Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Jelle Vandereyken"'
Autor:
Andreia Santos, Wesley Zanders, Elke Caron, Masahiko Harumoto, Jelle Vandereyken, Jan V. Hermans, Vincent Truffert, Sandip Halder, Ronald Otten, Leon van Dijk, Richard van Haren
Publikováno v:
Advances in Patterning Materials and Processes XL.
Autor:
Julie Van Bel, Lander Verstraete, Hyo Seon Suh, Stefan De Gendt, Philippe Bezard, Jelle Vandereyken, Waikin Li, Matteo Beggiato, Amir-Hossein Tamaddon, Christophe Beral, Andreia Santos, Boaz Alperson, YoungJun Her
Publikováno v:
Novel Patterning Technologies 2023.
Autor:
Lander Verstraete, Hyo Seon Suh, Julie Van Bel, Purnota Hannan Timi, Remi Vallat, Philippe Bezard, Jelle Vandereyken, Matteo Beggiato, Amir-Hossein Tamaddon, Christophe Beral, Waikin Li, Mihir Gupta, Roberto Fallica
Publikováno v:
Novel Patterning Technologies 2023.
Autor:
Andreia Santos, Yuji Tanaka, Masaya Asai, Masahiko Harumoto, Wesley Zanders, Jelle Vandereyken, Lander Verstraete, Ashish Rathore, Hyo Seon Suh
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2022.
Autor:
Philippe Foubert, Toru Umeda, Rao Varanasi, Atsushi Hattori, Waut Drent, Jelle Vandereyken, Lucia D'Urzo, Takehito Mizuno, Rajan Beera, Amarnauth Singh
Publikováno v:
Advances in Patterning Materials and Processes XXXVII.
The availability of EUV lithography is the mainstream for resolving critical dimension of the advanced technology nodes, currently in the range of 18nm and below [1]. The first insertion of EUVL into manufacturing utilizes chemically amplified resist
Autor:
Tanaka Yuji, Nakayama Chisayo, Jelle Vandereyken, Waut Drent, Masahiko Harumoto, Charles Pieczulewski, Harold Stokes, Masaya Asai
Publikováno v:
Advances in Patterning Materials and Processes XXXV.
Currently, there are many developments in the field of advanced lithography that are helping to move it towards increased HVM feasibility1,2,3,4. Targeted improvements in hardware design for advanced lithography are of interest to our group specifica
Autor:
Hareen Bayana, Lucia D'Urzo, Philippe Foubert, Jad Jaber, Aiwen Wu, James Hamzik, Jelle Vandereyken
Publikováno v:
SPIE Proceedings.
Specific “killer-defects”, such as micro-line-bridges are one of the key challenges in photolithography’s advanced applications, such as multi-pattern. These defects generate from several sources and are very difficult to eliminate. Pointof-use
Autor:
Akhil Singhal, Timothy Tran, Samantha Tan, Liang Chen-Wei, Girish Dixit, David Rio, Nader Shamma, Bart van Schravendijk, Jelle Vandereyken, Rich Wise, Mircea Dusa, Andrew Liang, Katja Viatkina, Steven Chuang, Greg Harm, Brandon Ward, Michael Kubis, Jan Hermans, Jengyi Yu, Sirish Reddy
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet (EUV) lithography is crucial to enabling technology scaling in pitch and critical dimension (CD). Currently, one of the key challenges of introducing EUV lithography to high volume manufacturing (HVM) is throughput, which requires
Publikováno v:
Solid State Phenomena. 219:276-279
of preventive backside cleaning steps. These cleaning steps can be introduced after processes that generated high backside defect counts or right before a lithographic wafer exposure. In this study that was performed at imec’s 300mm cleanroom facil