Zobrazeno 1 - 10
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pro vyhledávání: '"Jenichen, A."'
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Violence against women in politics is on the rise, threatening political achievements with respect to equality. Little research, however, has been conducted on the experiences of women from minority communities. This article, therefore, take
Violence against women in politics is on the rise, threatening political achievements with respect to equality. Little research, however, has been conducted on the experiences of women from minority communities. This article, therefore, take
Externí odkaz:
http://hdl.handle.net/10454/20049
Autor:
Schiaber, Ziani de Souza, Calabrese, Gabriele, Kong, Xiang, Trampert, Achim, Jenichen, Bernd, da Silva, José Humberto Dias, Geelhaar, Lutz, Brandt, Oliver, Fernández-Garrido, Sergio
Publikováno v:
Nano Lett. 2017, 17, 63
We present a conceptually novel approach to achieve selective area epitaxy of GaN nanowires. The approach is based on the fact that these nanostructures do not form in plasma-assisted molecular beam epitaxy on structurally and chemically uniform cati
Externí odkaz:
http://arxiv.org/abs/2401.16514
Publikováno v:
Phys. Rev. B 86, 155309 (2012)
We analyze fluctuation of the layer thicknesses and its influence on the strain state of (In,Ga)As/(Al,Ga)As micro-tubes containing quantum well structures. In those structures a curved high-mobility two-dimensional electron gas (HM2DEG) is establish
Externí odkaz:
http://arxiv.org/abs/1907.09368
Publikováno v:
Appl. Phys. Lett. 89, 051915 (2006)
The phase transition near 40~$^{\circ }$C of both as-grown thin epitaxial MnAs films prepared by molecular beam epitaxy on GaAs(001) and nanometer-scale disks fabricated from the same films is studied. The disks are found to exhibit a pronounced hyst
Externí odkaz:
http://arxiv.org/abs/1907.07027
Publikováno v:
Journal of Physics: Conference Series 471 (2013) 012022
Co2FeSi/GaAs(110) and Co2FeSi/GaAs(-1-1-1)B hybrid structures were grown by molecular-beam epitaxy (MBE) and characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). The films contain inhomogeneous distributions of ordered
Externí odkaz:
http://arxiv.org/abs/1907.05869
Publikováno v:
J. Phys. D: Appl. Phys. 43 (2010) 285404
Co$_{2}$FeSi/GaAs(111)B hybrid structures are grown by molecular-beam epitaxy and characterized by transmission electron microscopy (TEM) and x-ray diffraction. The Co$_{2}$FeSi films grow in an island growth mode at substrate temperatures $T_{S}$ be
Externí odkaz:
http://arxiv.org/abs/1907.05306
Autor:
Jenichen, B, Herfort, J, Hanke, M, Jahn, U, Kong, X, Dau, M T, Trampert, A, Kirmse, H, Erwin, S C
Publikováno v:
J. Appl. Phys. 120, 225304 (2016)
Co$_{2}$TiSi films were grown by molecular beam epitaxy on GaAs(001) and analyzed using reflection high-energy electron diffraction, and electron microscopy. In addition, X-ray diffraction was combined with lattice parameter calculations by density f
Externí odkaz:
http://arxiv.org/abs/1907.05238
Autor:
Jenichen, B, Hanke, M, Gaucher, S, Trampert, A, Herfort, J, Kirmse, H, Haas, B, Willinger, E, Huang, X, Erwin, S C
Publikováno v:
Physical Review Materials 2, 051402(R) (2018)
Fe$_{3}$Si/Ge(Fe,Si)/Fe$_{3}$Si thin film stacks were grown by a combination of molecular beam epitaxy and solid phase epitaxy (Ge on Fe$_{3}$Si). The stacks were analyzed using electron microscopy, electron diffraction, and synchrotron X-ray diffrac
Externí odkaz:
http://arxiv.org/abs/1907.05189
We investigate the formation of lattice matched single-crystalline Fe$_3$Si/GaAs(001) ferromagnet/semiconductor hybrid structures by Volmer-Weber island growth, starting from the epitaxial growth of isolated Fe$_3$Si islands up to the formation of co
Externí odkaz:
http://arxiv.org/abs/1907.05076
Autor:
Sikora, O., Kalt, J., Sternik, M., Ptok, A., Jochym, P. T., Łażewski, J., Parlinski, K., Piekarz, P., Sergueev, I., Wille, H. -C., Herfort, J., Jenichen, B., Baumbach, T., Stankov, S.
The structure and dynamical properties of the Fe$_3$Si/GaAs(001) interface are investigated by density functional theory and nuclear inelastic scattering measurements. The stability of four different atomic configurations of the Fe$_3$Si/GaAs multila
Externí odkaz:
http://arxiv.org/abs/1904.04122