Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Jennifer D. Schuler"'
Autor:
Lin Li, Timothy J. Rupert, Jennifer D. Schuler, David Tweddle, Charlette M. Grigorian, Xuyang Zhou, Gregory B. Thompson
Publikováno v:
Journal of Materials Science. 55:16758-16779
Ascertaining the mechanism(s) of nanocrystalline stability is a critical need in revealing how specific alloys retard grain growth. Often significant debate exists concerning such mechanisms, even in the same alloy. Here, we compare two processing me
Autor:
Brad L. Boyce, Christopher M. Barr, Khalid Hattar, Jennifer D. Schuler, Timothy J. Rupert, Charlette M. Grigorian
Publikováno v:
Acta Materialia. 186:341-354
Nanocrystalline metals are promising radiation tolerant materials due to their large interfacial volume fraction, but irradiation-induced grain growth can eventually degrade any improvement in radiation tolerance. Therefore, methods to limit grain gr
Autor:
Guild Copeland, Brad L. Boyce, Christopher M. Barr, Timothy J. Rupert, Khalid Hattar, Jennifer D. Schuler, Nathan M. Heckman
Publikováno v:
JOM. 71:1221-1232
Nanocrystalline metals typically have high fatigue strengths but low resistance to crack propagation. Amorphous intergranular films are disordered grain boundary complexions that have been shown to delay crack nucleation and slow crack propagation du
Publikováno v:
Scripta Materialia. 154:49-53
Solute segregation is used to limit grain growth in nanocrystalline metals, but this stabilization often breaks down at high temperatures. Amorphous intergranular films can form in certain alloys at sufficiently high temperatures, providing a possibl
Autor:
Jennifer D. Schuler, Timothy J. Rupert
Publikováno v:
Acta Materialia. 140:196-205
Complexions are phase-like interfacial features that can influence a wide variety of properties, but the ability to predict which material systems can sustain these features remains limited. Amorphous complexions are of particular interest due to the
Autor:
Simon C. Pun, Timothy J. Rupert, Amirhossein Khalajhedayati, Jennifer D. Schuler, Jason R. Trelewicz, Wenbo Wang
Publikováno v:
Materials Science and Engineering: A. 696:400-406
Nanocrystalline Al-Mg alloys are used to isolate the effect of grain boundary doping on the strength of nanostructured metals. Mg is added during mechanical milling, followed by low homologous temperature annealing treatments to induce segregation wi
Comparison of Solute Partitioning between Nanocrystalline Sputtered Thin Films and Ball Milled Cu-Zr
Autor:
David Tweddle, Xuyang Zhou, Gregory B. Thompson, Jennifer D. Schuler, Lin Li, Charlette M. Grigorian, Timothy J. Rupert
Publikováno v:
SSRN Electronic Journal.
Ascertaining the mechanism(s) of nanocrystalline stability is a critical need in revealing how specific alloys retard grain growth. Often significant debate exists concerning such mechanisms, even in the same alloy. Here, we compared two processing m
Publikováno v:
Materialia. 9:100618
Practical applications of nanocrystalline metallic thin films are often limited by instabilities. In addition to grain growth, the thin film itself can become unstable and collapse into islands through solid-state dewetting. Selective alloying can im
Autor:
Khalid Hattar, Angela L. Paoletta, Anthony M. Monterrosa, Timothy J. Rupert, Zahabul Islam, Jennifer D. Schuler, Nicholas R. Glavin, Aman Haque
Publikováno v:
Microelectronics Reliability. 102:113493
We investigate the effects of ion irradiation on AlGaN/GaN high electron mobility electron transistors using in-situ transmission electron microscopy. The experiments are performed inside the microscope to visualize the defects, microstructure and in
Chemical segregation and structural transitions at interfaces are important nanoscale phenomena, making them natural targets for atomistic modeling, yet interatomic potentials must be fit to secondary physical properties. To isolate the important fac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a90c87a514a4cd49d8e42a1bcea7765
http://arxiv.org/abs/1711.02693
http://arxiv.org/abs/1711.02693