Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Jen-Hwan Tsai"'
Autor:
Jen-Hwan Tsai, 蔡震寰
86
The integrated circuits (IC) based on silicon substrate play a main role hitherto in the semiconductor industry and the IC devices can*t be fabricated without SiO2 films. Since the operating performance of the devices is related closely to th
The integrated circuits (IC) based on silicon substrate play a main role hitherto in the semiconductor industry and the IC devices can*t be fabricated without SiO2 films. Since the operating performance of the devices is related closely to th
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/54758852363948922803
Publikováno v:
Science and Technology of Advanced Materials, Vol 9, Iss 4, p 045001 (2008)
We experimentally demonstrate the effect of the rapid thermal annealing (RTA) in nitrogen flow on photoluminescence (PL) of SiO2 films implanted by different doses of Si+ ions. Room-temperature PL from 400-nm-thick SiO2 films implanted to a dose of 3
Externí odkaz:
https://doaj.org/article/21951be7423041e7aad9e712905b8824
Publikováno v:
Integrated Ferroelectrics. 143:32-39
Using RF magnetron sputtering technique, the (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 and (Ba0.8Sr0.2)(Ti0.9Zr0.1)O3 thin films were successfully deposited and annealed on the Pt/Ti/SiO2/Silicon substrates, and their electrical and physical characteristics had bee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdcbdf2e87a33ba9f4aa64bba65519af
https://doi.org/10.1080/10584587.2013.795837
https://doi.org/10.1080/10584587.2013.795837
Publikováno v:
Integrated Ferroelectrics. 143:40-46
We investigated that Al/Ba(Zr0.1Ti0.9)O3 (BZT)/insulator-Silicon metal-ferroelectric-semiconductor (MFIS) and Al/BZT/Pt/Ti/SiO2/Silicon metal-ferroelectric-metal-insu- lator-semiconductor (MFMIS) ferroelectric structures and investigated the memory e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c76dd8c66cd953e059cadafe18f68b5c
https://doi.org/10.1080/10584587.2013.795840
https://doi.org/10.1080/10584587.2013.795840
Publikováno v:
Applied Physics A. 110:211-216
In this study, the electrical conduction and bipolar switching properties in transparent vanadium oxide thin films are investigated and discussed. (110)-oriented vanadium oxide thin films were well deposited onto transparent ITO substrates for the po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e4bff5d389e07cdf26cae55ae84a695
https://doi.org/10.1007/s00339-012-7116-y
https://doi.org/10.1007/s00339-012-7116-y
Autor:
Jen-Hwan Tsai
Publikováno v:
Vacuum. 86:1983-1987
In this study, by using a conventional thermal annealing (CTA), the obviously near-infrared shift and intensity amplification of room-temperature photoluminescence (PL) spectrum could be observed from the 3 × 10 16 cm −2 Si + -implanted 400-nm-thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77f2b0f5a98bcdf973492454194326ba
https://doi.org/10.1016/j.vacuum.2012.04.011
https://doi.org/10.1016/j.vacuum.2012.04.011
Publikováno v:
Ceramics International. 38:S335-S338
In order to improve the piezoelectric and aging properties of the lead-free Li 0.06 (K 0.48 Na 0.52 ) 0.94 (Nb 0.86 Ta 0.08 Sb 0.06 )O 3 piezoelectric ceramics, the conventional solid-state reaction method and the B-side pre-calcined method were achi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f29bf2a6d749c46bfb8fc93b477f7040
https://doi.org/10.1016/j.ceramint.2011.04.114
https://doi.org/10.1016/j.ceramint.2011.04.114
Publikováno v:
Ceramics International. 38:S87-S90
Ferroelectric CaBi 4 Ti 4 O 15 (CBT) thin films were prepared by spin coating technology using solution-based fabrication. The as-deposited CBT thin films were crystallized below 600 °C and the layered perovskite were crystallized at 700 °C using C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::015401835d28dcab95638d91c850ab6b
https://doi.org/10.1016/j.ceramint.2011.04.056
https://doi.org/10.1016/j.ceramint.2011.04.056
Publikováno v:
International Journal of Modern Physics: Conference Series. :552-556
In this study, the effects of annealing temperatures on microstructure and growth properties of Bi 3.9 La 0.1 Ti 3 O 12 (BLT) thin films on ITO substrate under conventional furnace annealing processing as a function of annealing temperatures were dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61a6908e10a5ee16483071785cb18184
https://doi.org/10.1142/s2010194512003765
https://doi.org/10.1142/s2010194512003765
Publikováno v:
International Journal of Modern Physics: Conference Series. :104-108
Electrical and physical properties of as-deposited Bi 3.9 La 0.1 Ti 2.9 V 0.1 O 12 (BLTV) ferroelectric thin films on SiO 2/ Si (100) substrates were improved by low temperature supercritical carbon dioxide fluid (SCF) process treatment. The as-depos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a815848f38a264780636cf016aa2d49
https://doi.org/10.1142/s2010194512003017
https://doi.org/10.1142/s2010194512003017