Zobrazeno 1 - 10
of 630
pro vyhledávání: '"Jen-Inn Chyi"'
Autor:
Indraneel Sanyal, En-Shuo Lin, Yu-Chen Wan, Kun-Ming Chen, Po-Tsung Tu, Po-Chun Yeh, Jen-Inn Chyi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 130-136 (2021)
This work demonstrates high-performance AlInGaN/AlN/GaN high electron mobility transistors grown on 150 mm p-type low resistivity (resistivity~ 20–100 $\Omega $ -cm) silicon substrate with state-of-the-art Johnson’s figure-of-merit (JFOM). Curren
Externí odkaz:
https://doaj.org/article/b7a90ca0f4994778948b8f1e48b92adf
Autor:
Niraj Man Shrestha, Yiming Li, Chao-Hsuan Chen, Indraneel Sanyal, Jenn-Hawn Tarng, Jen-Inn Chyi, Seiji Samukawa
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 873-878 (2020)
A novel lattice matched double barrier Al0.72In0.16Ga0.12N/Al0.18In0.04Ga0.78N/GaN normally-off high electron mobility transistor (HEMT) is designed and simulated by solving a set of thermodynamic transport equations. Using the experimentally calibra
Externí odkaz:
https://doaj.org/article/69335b4a197e43bb8ff456f049acdc4d
Publikováno v:
Materials, Vol 15, Iss 1, p 42 (2021)
In this work, Al0.83In0.17N/GaN/Al0.18Ga0.82N/GaN epitaxial layers used for the fabrication of double-channel metal–oxide–semiconductor high-electron mobility transistors (MOSHEMTs) were grown on silicon substrates using a metalorganic chemical v
Externí odkaz:
https://doaj.org/article/080d68f036594da0b51d792abffd0686
Publikováno v:
Materials, Vol 14, Iss 19, p 5474 (2021)
Multiple-mesa-fin-channel array patterned by a laser interference photolithography system and gallium oxide (Ga2O3) gate oxide layer deposited by a vapor cooling condensation system were employed in double-channel Al0.83In0.17N/GaN/Al0.18Ga0.82N/GaN
Externí odkaz:
https://doaj.org/article/c04f2850a1d44de6b923ca4c9bc59b4f
Autor:
Chia-Ho Chu, Indu Sarangadharan, Abiral Regmi, Yen-Wen Chen, Chen-Pin Hsu, Wen-Hsin Chang, Geng-Yen Lee, Jen-Inn Chyi, Chih-Chen Chen, Shu-Chu Shiesh, Gwo-Bin Lee, Yu-Lin Wang
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-15 (2017)
Abstract In this study, a new type of field-effect transistor (FET)-based biosensor is demonstrated to be able to overcome the problem of severe charge-screening effect caused by high ionic strength in solution and detect proteins in physiological en
Externí odkaz:
https://doaj.org/article/6da60cdd46894422bf680ada3a777a0d
Autor:
Yu-Ru Huang, Hung-Pin Chen, Pei-Chin Chiu, Jen-Inn Chyi, Bing-Hsiao Wang, Shih-Yuan Chen, Chi-Kuang Sun
Publikováno v:
IEEE Photonics Journal, Vol 4, Iss 3, Pp 699-706 (2012)
This paper investigates terahertz (THz) wave propagation, resonance, and radiation on a THz optoelectronic integrated circuit (THz-OEIC). An efficient THz resonant radiation from 0.6 to 0.7 THz can be achieved with a newly designed 2-D open-ended ram
Externí odkaz:
https://doaj.org/article/b3d9e13656894017941a733198d03616
Publikováno v:
Active and Passive Electronic Components, Vol 2012 (2012)
Effects of gate stack engineering and thermal treatment on electrical and interfacial properties of Ti/Pt/HfO2/InAs metal insulator semiconductor (MIS) capacitors were systematically evaluated in terms of transmission electron microscopy, energy disp
Externí odkaz:
https://doaj.org/article/e802c959d7ed4c1697b68eeca0e3d14d
Autor:
Loganathan Ravi, Muzafar Ahmad Rather, Kun-Lin Lin, Chien-Ting Wu, Tung-Yuan Yu, Kun-Yu Lai, Jen-Inn Chyi
Publikováno v:
ACS Applied Electronic Materials. 5:146-154
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::941c17c47ca35aa133bf578a46dc5ab5
https://doi.org/10.1021/acsaelm.2c01078
https://doi.org/10.1021/acsaelm.2c01078
Autor:
Jen-Inn Chyi, Po-Chun Yeh, Kun-Ming Chen, Indraneel Sanyal, Yu-Chen Wan, Po-Tsung Tu, En-Shuo Lin
Publikováno v:
IEEE Journal of the Electron Devices Society. 9:130-136
This work demonstrates high-performance AlInGaN/AlN/GaN high electron mobility transistors grown on 150 mm p-type low resistivity (resistivity~ 20–100 $\Omega $ -cm) silicon substrate with state-of-the-art Johnson’s figure-of-merit (JFOM). Curren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5beac18046d09be34fab7cfe9e48f484
https://doi.org/10.1109/jeds.2020.3043279
https://doi.org/10.1109/jeds.2020.3043279