Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Jeng-Jung Shen"'
Autor:
Robert A. Metzger, Georgiana Dagnall, Stuart R. Stock, Tong-Ho Kim, Jeng-Jung Shen, April S. Brown
Publikováno v:
Journal of Electronic Materials. 28:933-938
Strained InAsP multiquantum wells (MWQs) were grown on InP(100) substrates by solid source molecular beam epitaxy and were characterized to relate structural and optical quality to growth conditions. The multiquantum wells were grown using either dim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d451f19f39cb0beb3fb99139b02b701c
https://doi.org/10.1007/s11664-999-0199-3
https://doi.org/10.1007/s11664-999-0199-3
Publikováno v:
Journal of Electronic Materials. 29:894-896
Compliant substrates offer a new approach for strain management in semiconductors. Various implementations and processes for achieving substrate compliancy have been proposed and demonstrated. These include the use of twist-, glass-, and metal-bonds.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd651e5e55f7fc0ed21a0641f41d413c
https://doi.org/10.1007/s11664-000-0176-3
https://doi.org/10.1007/s11664-000-0176-3
Autor:
Ming-Huan Tsai, Yu-Lien Huang, Li-Te Lin, Wang Shiang-Bau, Hung-Ming Chen, Eric Ou-Yang, Yuh-Jier Mii, Hsien-Hsin Lin, Hun-Jan Tao, Chia-Cheng Ho, Chen-Ping Chen, Jhon-Jhy Liaw, Jyh-Cherng Sheu, Feng Yuan, Chu-Yun Fu, Yi-Hsuan Liu, Li-Shiun Chen, Chia-Feng Hu, Chen-Nan Yeh, Shih-Peng Tai, Ming-Jie Huang, Chih-Sheng Chang, C.H. Chang, Shu-Tine Yang, Jeff J. Xu, Tsung-Lin Lee, Li-Shyue Lai, Shao-Ming Yu, Clement Hsingjen Wann, Kai-Ting Tseng, Leo Chen, Chih-Chieh Yeh, Ming-Feng Shieh, Chien-Chang Su, Jeng-Jung Shen, Shyue-Shyh Lin, Shih-Ting Hung, Hsien-Chin Lin, Shin-Chih Chen, Kin-Weng Wang, Yuan-Hung Chiu, Tsz-Mei Kwok, Fu-Kai Yang
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
FinFET is the most promising double-gate transistor architecture [1] to extend scaling over planar device. We present a high-performance and low-power FinFET module at 25 nm gate length. When normalized to the actual fin perimeter, N-FinFET and P-Fin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::144d7411e1ccabb3bfe552132a866a0f
https://doi.org/10.1109/iedm.2009.5424367
https://doi.org/10.1109/iedm.2009.5424367
Autor:
Martin A. Brooke, Jeng Jung Shen, Tomas Sarmiento, Nan Marie Jokerst, April S. Brown, Gary May, Shuodan Chen, Zhaoran Huang, Cheolung Cha
Publikováno v:
Optical Modeling and Performance Predictions.
Linear statistical models have been generated to predict the performance of metal-semiconductor-metal (MSM) PDs for multi-gigabit optical interconnections. The models estimate the bandwidth and responsivity of the MSM PDs based on the input factors:
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::858878b55f804187bcf29c85b83e1ca7
https://doi.org/10.1117/12.507337
https://doi.org/10.1117/12.507337
Autor:
April S. Brown, Nan Marie Jokerst, Sang-Woo Seo, A. Doolittle, Sangbeom Kang, Martin A. Brooke, Jeng-Jung Shen, Sa Huang, Thomas F. Kuech
Publikováno v:
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
Heterogeneous integration of dissimilar materials and devices is necessary for the continued advancement of electronic and optoelectronic systems. A range of processes has been developed in recent years that will enable system integration and advance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fd51498621f7cae59a5e4a23853c424
https://doi.org/10.1109/iedm.2001.979465
https://doi.org/10.1109/iedm.2001.979465
Publikováno v:
2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498).
InGaAs/AlInAs HEMT structures have been grown on oxide-bonded InGaAs substrates. De-oxidation and growth conditions are developed that enable good electrical properties. The highest electron mobility obtained was 7258 cm/sup 2//V at 300 K. The surfac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::297c3c7091626fceacc07e3bc5757114
https://doi.org/10.1109/iscs.2000.947142
https://doi.org/10.1109/iscs.2000.947142
Publikováno v:
Journal of Applied Physics. 103:044301
This study explores the effects of the growth rate on InGaAs∕GaAs quantum dots (QDs) in producing ordered QD arrays. Surface morphological observations reveal that the dot density decreases as the growth rate increases and the QDs can be gradually
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88495f51fcb4396199426b1005ae6eb7
https://doi.org/10.1063/1.2841216
https://doi.org/10.1063/1.2841216
Autor:
Chang-Yun Chang, Tsung-Lin Lee, Wann, C., Li-Shyue Lai, Hung-Ming Chen, Chih-Chieh Yeh, Chih-Sheng Chang, Chia-Cheng Ho, Jyh-Cherng Sheu, Tsz-Mei Kwok, Feng Yuan, Shao-Ming Yu, Chia-Feng Hu, Jeng-Jung Shen, Yi-Hsuan Liu, Chen-Ping Chen, Shin-Chih Chen, Li-Shiun Chen, Chen, L., Yuan-Hung Chiu
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM); 2009, p1-4, 4p
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 19:1463
We report the effect of dissimilar anion anneals on the properties of layered quantum dot structures exhibiting vertical self-organization. Such anneals may provide an additional means of controlling dot properties, such as composition, size, and pos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e4fb63cbbe0c2ac9d7665e0740025f3
https://doi.org/10.1116/1.1385916
https://doi.org/10.1116/1.1385916
Autor:
Jeng-Jung Shen, Barry Sievers, April S. Brown, Lawrence A. Bottomley, W. Brent Carter, Patrick Eckert, Robert A. Metzger
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 16:1326
Increasingly, self-assembled quantum dots produced by the Stranski–Krastanov growth mode during molecular beam epitaxy are being used for both photonic and electronic devices. In order to fully realize the potential of these nanostructures, control
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d37c45ae09b80987ae578b6469c24144
https://doi.org/10.1116/1.590068
https://doi.org/10.1116/1.590068