Zobrazeno 1 - 10
of 70
pro vyhledávání: '"Jeng Hua Wei"'
Autor:
Sk Ziaur Rahaman, I-Jung Wang, Ding-Yeong Wang, Chi-Feng Pai, Yu-Chen Hsin, Shan-Yi Yang, Hsin-Han Lee, Yao-Jen Chang, Yi-Ching Kuo, Yi-Hui Su, Guan-Long Chen, Fang-Ming Chen, Jeng-Hua Wei, Tuo-Hung Hou, Shyh-Shyuan Sheu, Chih-I Wu, Duan-Lee Deng
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 163-169 (2020)
We have developed a manufacturing-friendly spin-orbit torque magnetic random access memory (SOT-MRAM) technology in CMOS compatible 8-inch fab process. The proposed SOT-MRAM process technology resolves etching non-uniformity and reduction of high res
Externí odkaz:
https://doaj.org/article/f0f3a62054ee4f20ac4fdbc9293e0221
Autor:
Ya-Jui Tsou, Wei-Jen Chen, Chin-Yu Liu, Yi-Ju Chen, Kai-Shin Li, Jia-Min Shieh, Pang-Chun Liu, Wei-Yuan Chung, C. W. Liu, Ssu-Yen Huang, Jeng-Hua Wei, Denny D. Tang, Jack Yuan-Chen Sun
Publikováno v:
IEEE Electron Device Letters. 43:1661-1664
Autor:
Sk Ziaur Rahaman, Yu-Chen Hsin, Shan-Yi Yang, Yao-Jen Chang, Hsin-Han Lee, Kuan-Ming Chen, I-Jung Wang, Guan-Long Chen, Yi-Hui Su, Cheng-Yi Shih, Shih-Ching Chiu, Chih-Yao Wang, Jeng-Hua Wei, Shyh-Shyuan Sheu, Wei-Chung Lo, Duan-Li Deng, Shih-Chieh Chang
Publikováno v:
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).
Autor:
Ming-Chun Hong, Yi-Hui Su, Guan-Long Chen, Yu-Chen Hsin, Yao-Jen Chang, Kuan-Ming Chen, Shan-Yi Yang, I-Jung Wang, SK Ziaur Rahaman, Hsin-Han Lee, Jeng-Hua Wei, Shyh-Shyuan Sheu, Wei-Chung Lo, Shih-Chieh Chang, Tuo-Hung Hou
Publikováno v:
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).
Autor:
Kai Shin Li, Yu Shen Yen, J.Y.-C. Sun, Huan Chi Shih, Jeng Hua Wei, Pang Chun Liu, Ya Jui Tsou, Wei-Jen Chen, Denny Duan-Lee Tang, Chee-Wee Liu, Chih-Huang Lai, Jia Min Shieh
Publikováno v:
IEEE Transactions on Electron Devices. 68:6623-6628
A back-end-of-line compatible 400 °C thermally robust perpendicular spin-orbit torque magnetic tunnel junction (p-SOT-MTJ) memory cell with a tunnel magnetoresistance ratio of 130% is demonstrated. It features an energy-efficient spin-transfer-torqu
Autor:
Ming-Hung Wu, I-Ting Wang, Ming-Chun Hong, Kuan-Ming Chen, Yuan-Chieh Tseng, Jeng-Hua Wei, Tuo-Hung Hou
Publikováno v:
Physical Review Applied. 18
Autor:
Akhil K. Ramesh, Yu Chen Hsin, Jeng Hua Wei, Chih-I Wu, Kuan Ming Chen, Pushpapraj Singh, Yuan-Chieh Tseng, Yi Jan Lin
Publikováno v:
ACS Applied Electronic Materials. 3:4047-4055
Autor:
Ming-Chun Hong, Yao-Jen Chang, Yu-Chen Hsin, Liang-Ming Liu, Kuan-Ming Chen, Yi-Hui Su, Guan-Long Chen, Shan-Yi Yang, I-Jung Wang, SK Ziaur Rahaman, Hsin-Han Lee, Shih-Ching Chiu, Chen-Yi Shih, Chih-Yao Wang, Fang-Ming Chen, Jeng-Hua Wei, Shyh-Shyuan Sheu, Wei-Chung Lo, Minn-Tsong Lin, Chih-I Wu, Tuo-Hung Hou
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Autor:
Yao-Jen Chang, Fang-Ming Chen, Kuan-Ming Chen, Shan-Yi Yang, Yu-Chen Hsin, Sk Ziaur Rahaman, I-Jung Wang, Hsin-Han Lee, Yi-Hui Su, Guan-Long Chen, Cheng-Yi Shih, Shih-Ching Chiu, Jeng-Hua Wei, Shyh-Shyuan Sheu, Wei-Chung Lo, Yuan-Chieh Tseng, Chih-Huang Lai, Denny Tang, Chih-I Wu
Publikováno v:
2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
Autor:
Ziaur Rahaman Sk, Yao-Jen Chang, Yu-Chen Hsin, Shan-Yi Yang, Hsin-Han Lee, I-Jung Wang, Guan-Long Chen, Yi-Hui Su, Jeng-Hua Wei, Shyh-Shyuan Sheu, Wei-Chung Lo, Duan-Li Deng, Shih-Chieh Chang
Publikováno v:
Journal of Magnetism and Magnetic Materials. 565:170296