Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Jenifer Hajzus"'
Autor:
S.-H. Sheldon Tai, Donald K. Milton, Heeju Ryu, John R. Rzasa, Soaram Kim, Rachael L. Myers-Ward, Daniel J. Pennachio, Kevin M. Daniels, Michael Pedowitz, Jenifer Hajzus
Publikováno v:
Biosensors & Bioelectronics
We report the rapid detection of SARS-CoV-2 in infected patients (mid-turbinate swabs and exhaled breath aerosol samples) in concentrations as low as 60 copies/mL of the virus in seconds by electrical transduction of the SARS-CoV-2 S1 spike protein a
Autor:
Marko J. Tadjer, Fikadu Alema, Andrei Osinsky, Michael Mastro, Neeraj Nepal, Jeffrey Woodward, Rachael Myers-Ward, Evan Glaser, Jaime Freitas, Alan Jacobs, James Gallagher, Alyssa Mock, Daniel Pennachio, Jenifer Hajzus, Mona Ebrish, Travis Anderson, Karl Hobart, Jennifer Hite, Charles Eddy
Publikováno v:
Radar Sensor Technology XXV.
Autor:
Rachael L. Myers-Ward, Daniel J. Pennachio, Karl D. Hobart, Alan G. Jacobs, Andrei Osinsky, Alyssa L. Mock, Jenifer Hajzus, Jaime A. Freitas, Fikadu Alema, Mona A. Ebrish, Jeffrey M. Woodward, James C. Gallagher, Travis J. Anderson, Charles R. Eddy, Marko J. Tadjer, Jennifer K. Hite, Evan R. Glaser, Neeraj Nepal, Michael A. Mastro
Publikováno v:
Oxide-based Materials and Devices XII.
Ga2O3 is the only ultra-wide bandgap semiconductor with melt-growth substrate technology similar to that of Si, heterostructure device technology similar to that of the III-Nitride family, and high growth rate (GR) epitaxial technologies such as MOCV