Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Jen-Wei Pan"'
Autor:
Ta Kang Lo, Jakent Pai, Jia Bin Yeh, Kai Lin Lee, Sheng Cho, Wei Jun Chen, Achilles Fang, Osbert Cheng, Steven Hsu, S. W. Hsieh, You Ren Liu, Vincent Hsueh, Daniel Chen, Zhi Cheng Lee, Widson Wu, Jen Wei Pan, G. C. Hung, Leonard Chen, Yao Chin Cheng
Publikováno v:
2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
How to reduce flicker noise is a public topic and expectable challenge as technique development. In this paper, we focus on four methods to improve flicker noise performance in 22nm technology. 50% ~ 80% flicker noise reduction benefits can be obtain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::728dc3f57ecffc788c2ba1a16dc072bd
https://doi.org/10.1109/vlsi-tsa51926.2021.9440094
https://doi.org/10.1109/vlsi-tsa51926.2021.9440094
Publikováno v:
Journal of Catalysis. 210:39-45
Two kinds of hexagonal boron nitride (h-BN), with different crystallinities, were selected as supports of oxidation catalysts and compared with alumina accordingly. Platinum catalysts were prepared by the incipient wetness method with the precursor H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8fa4bb3ac030428118cef7b1bbc3969
https://doi.org/10.1006/jcat.2002.3638
https://doi.org/10.1006/jcat.2002.3638
Publikováno v:
Applied Catalysis A: General. 219:117-124
Low-crystalline hexagonal boron nitride (h-BN) and γ-alumina supported Pt catalysts were employed to investigate the catalytic destruction of volatile organic compounds (VOC). The 0.3 wt.% Pt catalysts were prepared via incipient wetness method usin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8953b3253887b235eeba90c703ae54dc
https://doi.org/10.1016/s0926-860x(01)00673-1
https://doi.org/10.1016/s0926-860x(01)00673-1
Publikováno v:
Catalysis Today. 63:419-426
The catalytic destruction of volatile organic compound (VOC) benefits from a low oxidation temperature due to less energy consumption. In this study, activated carbon-supported Pt catalysts were prepared for benzene, toluene and xylene (BTX) deep oxi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5917655c473c273ae7eaf9b043fb5014
https://doi.org/10.1016/s0920-5861(00)00487-9
https://doi.org/10.1016/s0920-5861(00)00487-9
Publikováno v:
Journal of Crystal Growth. :923-926
Strain-compensated 1.3 μm AlGaInAs/InP multiquantum well (MQW) lasers with various doping concentrations in the p-AlInAs cladding layer are systematically studied. The lasers with higher doping exhibit lower series resistance, higher maximum output
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76c15bc189e7457b5f49f871f56d59ff
https://doi.org/10.1016/s0022-0248(98)01490-0
https://doi.org/10.1016/s0022-0248(98)01490-0
Publikováno v:
Journal of Crystal Growth. :777-781
Self-organized In 0.5 Ga 0.5 As quantum dots have been successfully grown on vicinal GaAs substrates by molecular beam epitaxy. The density of the quantum dots can be changed by nucleating the dots under different As overpressure. Substrate tilt angl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abb792df24c6979e70762fd07a74d975
https://doi.org/10.1016/s0022-0248(96)01034-2
https://doi.org/10.1016/s0022-0248(96)01034-2
Publikováno v:
Journal of Applied Physics. 79:8367-8370
The residual strain, crystallographic tilt, and surface topography of InxGa1−xAs and InxAl1−xAs (0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a42d26ad72ee5071504220bec318c663
https://doi.org/10.1063/1.362555
https://doi.org/10.1063/1.362555
Publikováno v:
IEEE Journal of Quantum Electronics. 32:442-447
The enhancement of electron barrier height by multistack multiquantum barrier structure is simulated using the transfer matrix method. The validity and feasibility of this concept is verified by the experimental results on GaAs-AlAs multistack multiq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b113d7c890fe9854c364b655cb8ef3f
https://doi.org/10.1109/3.485395
https://doi.org/10.1109/3.485395
Autor:
Jen-Wei Pan, Jen-Inn Chyi
Publikováno v:
IEEE Journal of Quantum Electronics. 32:2133-2138
The temperature dependence of the differential gain, carrier density, and transparency current density for 1.3-/spl mu/m AlGaInAs-InP multiple-quantum-well lasers has been theoretically studied using the optical gain calculation from 250-380 K. The c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a4555cb1ee47681ecac58fa068fed47
https://doi.org/10.1109/3.544760
https://doi.org/10.1109/3.544760