Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Jelle J. W. Goertz"'
Autor:
Jelle J. W. Goertz, Grazvydas Ziemys, Irina Eichwald, Markus Becherer, Henk J. M. Swagten, Stephan Breitkreutz-v. Gamm
Publikováno v:
AIP Advances, Vol 6, Iss 5, Pp 056407-056407-7 (2016)
Controlled domain wall motion and pinning in nanowires with perpendicular magnetic anisotropy are of great importance in modern magnetic memory and logic devices. Here, we investigate by experiment the DW pinning and depinning from a notch in a magne
Externí odkaz:
https://doaj.org/article/de67bf60db224a549ccb27942dd466c9
Autor:
Sergio Fernández-Garrido, Oliver Brandt, Vladimir M. Kaganer, David van Treeck, Lutz Geelhaar, Gabriele Calabrese, Jelle J. W. Goertz
We investigate in detail the self-assembled nucleation and growth of GaN nanowires by molecular beam epitaxy on crystalline TiN films. We demonstrate that this type of substrate allows the growth of long and thin GaN nanowires that do not suffer from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f3e353a035adaf2fa2f934fe6a47d7f5
http://arxiv.org/abs/1801.02966
http://arxiv.org/abs/1801.02966
Autor:
Markus Becherer, Henk J. M. Swagten, Jelle J. W. Goertz, Grazvydas Ziemys, Irina Eichwald, Stephan Breitkreutz-v. Gamm
Publikováno v:
AIP Advances, Vol 6, Iss 5, Pp 056407-056407-7 (2016)
AIP Advances, 6(5):056407, 1-7. American Institute of Physics
AIP Advances, 6(5):056407, 1-7. American Institute of Physics
Controlled domain wall motion and pinning in nanowires with perpendicular magnetic anisotropy are of great importance in modern magnetic memory and logic devices. Here, we investigate by experiment the DW pinning and depinning from a notch in a magne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f8032cf022bc90a5b19de6521f3715ca
https://doaj.org/article/de67bf60db224a549ccb27942dd466c9
https://doaj.org/article/de67bf60db224a549ccb27942dd466c9