Zobrazeno 1 - 10
of 95
pro vyhledávání: '"Jen‐Chung Lou"'
Written by hundreds experts who have made contributions to both enterprise and academics research, these excellent reference books provide all necessary knowledge of the whole industrial chain of integrated circuits, and cover topics related to the t
Publikováno v:
Thin Solid Films. 644:10-15
In this study, indium tin oxide (ITO), zinc oxide (ZnO), tungsten oxide (WO x ), and aluminum nitride (AlN) were employed to fabricate and investigate four transparent resistive random access memory (ReRAMs) structures: ITO/ZnO/ITO (structure 1), ITO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f3b03a95e309eb6182f79c0c55268f5
https://doi.org/10.1016/j.tsf.2017.06.066
https://doi.org/10.1016/j.tsf.2017.06.066
Autor:
Min-Chen Chen, Kuan-Chang Chang, Jin-Cheng Zheng, Jen-Chung Lou, Tong Wang, Ting-Chang Chang, Kai-Huang Chen, Rui Zhang, Yi-Ting Tseng, Tsung-Ming Tsai, Chih-Hung Pan, Ikai Lo, Po-Hsun Chen, Simon M. Sze, Hua-Mao Chen
Publikováno v:
IEEE Electron Device Letters. 37:408-411
This letter investigates the double-ended resistive switching characteristics of indium tin oxide (ITO) resistance random access memory (RRAM). Resistive switching can be achieved around both the active TiN electrode and the inert Pt electrode. In ad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::814d806d3716e833fc20c588548f0906
https://doi.org/10.1109/led.2016.2532883
https://doi.org/10.1109/led.2016.2532883
Autor:
Yichen Fang, Zhihong Zhang, Yimao Cai, Jen-Chung Lou, Kaihui Liu, Li Wang, Jintong Xu, Ru Huang, Zongwei Wang, Yishao Chen
Publikováno v:
NVMTS
In this paper, we investigated the electrical characteristics of RRAM with TiN/BNNF/HfO2/TiN crossbar structure. The hexagonal boron nitride nanofilm (BNNF) was transferred to the interface between the TiN top electrode and the HfO2 switching layer t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ed2a20d8ae6ab3a8c8a80f5026f9b9a
https://doi.org/10.1109/nvmts.2018.8603102
https://doi.org/10.1109/nvmts.2018.8603102
Publikováno v:
2018 IEEE International Conference on Applied System Invention (ICASI).
As lower power requirements become more important and processes become more complex [1], the circuit is more and more affected by the process variation. The purpose of this paper is to research the optimization of low power circuits with high yield.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b55cdcc1f6429eba6ea5403035897c33
https://doi.org/10.1109/icasi.2018.8394412
https://doi.org/10.1109/icasi.2018.8394412
Autor:
Jen-Chung Lou, Ji Chen, Ya-Chi Hung, Kuan-Chang Chang, Tsung-Ming Tsai, Simon M. Sze, Cheng-Hsien Wu, Tian-Jian Chu, Chih-Hung Pan, Min-Chen Chen, Ting-Chang Chang, Jin-Cheng Zheng, Yong-En Syu, Rui Zhang
Publikováno v:
IEEE Electron Device Letters. 36:1138-1141
In this letter, we demonstrate the differing influences of a nitrogen buffering effect in both the switching layer and the indium-tin-oxide (ITO) electrode layer of resistive random access memory (RRAM) which has undergone an NH3 treatment. The nitro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd820856602742d8b2eebdebc072319d
https://doi.org/10.1109/led.2015.2477163
https://doi.org/10.1109/led.2015.2477163
Publikováno v:
Journal of Applied Physics; 5/15/2004, Vol. 95 Issue 10, p5788-5794, 7p, 1 Black and White Photograph, 1 Diagram, 10 Graphs
Low Cost Local Contact Opening by Using Polystyrene Spheres Spin-Coating Method for PERC Solar Cells
Autor:
Chia-Hsun Hsu, Chih-Hsiang Yang, Jen-Chung Lou, Shui-Yang Lien, Chun-Wei Huang, Yi-Han Wang, Chung-Yuan Kung
Publikováno v:
Materials
Materials; Volume 9; Issue 7; Pages: 549
Materials, Vol 9, Iss 7, p 549 (2016)
Materials; Volume 9; Issue 7; Pages: 549
Materials, Vol 9, Iss 7, p 549 (2016)
The passivated emitter and rear cell (PERC) concept is one of the most promising technologies for increasing crystalline silicon solar cell efficiency. Instead of using the traditional laser ablation process, this paper demonstrates spin-coated polys
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e0d95ba53e107fdfddb30a16edc9b5dc
http://europepmc.org/articles/PMC5456904
http://europepmc.org/articles/PMC5456904
Effect of interfacial fluorination on the electrical properties of the inter-poly high-k dielectrics
Publikováno v:
Microelectronic Engineering. 88:945-949
In this paper, the reliabilities and insulating characteristics of the fluorinated aluminum oxide (Al"2O"3) and hafnium oxide (HfO"2) inter-poly dielectric (IPD) are studied. Interface fluorine passivation has been demonstrated in terminating danglin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1ba65dfaf498950b507d74a83761dee
https://doi.org/10.1016/j.mee.2010.12.027
https://doi.org/10.1016/j.mee.2010.12.027
Publikováno v:
ECS Transactions. 35:257-263
The improved data retention characteristics of Polysilicon-oxide-hafnium oxide-oxide-silicon (SOHOS) type nonvolatile memory were obtained by post-HfOB2B trapping layer deposition tetrafluoromethane (CFB4B) plasma treatment. The memory characteristic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f879d43f8e5c1cf2b1d2ffd87338315
https://doi.org/10.1149/1.3568868
https://doi.org/10.1149/1.3568868