Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Jennifer Emara"'
Autor:
Sukhrob Abdulazhanov, Quang Huy Le, Dang Khoa Huynh, Defu Wang, Maximilian Lederer, Ricardo Olivo, Konstantin Mertens, Jennifer Emara, Thomas Kämpfe, Gerald Gerlach
Publikováno v:
Crystals, Vol 11, Iss 8, p 980 (2021)
A microwave characterization at UHF band of a ferroelectric hafnium zirconium oxide metal-ferroelectric-metal (MFM) capacitors for varactor applications has been performed. By using an impedance reflectivity method, a complex dielectric permittivity
Externí odkaz:
https://doaj.org/article/401a81cc17c140428dacfc7d8e9508ac
Autor:
Tarek Ali, David Lehninger, Maximilian Lederer, Songrui Li, Kati Kühnel, Clemens Mart, Konstantin Mertens, Raik Hoffmann, Ricardo Olivo, Jennifer Emara, Kati Biedermann, Joachim Metzger, Robert Binder, Malte Czernohorsky, Thomas Kämpfe, Johannes Müller, Konrad Seidel, Lukas M. Eng
The properties of hybrid ferroelectric (FE) and antiFE (AFE) films integrated in a single capacitor stack is reported. The stack lamination (4 × 5 nm) or (2 × 10 nm) using an Alumina (Al2O3) interlayer, material type (Si-doped HfO2 (HSO) and Zr dop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5254b0ebe89530fb0022edebeece4c91
https://publica.fraunhofer.de/handle/publica/416453
https://publica.fraunhofer.de/handle/publica/416453
Publikováno v:
Thin Solid Films. 768:139694
Autor:
Maximilian Lederer, Konstantin Mertens, Gerald Gerlach, Sukhrob Abdulazhanov, Ricardo Olivo, Jennifer Emara, Dang Khoa Huynh, Defu Wang, Thomas Kampfe, Quang Huy Le
Publikováno v:
Crystals
Volume 11
Issue 8
Crystals, Vol 11, Iss 980, p 980 (2021)
Volume 11
Issue 8
Crystals, Vol 11, Iss 980, p 980 (2021)
A microwave characterization at UHF band of a ferroelectric hafnium zirconium oxide metal-ferroelectric-metal (MFM) capacitors for varactor applications has been performed. By using an impedance reflectivity method, a complex dielectric permittivity
Autor:
Konstantin Mertens, Konrad Seidel, Maximilian Lederer, Alireza M. Kia, Tarek Ali, Yannick Raffel, David Lehninger, Lukas M. Eng, Kati Kühnel, Jennifer Emara, Ricardo Olivo, Thomas Kampfe
Abstract Reliability is a central aspect of hafnium oxide-based ferroelectric field effect transistors (FeFETs), which are promising candidates for embedded non-volatile memories. Besides the device performance, understanding the evolution of the fer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::996553773765158fb89db1179aa9e7ef
https://publica.fraunhofer.de/handle/publica/270606
https://publica.fraunhofer.de/handle/publica/270606
Autor:
Maximilian Lederer, Jennifer Emara, Ricardo Olivo, Thomas Kampfe, Sukhrob Abdulazhanov, Tarek Ali, David Lehninger
Abstract In this article, we investigate the capacitance–voltage (C–V) characteristics of $$\text {Hf}_{x}\text {Zr}_{1-x}\text {O}_{2}$$ Hf x Zr 1 - x O 2 metal-ferroelectric-metal (MFM) thin-film capacitors with various Zr doping for varactor a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a81fdaebc5f41768160e34899f85fe21
https://publica.fraunhofer.de/handle/publica/270561
https://publica.fraunhofer.de/handle/publica/270561
Autor:
Sukhrob Abdulazhanov, Tarek Ali, Defu Wang, David Lehninger, C. Mart, Jennifer Emara, Ricardo Olivo, Thomas Kampfe, Maximilian Lederer, Gerald Gerlach
In this article, we present the capacitance–voltage ( ${C}$ – ${V}$ ) characteristics of Hf x Zr1− x O2 metal–ferroelectric–metal (MFM) thin-film capacitors with various Zr doping, thicknesses, and annealing temperatures. The influence of d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::47c9968e71b25606be6e56a51ff7c9a7
https://publica.fraunhofer.de/handle/publica/270353
https://publica.fraunhofer.de/handle/publica/270353
Autor:
Caroline Schwinge, Kati Kühnel, Jennifer Emara, Lisa Roy, Kati Biedermann, Wenke Weinreich, Sabine Kolodinski, Maciej Wiatr, Gerald Gerlach, Maik Wagner-Reetz
Publikováno v:
Applied Physics Letters. 120:031903
The incessant downscaling of building blocks for memory and logic in computer chips requires energy-efficient devices. Thermoelectric-based temperature sensing, cooling as well as energy harvesting could be useful methods to reach reliable device per
Autor:
Alireza M. Kia, Kati Kühnel, Wenke Weinreich, Nora Haufe, Jennifer Emara, Jan Speulmanns, Sascha Bönhardt
Publikováno v:
Applied Surface Science. 564:150457
On-chip integration of solid-state thin-film lithium-ion batteries (LIBs) can be a feasible solution for integrating energy storage devices directly into microchips. Constituting an energy source in such devices requires an implementation of the batt
Publikováno v:
Advanced Materials. 28:553-559
The electronic structure of a large sample set of CH3 NH3 PbI3 -based perovskites is studied. Combined investigations by UV/X-ray photoelectron spectroscopy and X-ray diffraction reveal that interstitials present in the film lead to changes in the oc