Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Jeng-Hwa Liao"'
Autor:
Jeng-Hwa Liao, 廖政華
95
Multiferroics, which combine ferromagnetism and ferroelectricity in one body, exhibit novel characteristics and could not be achieved separately in either ferroelectric or ferromagnetic (FM) materials. In this study, the multiferroic exchange
Multiferroics, which combine ferromagnetism and ferroelectricity in one body, exhibit novel characteristics and could not be achieved separately in either ferroelectric or ferromagnetic (FM) materials. In this study, the multiferroic exchange
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/39933668598751276668
Autor:
Jeng-Hwa Liao, Jung-Yu Hsieh, Ling-Wu Yang, Tahone Yang, Kuang-Chao Chen, Baonian Guo, Monica Hsiao, Shiryu Lee, Fenglin Wang, Sungho Jo, Kyuha Shim
Publikováno v:
MRS Advances. 7:1534-1539
Autor:
Jeng-Hwa Liao, Zong-Jie Ko, Hsing-Ju Lin, Jung-Yu Hsieh, Ling-Wu Yang, Tahone Yang, Kuang-Chao Chen, Chih-Yuan Lu
Publikováno v:
Solid-State Electronics. 202:108620
Autor:
Hsing-Ju Lin, Jung-Yu Hsieh, Kuang-Chao Chen, Jeng-Hwa Liao, Ling-Wu Yang, Yu-Min Lin, Chih-Yuan Lu, Zong-Jie Ko, Tahone Yang
Publikováno v:
Solid-State Electronics. 146:39-43
Continuous scaling down NAND flash memory toward below 1Xnm node generation will result in serious floating gate (FG) poly depletion and significantly impact the cell reliability performance. In this study, the FG implantation before inter-poly-diele
Autor:
Jeng-Hwa Liao, Tahone Yang, Jung-Yu Hsieh, Hsing-Ju Lin, Kuang-Chao Chen, Ling-Wu Yang, Hang-Ting Lue, Pei-Ying Du, Chih-Yuan Lu
Publikováno v:
Solid-State Electronics. 81:51-57
This study explores the detailed charge-trapping behaviors of silicon–oxide–nitride–oxide–silicon (SONOS) type devices with various charge trapping layers, including silicon oxy-nitride (SiON), nitrogen-rich silicon nitride (N-rich SIN), typi
Autor:
Jeng-Hwa Liao, Kuang-Chao Chen, Chih-Yuan Lu, Ling-Wu Yang, Tahone Yang, Jung-Yu Hsieh, Hsing-Ju Lin, Zong-Jie Ko
Publikováno v:
2016 21st International Conference on Ion Implantation Technology (IIT).
Continuous scaling down NAND FLASH toward below 2Xnm node generation will result in serious Floating Gate (FG) poly depletion due to dopant loss and significantly degrade the cell reliability performance. FG implantation (IMP) before inter-poly-diele
Autor:
Jung-Yu Hsieh, Kuang-Chao Chen, Jeng-Hwa Liao, Ling-Wu Yang, Hsin-Ju Lin, Chih-Yuan Lu, Zong-Jie Ko, Tahone Yang
Publikováno v:
2016 21st International Conference on Ion Implantation Technology (IIT).
The thermal stability of CoSi2 layers on P-doped polycrystalline Si was investigated. It was observed that the additional Ge+ implant is performed prior to Co sputtering can suppress the CoSi2 agglomeration behavior. The samples with Ge+ implant at 5
Publikováno v:
Journal of Physics D: Applied Physics. 40:7625-7628
The strain effect on the magnetotransport properties in La0.9Sr0.1MnO3 films epitaxially deposited on SrTiO3 (STO) and LaAlO3 (LAO) substrates, is demonstrated. Large compressive strain is formed in the films on the LAO substrate; however, that on th
Publikováno v:
Journal of Physics D: Applied Physics. 40:4586-4591
The magnetotransport properties of La0.75Sr0.25MnO3 (LSMO) films epitaxially grown on SrTiO3 (0 0 1) substrate were studied. The Curie temperature (Tc) of LSMO films decreases from 300 to 105 K with a reduction in the film thickness to 5 nm. A clear
Autor:
Jung-Yu Hsieh, Kuang-Chao Chen, Jeng-Hwa Liao, Jung-Yi Guo, Ling-Wu Yang, Tahone Yang, Chih-Yuan Lu, Yu-Min Lin, Cheng Chun-Min
Publikováno v:
2014 20th International Conference on Ion Implantation Technology (IIT).
Cryogenic ion implantation process has received increasing attention because it provides better amorphization performance and less end-of-range defects. In this study, 20nm-thick CoSi 2 film was formed on cryogenic carbon ion-implanted poly-Si substr