df876d6e12ceb19
https://doi.org/10.1016/0022-0248(92)90612-m
https://doi.org/10.1016/0022-0248(92)90612-m