Zobrazeno 1 - 10
of 127
pro vyhledávání: '"Jennifer A. Bardwell"'
Publikováno v:
Modifications of Passive Films ISBN: 9781003422037
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9960e988a4d7abe866a9b4d3f8571424
https://doi.org/10.1201/9781003422037-10
https://doi.org/10.1201/9781003422037-10
In this paper, we report the fabrication of a normally-off AlGaN/GaN high electron mobility transistor (HEMT) using an ultra-thin AlGaN barrier layer structure on Si (111) substrate. Additional AlGaN layers were selectively regrown only on the ohmic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c9c61c8a1506070c43133bce0a99b80b
https://doi.org/10.1088/1361-6641/abecab
https://doi.org/10.1088/1361-6641/abecab
Publikováno v:
2018 18th International Symposium on Antenna Technology and Applied Electromagnetics (ANTEM).
This paper proposes a new multi-bias correlated parameter extraction method for microwave transistor modeling. The initial small-signal equivalent circuit element values are extracted using an analytical method. Optimum element values are obtained us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e92e0d66c4fcdb3c77df708cbe555fde
https://doi.org/10.1109/antem.2018.8572900
https://doi.org/10.1109/antem.2018.8572900
Publikováno v:
Journal of Crystal Growth. 323:413-417
This paper investigates the effect of buried cracks in the AlN interlayer buffer on mitigation of the large, tensile, thermal expansion mismatch strain in the GaN/Si system, which is a key hurdle for achieving crack free GaN epitaxy on silicon. The t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1891f25ef511631c99fa480347c0c777
https://doi.org/10.1016/j.jcrysgro.2010.11.063
https://doi.org/10.1016/j.jcrysgro.2010.11.063
Windowed growth of AlGaN/GaN heterostructures on Silicon 〈111〉 substrates for future MOS integration
Autor:
N. Baron, P. Chyurlia, Jennifer A. Bardwell, Fabrice Semond, T. Lester, J. C. Moreno, S. Rolfe, N. G. Tarr, Yvon Cordier
Publikováno v:
physica status solidi (a). 206:371-374
A novel windowed growth technique that allows for the exposure of a smooth silicon surface for MOS circuitry between AlGaN/GaN HEMT layers has been developed. A sacrificial oxide based dielectric stack is used to protect regions of the silicon surfac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a11bd0fe489d42e0ace4b1aabf7cbbf
https://doi.org/10.1002/pssa.200824452
https://doi.org/10.1002/pssa.200824452
Autor:
Jennifer A. Bardwell, Haipeng Tang, Soufien Haffouz, A.F. Braña, Fernando González-Posada, S. Moisa, Elías Muñoz
Publikováno v:
Applied Surface Science. 253:6185-6190
The chemical composition of the AlGaN/GaN surface during typical process steps in transistor fabrication was studied using X-ray photoelectron spectroscopy (XPS). The steps studied included organic solvent cleaning, 1:1 HCl:H 2 O dip, buffered oxide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8835b1fcd78b9d7b9046a01074d058c7
https://doi.org/10.1016/j.apsusc.2007.01.016
https://doi.org/10.1016/j.apsusc.2007.01.016
Autor:
S. H. Knox, Jennifer A. Bardwell, N. G. Tarr, Pietro N. A. Chyurlia, Soufien Haffouz, J. W. M. Rogers, Haipeng Tang
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 24:629-633
A simple equivalent circuit model including noise sources for the GaN heterostructure field effect transistor is presented and analyzed. The model is used to determine optimum source impedance for low noise amplifier applications. A good agreement be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e1c5cef665e3f978fc1361755752973
https://doi.org/10.1116/1.2186659
https://doi.org/10.1116/1.2186659
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 24:686-689
Time correlated single photon electroluminescence maps have been recorded on operating semiconductor devices with a spatial resolution approaching 1μm and a time resolution of 50 ps. The technique is noninvasive and observes signal wave forms optica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09596c6a68fab08a91abe59751cd7832
https://doi.org/10.1116/1.2172931
https://doi.org/10.1116/1.2172931
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 24:624-628
Self-heating is an important issue for GaN heterostructure field effect transistors (HFETs), especially in high power applications. Here we report the temperature dependence of the dc characteristics of some GaN HFETs including the variation of the t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::491d5c2f6f3c8fc323682858c9c4aa31
https://doi.org/10.1116/1.2172921
https://doi.org/10.1116/1.2172921
Autor:
Nelson Rowell, J.-M. Baribeau, Li-Lin Tay, Jennifer A. Bardwell, D. J. Lockwood, R. Boukherroub
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 24:668-672
A single-reflection attenuated total reflection (ATR) technique has been used to study low index monolayers with a high index ATR hemisphere in an optical contact with the sample surface. A model calculation predicts a field enhancement with the pres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3374404db2b18fbde8c7f3da91304768
https://doi.org/10.1116/1.2180270
https://doi.org/10.1116/1.2180270