Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Jelle Demeulemeester"'
Autor:
A Schrauwen, Kristiaan Temst, Christophe Detavernier, Jelle Demeulemeester, Wouter Devulder, André Vantomme, Davy Deduytsche, CM Comrie
Publikováno v:
Acta Materialia. 130:19-27
The solid solubility of the isomorphous monosilicides during the silicide reaction of Ni-Pt, Ni-Pd and Pt-Pd alloys on Si(100) is comparatively studied in the full composition range. Our study reveals that PtSi and PdSi, exhibiting a minor lattice mi
Autor:
Jelle Demeulemeester, N. M. Santos, K. van Stiphout, V. Joly, Christophe Detavernier, Kristiaan Temst, S. M. C. Miranda, Filip Geenen, L. M. C. Pereira, André Vantomme, Felipe Kremer
Publikováno v:
JOURNAL OF PHYSICS D-APPLIED PHYSICS
© 2019 IOP Publishing Ltd. Solid-state amorphization, the growth of an amorphous phase during annealing, has been studied in a wide variety of thin film structures. Whereas research on the remarkable growth of such a metastable phase has mostly focu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f8004b6df4978284ac4508013eb40da
https://biblio.ugent.be/publication/8598733
https://biblio.ugent.be/publication/8598733
Autor:
C.M. Comrie, Cristian Mocuta, Kristiaan Temst, N. M. Santos, K. van Stiphout, Jelle Demeulemeester, V. Joly, Christophe Detavernier, S. M. C. Miranda, André Vantomme, L. M. C. Pereira, Filip Geenen
Publikováno v:
Journal of Physics D: Applied Physics. 54:015307
We report on the growth of thin NiSi films via the thermal reaction of Ni layers (13–35 nm) with Si(100) substrates modified by ion implantation. By introducing substrate damage or nitrogen impurities prior to the solid-phase reaction, several prop
Autor:
Davit Melkonyan, Jelle Demeulemeester, J. Bogdanowicz, Claudia Fleischmann, François Vurpillot, Wilfried Vandervorst, L. Arnoldi, Arul Kumar
Publikováno v:
Ultramicroscopy
Ultramicroscopy, 2017, 179, pp.100-107. ⟨10.1016/j.ultramic.2017.04.006⟩
Ultramicroscopy, 2017, 179, pp.100-107. ⟨10.1016/j.ultramic.2017.04.006⟩
We present atom probe analysis of 40nm wide SiGe fins embedded in SiO2 and discuss the root cause of artefacts observed in the reconstructed data. Additionally, we propose a simple data treatment routine, relying on complementary transmission electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::98d9f858f0c3a8b48a3080f5f0299232
https://hal.science/hal-01765926
https://hal.science/hal-01765926
Autor:
Davit Melkonyan, J. Bogdanowicz, Jelle Demeulemeester, Claudia Fleischmann, Arul Kumar, Julien Bran, Wilfried Vandervorst
Publikováno v:
Journal of Applied Physics. 124:245105
© 2018 Author(s). Evaluating the thermal processes occurring inside an illuminated nanoscale semiconducting tip is of utmost importance for the physical understanding of laser assisted atom probe tomography (L-APT). In this paper, we present a metho
Autor:
Alexis Franquet, Matty Caymax, Federica Gencarelli, Jelle Demeulemeester, Johan Meersschaut, Kristiaan Temst, Benjamin Vincent, Wilfried Vandervorst, Hugo Bender, André Vantomme, Alain Moussa, Marc Heyns, Roger Loo, Arul Kumar
Publikováno v:
ECS Journal of Solid State Science and Technology. 2:P134-P137
In this contribution, we discuss the crystalline properties of strained and strain-relaxed CVD-grown GeSn layers with Sn content in the range 6.4-12.6 at.%. A positive deviation from Vegard's law was observed and a new experimental bowing parameter w
Autor:
Christophe Detavernier, C.M. Comrie, Dries Smeets, Jelle Demeulemeester, Werner Knaepen, C van der Walt, K. J. Pondo, André Vantomme, A Habanyama
Publikováno v:
Thin Solid Films. 526:261-268
We have used real-time Rutherford backscattering spectrometry to determine the dominant diffusing species during the formation of nickel germanide and palladium germanide; two of the most promising candidates for use as ohmic contacts were germanium
Autor:
Roger Loo, Kristiaan Temst, M. Adachi, Shigeaki Zaima, Jelle Demeulemeester, Marika Nakamura, T. Clarysse, Federica Gencarelli, Osamu Nakatsuka, Shotaro Takeuchi, Matty Caymax, André Vantomme, Yosuke Shimura, Benjamin Vincent
Publikováno v:
ECS Transactions. 41:231-238
In this paper, we reports our recent studies of the electrical and crystalline properties of heteroepitaxial Ge1-xSnx layers with various Sn content of 0~25%. We examined Ga-doping in strained Ge1-xSnx layers for developing source/drain stressor in C
Autor:
Johan Dekoster, André Vantomme, Shigeaki Zaima, Jelle Demeulemeester, T. Clarysse, Tsuyoshi Nishimura, Akira Sakai, Matty Caymax, Shotaro Takeuchi, Yosuke Shimura, Geert Eneman, Osamu Nakatsuka, Roger Loo, Benjamin Vincent
Publikováno v:
Solid-State Electronics. 60:53-57
In this paper, we propose the fabrication of whole strained Ge complementary metal–oxide-semiconductor (CMOS) with Ge 1− x Sn x materials as stressors to outperform the state-of-the-art uniaxial compressive strained Si CMOS. Ge 1− x Sn x materi
Autor:
Johan Dekoster, Roger Loo, T. Clarysse, Andrea Firrincieli, Shotaro Takeuchi, Benjamin Vincent, Tsuyoshi Nishimura, Matty Caymax, Jelle Demeulemeester, Geert Eneman, Shigeaki Zaima, Yosuke Shimura, Osamu Nakatsuka, André Vantomme
Publikováno v:
Microelectronic Engineering. 88:342-346
In order to outperform current uniaxial compressively strained Silicon channel pMOSFET technology (with embedded SiGe source/drain), switching to strained Ge channel is mandatory. GeSn materials, having larger lattice parameter than Ge, are proposed