Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Jen-Kon Chen"'
Publikováno v:
IEEE Transactions on Electron Devices. 50:1683-1689
This paper proposes a novel low-leakage BiCMOS deep-trench (DT) diode in a 0.18-/spl mu/m silicon germanium (SiGe) BiCMOS process. By means of the DT and an n/sup +/ buried layer in the SiGe BiCMOS process, a parasitic vertical p-n-p bipolar transist
Publikováno v:
IEEE Electron Device Letters. 24:595-597
This letter proposes a novel low-leakage diode string designs using triple-well technologies in 0.18-/spl mu/m CMOS process for RF-electrostatic discharge (RF-ESD) applications. Based on the characteristics of the low-leakage current and low-capacita
Autor:
Tung-Yang Chen, Chiu-Hsiang Chou, Jen-Kon Chen, Shiao-Shien Chen, Hua-Chou Tseng, Shao-Chang Huang, Tien-Hao Tang, Tsun-Lai Hsu
Publikováno v:
IEEE Electron Device Letters. 24:168-170
This paper investigates the electrostatic discharge (ESD) characteristics of the silicon-germanium heterojunction bipolar transistor (SiGe HBT) in a 0.18-/spl mu/m SiGe BiCMOS process. According to this letter, the open base configuration in the SiGe
Autor:
Klaus Schruefer, Anastasios A. Katsetos, Chih-Yung Lin, Terence B. Hook, Fu Tai Liou, Nivo Rovedo, Jen-Kon Chen, Zhijian Yang, Tze Chiang Chen, C.H. Liu, Ming T. Lee, Y.T. Loh, C. Wann
Publikováno v:
Japanese Journal of Applied Physics. 41:2423-2425
The physical mechanism responsible for negative bias temperature instability (NBTI), which is basic to the minimization of this degradation mode, is investigated, and an analytical model is developed accordingly. Experiments with 1.7 nm to 3.3 nm gat
Autor:
Jen-Kon Chen, M.F. Li, Dim-Lee Kwong, S.P. McAlister, Chunxiang Zhu, C.H. Huang, Albert Chin, W.J. Lin, K.T. Chan, C. Chen, S.W. Sun, D.S. Duh, S.C. Chien, Victor Liang
High quality RF inductors, very low loss and noise CPW and microstrip lines, advanced broad and narrow band filters, and ring resonators have been achieved on Si substrates, using an optimized proton implantation process. The RF performance up to 100
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ea3e37f0a5eb9069810f59e028775afb
https://nrc-publications.canada.ca/eng/view/object/?id=bb431d21-f8a3-44c2-9656-11baec684532
https://nrc-publications.canada.ca/eng/view/object/?id=bb431d21-f8a3-44c2-9656-11baec684532
Autor:
H.C. Hu, D.Y. Wu, C.K. Yang, C.T. Chan, S.W. Sun, S.H. Lu, M.T. Lee, S.C. Chien, Cheng-Huang Kuo, C.J. Tang, T.F. Chen, Mao-Chieh Chen, Tahui Wang, Jen-Kon Chen
Publikováno v:
Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743).
Accelerated oxide breakdown progression in ultra-thin oxide (1.4 nm) SOI pMOSFETs is observed, as compared to bulk devices. The accelerated progression is explained by the increase of hole stress current as a result of breakdown induced channel carri
Autor:
Jen-Kon Chen, Tsun-Lai Hsu, Tung-Yang Chen, Shiao-Shien Chen, Hua-Chou Tseng, Chiu-Hsiang Chou, Tien-Hao Tang
Publikováno v:
2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..
This paper investigates the characteristics of ESD devices in a 0.18 /spl mu/m silicon-germanium (SiGe) BiCMOS process including SiGe heterojunction bipolar transistors (HBTs), gate-grounded N/PMOS transistors, p-n junction diodes in SiGe HBTs, p/sup
Autor:
Victor Liang, Jen-Kon Chen, C.Y. Chen, S.C. Chien, G.W. Huang, C.H. Huang, C. Tseng, Albert Chin, K.T. Chan
Publikováno v:
IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003.
As scaling down the RF MOSFET from 0.18 to 0.13 /spl mu/m technology nodes, the f/sub T/ increases but the NF/sub min/ becomes worse by increasing /spl sim/0.2 dB. A small NF/sub min/ of 0.93 dB is measured at 5.8 GHz in 0.18 /spl mu/m MOSFET using 5
Autor:
Yu-Yin Lin, K.T. Huang, Tung-Ming Pan, Fu-Tai Liou, M. Huang, C.J. Kao, A.Y. Liang, Chiung-Sheng Hsiung, W.Y. Hsieh, P.W. Yen, Jen-Kon Chen, S.H. Lin, C.H. Liu, S.C. Chien, J.H. Lee, S. Huang-Lu, Wen-Tung Chang, Y.J. Chang, M.G. Chen, Y.C. Sheng, Y.T. Loh, Chen-Chung Hsu, Hsiu-Shan Lin
Publikováno v:
2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).
Ultra-thin gate dielectrics processed by remote plasma nitridation (RPN) of N/sub 2/O-grown oxides subsequently followed by NO RTA treatment (N/sub 2/O+RPN+NO process) are reported for the first time as a means to extend the reliability scaling limit
Autor:
Shih-Fen Huang, C. Wann, Ming-Tsan Lee, Tze-Chiang Chen, Klaus Schruefer, Jen-Kon Chen, Chih-Yung Lin, T.H. Ning, N. Rovedo, C.H. Liu, J. Brighten, M.V. Khare, Terence B. Hook
Publikováno v:
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
This work mainly focuses on the NBTI (Negative Bias Temperature Instability) mechanism and investigates the degree of degradation caused by NBTI stress for different gate dielectrics, including thermally-grown and heavily-nitrided oxide films. The ca