Zobrazeno 1 - 10
of 135
pro vyhledávání: '"Jenn-Hwan Tarng"'
Publikováno v:
IEEE Access, Vol 10, Pp 89091-89100 (2022)
A low-profile, wideband antenna-in-package (AiP) design is proposed for 5G mmWave mobile applications. The aperture-coupled feeding incorporated with the microstrip feed line through the slots in the ground is used to excite the patch antenna. Firstl
Externí odkaz:
https://doaj.org/article/7383b83b21084640a59f90545f2d2230
Publikováno v:
IEEE Open Journal of Antennas and Propagation, Vol 2, Pp 326-334 (2021)
A Ka-band dual-polarized low profile magneto-electric (ME) dipole antenna with wide operational bandwidth is proposed in this paper. A thin substrate with two-stage meandered vias is utilized for realization of the proposed antenna. The meandered via
Externí odkaz:
https://doaj.org/article/db674ad147094a37aad930a911f33568
Autor:
Daisuke Ohori, Takuya Fujii, Shuichi Noda, Wataru Mizubayashi, Kazuhiko Endo, Yao-Jen Lee, Jenn-Hwan Tarng, Yiming Li, Seiji Samukawa
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 2, Pp 26-30 (2021)
We investigated a high electron mobility Ge FinFET fabricated by defect-free and roughness-free atomic layer neutral beam etching (NBE) compared with one fabricated by conventional plasma etching (PE). The etching interface roughness and defect were
Externí odkaz:
https://doaj.org/article/85dd0664586d42f58c58f3a223a22441
Autor:
Daisuke Ohori, Min-Hui Chuang, Asahi Sato, Sou Takeuchi, Masayuki Murata, Atsushi Yamamoto, Ming-Yi Lee, Kazuhiko Endo, Yiming Li, Jenn-Hwan Tarng, Yao-Jen Lee, Seiji Samukawa
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 2, Pp 148-152 (2021)
The phonon transport in the lateral direction for gap-controlled Si nanopillar (NP) /SiGe interlayer composite materials was investigated to eliminate heat generation in the channel area for advanced MOS transistors. The gap-controlled Si NP/SiGe com
Externí odkaz:
https://doaj.org/article/6408b68c71fe4ef7b9dd8465f556e0b3
Autor:
Daisuke Ohori, Sou Takeuchi, Masahiro Sota, Teruhisa Ishida, Yiming Li, Jenn-Hwan Tarng, Kazuhiko Endo, Seiji Samukawa
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 1, Pp 1-5 (2020)
We fabricated a highly water-repellent quartz nanopillar (NP) structure to investigate the effect of varying the contact angle (CA) by using 10-nm-order gaps and 10-nm-diameter NPs. Gaps from 15 to 30 nm led to CAs of more than 100°, showing hydroph
Externí odkaz:
https://doaj.org/article/1ebf360478e9465a8ddd64c84cfbc2e9
Publikováno v:
Applied Sciences, Vol 11, Iss 4, p 1477 (2021)
This paper presents a triple-band low-noise amplifier (LNA) fabricated using a 0.18 μm Complementary Metal-Oxide-Semiconductor (CMOS) process. The LNA uses a double-peak load network with a switched component to accomplish the triple-band operation.
Externí odkaz:
https://doaj.org/article/abec035b09fc4b72b63fc3792264a0c0
Autor:
Cheng-Hung Hsieh, Tzu-Chieh Hong, Chiung-Yi Yang, Yi-Ho Chen, Xin-Ren Yu, Wen-Hsiang Lu, Ricky W. Chuang, Zuo-Min Tsai, Yao-Jen Lee, Yiming Li, Wen-Fa Wu, Tien-Sheng Chao, Seiji Samukawa, Yeong-Her Wang, Wen-Kuan Yeh, Jenn-Hwan Tarng
Publikováno v:
IEEE Electron Device Letters. 43:1798-1801
Autor:
Shu-Wei Chang, Tsung-Han Lu, Cong-Yi Yang, Cheng-Jui Yeh, Min-Kun Huang, Ching-Fan Meng, Po-Jen Chen, Ting-Hsuan Chang, Yan-Shiuan Chang, Jhe-Wei Jhu, Tzu-Chieh Hong, Chu-Chu Ke, Xin-Ren Yu, Wen-Hsiang Lu, Mohammed Aftab Baig, Ta-Chun Cho, Po-Jung Sung, Chun-Jung Su, Fu-Kuo Hsueh, Bo-Yuan Chen, Hsin-Hui Hu, Chien-Ting Wu, Kun-Lin Lin, William Cheng-Yu Ma, Darsen D. Lu, Kuo-Hsing Kao, Yao-Jen Lee, Cheng-Li Lin, Kun-Ping Huang, Kun-Ming Chen, Yiming Li, Seiji Samukawa, Tien-Sheng Chao, Guo-Wei Huang, Wen-Fa Wu, Wen-Hsi Lee, Jiun-Yun Li, Jia-Min Shieh, Jenn-Hwan Tarng, Yeong-Her Wang, Wen-Kuan Yeh
Publikováno v:
IEEE Transactions on Electron Devices. 69:2101-2107
Publikováno v:
IEEE Transactions on Antennas and Propagation. 69:8997-9002
This paper proposes a millimeter-wave phased antenna array configuration, with 2D beam-switching functionality and scalability in terms of the array size and number of switchable beams. A wideband vertically installed planar transition (VIPT) works i
Autor:
Nai-Chen Liu, Jenn-Hwan Tarng
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 11:1088-1096
Metal curving or metal denting is usually an unwanted phenomenon in the printed circuit board (PCB) process. However, curved metal could provide some benefits to enhance performance of radio frequency components. In this article, an approach is propo