Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Jen-Tai Hsu"'
Autor:
Jen-Tai Hsu, 許仁泰
98
In recent years RFID (Radio Frequency Identification) has been applied in different domains at home and abroad, like logistics, medical treatment, entrance guards, electronic wallets, animal control, etc. On campus, the Ministry of Education
In recent years RFID (Radio Frequency Identification) has been applied in different domains at home and abroad, like logistics, medical treatment, entrance guards, electronic wallets, animal control, etc. On campus, the Ministry of Education
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/53608062893578038420
Publikováno v:
Microelectronic Engineering. 22:285-288
Low frequency noise measurements have been performed on short channel MOSFET's degraded by Fowler-Nordheim (F-N) injection as well as by Hot-Carrier-Injection (HCI). The slow interface traps measured from low frequency noise correlates with the fast
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fe958342841cf5c8ebf50fa6502d4a1
https://doi.org/10.1016/0167-9317(93)90175-5
https://doi.org/10.1016/0167-9317(93)90175-5
Publikováno v:
ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures.
A technique for the measurement of the gate-controlled-diode-current (GCDC) in short-channel MOS transistors is described. This technique uses the internal bipolar action of the MOS transistor to amplify the GCDC, thereby extending the sensitivity of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb580337312f1ac115e44d1c050e61ff
https://doi.org/10.1109/icmts.1993.292895
https://doi.org/10.1109/icmts.1993.292895
Publikováno v:
1991 IEEE International SOI Conference Proceedings.
The low-frequency noise behavior in both the linear and saturation regimes of operation for fully depleted (FD) thin film SOI (silicon-on-insulator) MOSFETs is presented and compared to the noise of partially depleted (PD) thin film MOSFETs. Noise me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a13dcc983d2c368395cd71f2ed0ce8a2
https://doi.org/10.1109/soi.1991.162841
https://doi.org/10.1109/soi.1991.162841
Publikováno v:
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers.
A set of analytical equations for the calculation of large deflection of square or rectangular boron-doped P/sup +/-Si diaphragms under pressure is obtained. Based on these equations and the mechanical properties of the Si thin diaphragm, such as the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60ea459c9b62305fc21c86e5b5ba4625
https://doi.org/10.1109/sensor.1991.148833
https://doi.org/10.1109/sensor.1991.148833
Publikováno v:
IEEE Electron Device Letters. 14:91-93
The oxide damage resulting from exposure to a plasma environment in four different dry-etch tools was investigated using both hot-carrier injection (HCI) and time-dependent dielectric breakdown (TDDB). A strong correlation was observed between hot-ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1be2dc95dd8c0378d51618f90062c58d
https://doi.org/10.1109/55.215118
https://doi.org/10.1109/55.215118
Autor:
Stuart Shumway, Jen-Tai Hsu
Publikováno v:
Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aaa8393c9d42b854e6fff4d1ecbd45f3
https://doi.org/10.7567/ssdm.1995.b-2-3
https://doi.org/10.7567/ssdm.1995.b-2-3
Publikováno v:
MRS Proceedings. 338
Plasma etching can cause damage in gate oxide during ULSI processing. The damage in the oxide is believed to arise through a high field induced stress current. However, there is another type of damage which is due to ion and photon bombardment on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95d34544b6bf1d351858a3b4e5fa0944
https://doi.org/10.1557/proc-338-51
https://doi.org/10.1557/proc-338-51
Publikováno v:
Journal de Physique IV Proceedings
Journal de Physique IV Proceedings, EDP Sciences, 1994, 04 (C6), pp.C6-37-C6-41. ⟨10.1051/jp4:1994606⟩
Journal de Physique IV Proceedings, EDP Sciences, 1994, 04 (C6), pp.C6-37-C6-41. ⟨10.1051/jp4:1994606⟩
The impact of hot-carrier (HC) stress on CMOS inverters at 77K was examined as a function of temperature. It was found that the degradation in inverter propagation delay was about one order less than that of the device transconductance degradation. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7d6e79504331bf06ecccf3a43ae3d7f2
https://hal.archives-ouvertes.fr/jpa-00253100
https://hal.archives-ouvertes.fr/jpa-00253100
Publikováno v:
AIP Conference Proceedings.
In this paper, low frequency noise measurements made on MOS transistors, which have been stressed, is reported. The devices degraded by Fowler‐Nordheim (F‐N) injection as well as by Hot‐Carrier‐Injection (HCI) were studied. We found that the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5f0317fabc0a6412ef55154fe97cea0
https://doi.org/10.1063/1.44679
https://doi.org/10.1063/1.44679