Zobrazeno 1 - 10
of 488
pro vyhledávání: '"Jenichen, B."'
Publikováno v:
Phys. Rev. B 86, 155309 (2012)
We analyze fluctuation of the layer thicknesses and its influence on the strain state of (In,Ga)As/(Al,Ga)As micro-tubes containing quantum well structures. In those structures a curved high-mobility two-dimensional electron gas (HM2DEG) is establish
Externí odkaz:
http://arxiv.org/abs/1907.09368
Publikováno v:
Appl. Phys. Lett. 89, 051915 (2006)
The phase transition near 40~$^{\circ }$C of both as-grown thin epitaxial MnAs films prepared by molecular beam epitaxy on GaAs(001) and nanometer-scale disks fabricated from the same films is studied. The disks are found to exhibit a pronounced hyst
Externí odkaz:
http://arxiv.org/abs/1907.07027
Publikováno v:
Journal of Physics: Conference Series 471 (2013) 012022
Co2FeSi/GaAs(110) and Co2FeSi/GaAs(-1-1-1)B hybrid structures were grown by molecular-beam epitaxy (MBE) and characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). The films contain inhomogeneous distributions of ordered
Externí odkaz:
http://arxiv.org/abs/1907.05869
Publikováno v:
J. Phys. D: Appl. Phys. 43 (2010) 285404
Co$_{2}$FeSi/GaAs(111)B hybrid structures are grown by molecular-beam epitaxy and characterized by transmission electron microscopy (TEM) and x-ray diffraction. The Co$_{2}$FeSi films grow in an island growth mode at substrate temperatures $T_{S}$ be
Externí odkaz:
http://arxiv.org/abs/1907.05306
Autor:
Jenichen, B, Herfort, J, Hanke, M, Jahn, U, Kong, X, Dau, M T, Trampert, A, Kirmse, H, Erwin, S C
Publikováno v:
J. Appl. Phys. 120, 225304 (2016)
Co$_{2}$TiSi films were grown by molecular beam epitaxy on GaAs(001) and analyzed using reflection high-energy electron diffraction, and electron microscopy. In addition, X-ray diffraction was combined with lattice parameter calculations by density f
Externí odkaz:
http://arxiv.org/abs/1907.05238
Autor:
Jenichen, B, Hanke, M, Gaucher, S, Trampert, A, Herfort, J, Kirmse, H, Haas, B, Willinger, E, Huang, X, Erwin, S C
Publikováno v:
Physical Review Materials 2, 051402(R) (2018)
Fe$_{3}$Si/Ge(Fe,Si)/Fe$_{3}$Si thin film stacks were grown by a combination of molecular beam epitaxy and solid phase epitaxy (Ge on Fe$_{3}$Si). The stacks were analyzed using electron microscopy, electron diffraction, and synchrotron X-ray diffrac
Externí odkaz:
http://arxiv.org/abs/1907.05189
We investigate the formation of lattice matched single-crystalline Fe$_3$Si/GaAs(001) ferromagnet/semiconductor hybrid structures by Volmer-Weber island growth, starting from the epitaxial growth of isolated Fe$_3$Si islands up to the formation of co
Externí odkaz:
http://arxiv.org/abs/1907.05076
Autor:
Sikora, O., Kalt, J., Sternik, M., Ptok, A., Jochym, P. T., Łażewski, J., Parlinski, K., Piekarz, P., Sergueev, I., Wille, H. -C., Herfort, J., Jenichen, B., Baumbach, T., Stankov, S.
The structure and dynamical properties of the Fe$_3$Si/GaAs(001) interface are investigated by density functional theory and nuclear inelastic scattering measurements. The stability of four different atomic configurations of the Fe$_3$Si/GaAs multila
Externí odkaz:
http://arxiv.org/abs/1904.04122
Publikováno v:
In Journal of Alloys and Compounds 25 March 2021 858
Autor:
Dantscher, K. -M., Kozlov, D. A., Olbrich, P., Zoth, C., Faltermeier, P., Lindner, M., Budkin, G. V., Tarasenko, S. A., Belkov, V. V., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A., Weiss, D., Jenichen, B., Ganichev, S. D.
Publikováno v:
Phys. Rev. B 92, 165314 (2015)
We report on the observation of cyclotron resonance induced photocurrents, excited by continuous wave terahertz radiation, in a 3D topological insulator (TI) based on an 80 nm strained HgTe film. The analysis of the photocurrent formation is supporte
Externí odkaz:
http://arxiv.org/abs/1503.06951