Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Jenica Neamtu"'
Autor:
George SUCIU, Andrei Sorin NEAMTU, Jenica NEAMTU, Dragos OVEZEA, Maria Cristina DITU, Gabriel PETRESCU
Publikováno v:
INCAS Bulletin, Vol 10, Iss 4, Pp 181-190 (2018)
Leak monitoring is an essential operation that must be taken into consideration while making the design of a spatial vehicle. In order to make these vehicles function correctly in space and to avoid disasters, one needs to integrate multiple sensors
Externí odkaz:
https://doaj.org/article/6c9a00a492c94534b1b4eacf82e3a741
Publikováno v:
Sensors, Vol 21, Iss 7, p 2564 (2021)
Many applications require galvanic isolation between the circuit where the current is flowing and the measurement device. While for AC, the current transformer is the method of choice, in DC and, especially for low currents, other sensing methods mus
Externí odkaz:
https://doaj.org/article/21405b6e845c483f979485d16e434444
Autor:
Jenica Neamtu, Marius Volmer
Publikováno v:
The Scientific World Journal, Vol 2014 (2014)
Zn1−xNixO (x=0.03÷0.10) and Zn1−xFexO (x=0.03÷0.15) thin films were synthesized by sol-gel method. The structure and the surface morphology of zinc oxide thin films doped with transition metal (TM) ions have been investigated by X-ray diffracti
Externí odkaz:
https://doaj.org/article/07914637d5864fa794c2b4a4d9af87ba
Publikováno v:
Electronics; Volume 11; Issue 23; Pages: 3888
An exchanged-biased anisotropic magnetoresistance bridge sensor for low currents measurement is designed and implemented. The sensor has a simple construction (single mask) and is based on results from micromagnetic simulations. For increasing the se
Autor:
Jenica Neamtu, Andrei Sorin Neamtu
Publikováno v:
Advanced Manufacturing Technologies for Micro- and Nanosystems in Security and Defence.
For high temperature sensing applications, metal/oxide/semiconductor (MOS) devices based on SiC show great promise, particularly above 200 °C, which represents an upper bound for MOS devices based on silicon (Si) semiconductor. This paper presents a
Autor:
Marius Volmer, Jenica Neamtu
Publikováno v:
The Scientific World Journal, Vol 2014 (2014)
The Scientific World Journal
The Scientific World Journal
Zn1−xNixO(x=0.03÷0.10) andZn1−xFexO(x=0.03÷0.15) thin films were synthesized by sol-gel method. The structure and the surface morphology of zinc oxide thin films doped with transition metal (TM) ions have been investigated by X-ray diffraction
Autor:
Jenica Neamtu, Marius Volmer
Publikováno v:
IEEE Transactions on Magnetics. 48:1577-1580
In this paper are presented results of galvanomagnetic measurements and micromagnetic simulations performed on low-field magnetic sensors based on the planar Hall effect (PHE). Disc-shaped structures of the type Co/Cu/Ni80Fe20, 4 mm diameter, deposit
Autor:
Jenica Neamtu, Marius Volmer
Publikováno v:
Journal of Magnetism and Magnetic Materials. 322:1631-1634
Planar Hall effect (PHE) measurements were performed on permalloy (Py)-based thin films and multilayered structures like FeMn/Py/Cu/Py. FeMn is used for pinning the magnetization of the adjacent Py layer by exchange biasing effect. Here, we present s
Autor:
Marius Volmer, Jenica Neamtu
Publikováno v:
Physica B: Condensed Matter. 403:350-353
Thin films of Ni80Fe20 (Permalloy) and structures as Ni80Fe20/NM/Ni80Fe20 were used to build low cost rotation sensors. The structures were deposited onto oxidized Si wafers. NM denotes Cu or Al2O3 layers. Angular dependencies of the planar Hall effe
Autor:
Marius Volmer, Jenica Neamtu
Publikováno v:
Journal of Magnetism and Magnetic Materials. 316:e265-e268
Thin films of Ni 80 Fe 20 (Permalloy) and structures as Ni 80 Fe 20 /NM/Ni 80 Fe 20 were used to build high-sensitivity magnetic field sensors. The structures were deposited onto oxidized Si wafers. NM denotes Cu or Al 2 O 3 layers. We developed a me