Zobrazeno 1 - 9 of 9 pro vyhledávání: '"Jelle Vandereyken"'
5
Defectivity modulation in EUV resists through advanced filtration technologies
Autor: Philippe Foubert, Toru Umeda, Rao Varanasi, Atsushi Hattori, Waut Drent, Jelle Vandereyken, Lucia D'Urzo, Takehito Mizuno, Rajan Beera, Amarnauth Singh
Publikováno v: Advances in Patterning Materials and Processes XXXVII.
The availability of EUV lithography is the mainstream for resolving critical dimension of the advanced technology nodes, currently in the range of 18nm and below [1]. The first insertion of EUVL into manufacturing utilizes chemically amplified resist
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::67486b0702eb9d30fc4162a27a66c5e0
https://doi.org/10.1117/12.2560144
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6
LWR enhancement for 300mm track processing
Autor: Tanaka Yuji, Nakayama Chisayo, Jelle Vandereyken, Waut Drent, Masahiko Harumoto, Charles Pieczulewski, Harold Stokes, Masaya Asai
Publikováno v: Advances in Patterning Materials and Processes XXXV.
Currently, there are many developments in the field of advanced lithography that are helping to move it towards increased HVM feasibility1,2,3,4. Targeted improvements in hardware design for advanced lithography are of interest to our group specifica
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c34b6380feff6e46e7e2b7ecc0b2f5d5
https://doi.org/10.1117/12.2297471
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7
Continuous improvements of defectivity rates in immersion photolithography via functionalized membranes in point-of-use photochemical filtration
Autor: Hareen Bayana, Lucia D'Urzo, Philippe Foubert, Jad Jaber, Aiwen Wu, James Hamzik, Jelle Vandereyken
Publikováno v: SPIE Proceedings.
Specific “killer-defects”, such as micro-line-bridges are one of the key challenges in photolithography’s advanced applications, such as multi-pattern. These defects generate from several sources and are very difficult to eliminate. Pointof-use
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6ede1c97998759c9a0052427cd72deee
https://doi.org/10.1117/12.2258582
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8
Integrated approach to improving local CD uniformity in EUV patterning
Autor: Akhil Singhal, Timothy Tran, Samantha Tan, Liang Chen-Wei, Girish Dixit, David Rio, Nader Shamma, Bart van Schravendijk, Jelle Vandereyken, Rich Wise, Mircea Dusa, Andrew Liang, Katja Viatkina, Steven Chuang, Greg Harm, Brandon Ward, Michael Kubis, Jan Hermans, Jengyi Yu, Sirish Reddy
Publikováno v: SPIE Proceedings.
Extreme ultraviolet (EUV) lithography is crucial to enabling technology scaling in pitch and critical dimension (CD). Currently, one of the key challenges of introducing EUV lithography to high volume manufacturing (HVM) is throughput, which requires
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::418ae4583a1075605142179f6c2e7a59
https://doi.org/10.1117/12.2258192
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9
Focus Spot Reduction by Brush Scrubber Cleaning
Autor: Els Kesters, Hiroki Yonekawa, Antoine Pacco, Kathleen Nafus, Jelle Vandereyken, Ihsan Simms
Publikováno v: Solid State Phenomena. 219:276-279
of preventive backside cleaning steps. These cleaning steps can be introduced after processes that generated high backside defect counts or right before a lithographic wafer exposure. In this study that was performed at imec’s 300mm cleanroom facil
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8faa0a0ee7cf139c56e1a0e16bcee415
https://doi.org/10.4028/www.scientific.net/ssp.219.276
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