Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Jen-Hao Song"'
Autor:
Tatsuya Omori, Jen-Hao Song, Ding-Fwu Lii, Horng-Hwa Lu, Sean Wu, James C. Sung, Jow-Lay Huang
Publikováno v:
Thin Solid Films. 520:2247-2250
Surface acoustic wave (SAW) devices based on an aluminum nitride (AlN)/diamond layered structure are attractive due to their high operating frequency. To enhance the operating frequency of a diamond SAW device, we demonstrated one piezoelectric layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fab8e2063abfe9d80623ab022805fabb
https://doi.org/10.1016/j.tsf.2011.08.090
https://doi.org/10.1016/j.tsf.2011.08.090
Publikováno v:
Thin Solid Films. 519:4212-4215
This study reports on the deposition of c-axis oriented boron-aluminum nitride ((B, Al)N) layers on polycrystalline and single crystal (111) diamond substrates using a magnetron co-sputtering system. In this study, the lattice mismatch between (B, Al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd40df6433428d9a6fb5b291f2084658
https://doi.org/10.1016/j.tsf.2011.02.012
https://doi.org/10.1016/j.tsf.2011.02.012
Publikováno v:
Thin Solid Films. 517:4753-4757
In this research, we demonstrated the viability of oriented AlN layer that incorporated BN to enhance the texturing. Wurtzite (Al, B)N films were deposited on a diamond wafer (diamond film on Si wafer) by a co-sputtering technique. The preferred orie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::797d8300d54edc6b4d6279e3e3a9f8fb
https://doi.org/10.1016/j.tsf.2009.03.125
https://doi.org/10.1016/j.tsf.2009.03.125
Publikováno v:
Thin Solid Films. 516:223-227
The growth of epitaxial GaN on polycrystalline diamond using highly c-axis orientated AlN as a buffer layer is an attractive application for heat dissipation of LED devices. In this study, the (B,Al)N layer was used to bridge the gap of lattice misma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f61a5ff15bf198fcc0918c8a0ecc760
https://doi.org/10.1016/j.tsf.2007.07.167
https://doi.org/10.1016/j.tsf.2007.07.167
Autor:
Devki N. Talwar, Ting Mei, Zhe Chuan Fang, Deng Xie, Jen–Hao Song, Chee-Wee Liu, Yi Liu, Zhi Ren Qiu, Jow-Lay Huang
Publikováno v:
International Journal of Nanotechnology. 12:97
Boron doped aluminium nitride (B)AlN films are prepared on diamond substrate by using a co–sputtering system. The dielectric function of diamond substrate and (B)AlN films with B contents of 0%, 3%, 5% are extracted by using the spectroscopic ellip
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b04bee329db50b18d91d14887add447c
https://doi.org/10.1504/ijnt.2015.066197
https://doi.org/10.1504/ijnt.2015.066197
Autor:
Jen-Hao Song, 宋人豪
92
The demand for high-frequency devices has raised due to the increase spread of mobile telephones, satellite broadcasting and wireless local area network system. SAW devices have become popular due to its advantages of small size and fine filt
The demand for high-frequency devices has raised due to the increase spread of mobile telephones, satellite broadcasting and wireless local area network system. SAW devices have become popular due to its advantages of small size and fine filt
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/05250483246226731193
Autor:
Zhe Chuan Feng
Group III-Nitrides semiconductor materials, including GaN, InN, AlN, InGaN, AlGaN and AlInGaN, i.e. (Al, In, Ga)N, are excellent semiconductors, covering the spectral range from deep ultraviolet (DUV) to UV, visible and infrared, with unique properti