Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Jenifer R. Hajzus"'
Autor:
Michael Pedowitz, Daniel Lewis, Jennifer DeMell, Daniel J. Pennachio, Jenifer R. Hajzus, Rachael Myers-Ward, Soaram Kim, Kevin M. Daniels
Publikováno v:
Materials Today Advances, Vol 21, Iss , Pp 100467- (2024)
Nanostructured manganese oxides (MnOx) have shown incredible promise in constructing next-generation energy storage and catalytic systems. However, it has proven challenging to integrate with other low-dimensional materials due to harsh deposition co
Externí odkaz:
https://doaj.org/article/4a0b451a45104470860719eb4a75041d
Autor:
Jenifer R. Hajzus, Lisa C. Shriver-Lake, Scott N. Dean, Jeffrey S. Erickson, Daniel Zabetakis, Joel Golden, Daniel J. Pennachio, Rachael L. Myers-Ward, Scott A. Trammell
Publikováno v:
Sensors, Vol 22, Iss 14, p 5367 (2022)
The electrochemical detection of heavy metal ions is reported using an inexpensive portable in-house built potentiostat and epitaxial graphene. Monolayer, hydrogen-intercalated quasi-freestanding bilayer, and multilayer epitaxial graphene were each t
Externí odkaz:
https://doaj.org/article/a0cc1905361a44f588d82dbc19de67b1
Phonon assisted electron emission from quasi-freestanding bilayer epitaxial graphene microstructures
Autor:
Daniel Lewis, Brendan Jordan, Michael Pedowitz, Daniel J Pennachio, Jenifer R Hajzus, Rachael Myers-Ward, Kevin M Daniels
Publikováno v:
Nanotechnology. 33(37)
Electron emission from quasi-freestanding bilayer epitaxial graphene (QFEG) on a silicon carbide substrate is reported, demonstrating emission currents as high as 8.5 μA, at ∼200 °C, under 0.3 Torr vacuum. Given the significantly low turn-on temp
Autor:
Jenifer R. Hajzus, Lisa M. Porter
Publikováno v:
Journal of Vacuum Science & Technology A. 38:031005
As part of a Special Issue in Honor of 30 years of the American Vacuum Society’s Nellie Yeoh Whetten Award, this Invited Perspective discusses results and trends from the authors’ and other published research on metal contacts to β-Ga2O3, (4H an
Autor:
Jenifer R. Hajzus, Curt A. Richter, Lisa M. Porter, Adam J. Biacchi, Son T. Le, Angela R. Hight Walker
Publikováno v:
Nanoscale. 10(1)
Tin(II) monosulfide (SnS) is a layered, anisotropic material that is of interest as a two-dimensional semiconductor for opto-electronic, thermoelectric, and piezoelectric applications. In this study, the effect of work function on contact behavior wa
Autor:
Jenifer R. Hajzus, Sudarshan Narayanan, Colleen E. Treacy, Michael R. Bockstaller, Lisa M. Porter
Publikováno v:
ECS Journal of Solid State Science and Technology. 3:P363-P369
Autor:
Lisa M. Porter, Jenifer R. Hajzus
Publikováno v:
Journal of Vacuum Science & Technology A. 37:061504
Nanocrystalline tin sulfide (SnS) thin films were deposited by electron-beam evaporation at growth temperatures ranging from room temperature to 300 °C and characterized prior to and after annealing at 300 °C in high vacuum. X-ray diffraction and R