Occurrence of the collective Ziman limit of heat transport in cubic semiconductors Si, Ge, AlAs and AlP: scattering channels and size effects

Autor: Jelena Sjakste, Maxime Markov, Raja Sen, Giorgia Fugallo, Lorenzo Paulatto, Nathalie Vast

Publikováno v: Nano Express, Vol 5, Iss 3, p 035018 (2024)

In this work, we discuss the possibility of reaching the Ziman conditions for collective heat transport in cubic bulk semiconductors, such as Si, Ge, AlAs and AlP. In natural and enriched silicon and germanium, the collective heat transport limit is

Externí odkaz: https://doaj.org/article/8fd29b5b2be14d609a17e9f8fa16a53b

Ab initio calculations of the ultrafast relaxation dynamics and electronic transport properties in semiconductors

Autor: Raja Sen, Nathalie Vast, Jelena Sjakste

Publikováno v: Advances in Ultrafast Condensed Phase Physics III.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e8efab88af483f668f09a173a170147a
https://doi.org/10.1117/12.2621582

Photoexcited electron dynamics and energy loss rate in silicon: temperature dependence and main scattering channels

Autor: Raja Sen, Nathalie Vast, Jelena Sjakste

Publikováno v: Proceedings-of-the-SPIE-The-International-Society-for-Optical-Engineering
Proceedings-of-the-SPIE-The-International-Society-for-Optical-Engineering, 2022, SPIE Proceedings, 12132, pp.1213204. ⟨10.1117/12.2621174⟩

International audience; In this work, we revisit the DFT-based results for the electron-phonon scattering in highly excited silicon. Using state-of-the-art ab initio methods, we examine the main scattering channels which contribute to the total elect

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4dd87b41c305c45dd24600cb14d9237c
https://doi.org/10.1117/12.2621174

Boron carbide under torsional deformation: evidence of the formation of chain vacancies in the plastic regime

Autor: Amrita Chakraborti, Antoine Jay, Olivier Hardouin Duparc, Jelena Sjakste, Keevin Béneut, Nathalie Vast, Yann Le Godec

Publikováno v: Acta Materialia
Acta Materialia, 2022, 226, pp.117553. ⟨10.1016/j.actamat.2021.117553⟩

International audience; We report a combined experimental and theoretical study of boron carbide under stress/deformation. A special rotating anvil press, the rotating tomography Paris Edinburgh cell (RoToPEC), has been used to apply torsional deform

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3d87f6ce7e41114f7258561e4a48ee85
http://arxiv.org/abs/2108.04321

Ultrafast relaxation dynamics of highly excited hot electrons in silicon

Autor: Hiroshi Tanimura, Jun'ichi Kanasaki, Nathalie Vast, Jelena Sjakste, Katsumi Tanimura

Publikováno v: Physical Review B
Physical Review B, American Physical Society, 2019, 100 (3), ⟨10.1103/PhysRevB.100.035201⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2019, 100 (3), ⟨10.1103/PhysRevB.100.035201⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2019, 100 (3), ⟨10.1103/PhysRevB.100.035201⟩
Physical Review B, 2019, 100 (3), ⟨10.1103/PhysRevB.100.035201⟩

International audience; Ultrafast relaxation dynamics of hot electrons with excess energies exceeding 1 eV in Si is studied using time-resolved photoemission spectroscopy and ab initio calculations. Experimentally, the photoemission peaks from hot el

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::074b6dc9dca4176f545bf0f6496dc752
https://hal.archives-ouvertes.fr/hal-03327955/document