Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Jei Li Hou"'
Autor:
Ting-Jen Hsueh, Jei-Li Hou
Publikováno v:
ACS Applied Electronic Materials. 3:4817-4823
This study uses a micro-electromechanical system (MEMS) structure to fabricate a cupric oxide (CuO) nanosheet (NS) gas sensor. A CuO-NS with a size ranging from 100 to 500 nm is produced by chemica...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90176cd14f6490f995b220c9aa76a8d7
https://doi.org/10.1021/acsaelm.1c00684
https://doi.org/10.1021/acsaelm.1c00684
Publikováno v:
Journal of The Electrochemical Society; Aug2022, Vol. 169 Issue 8, p1-5, 5p
Publikováno v:
ECS Journal of Solid State Science and Technology. 10:055002
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d84ac822c73bdd3bd4dc71f478b361d7
https://doi.org/10.1149/2162-8777/abfa2a
https://doi.org/10.1149/2162-8777/abfa2a
Autor:
Jei-Li Hou, Ting-Jen Hsueh
Publikováno v:
ACS Applied Electronic Materials; 11/23/2021, Vol. 3 Issue 11, p4817-4823, 7p
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:Q120-Q122
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::302705dcf11f9339fadb206bc9823fd3
https://doi.org/10.1149/2.0171709jss
https://doi.org/10.1149/2.0171709jss
Publikováno v:
Sensors and Actuators B: Chemical. 197:137-141
This study presents a zinc oxide (ZnO) Schottky humidity sensor. This kind of sensor needs a forward voltage bias to detect electrical changes in relative humidity (RH). Authors replace the external voltage bias for the sensor with the bias from GaIn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cda4d478a35d1094f218b8d36dbb161
https://doi.org/10.1016/j.snb.2014.02.073
https://doi.org/10.1016/j.snb.2014.02.073
Publikováno v:
IEEE Electron Device Letters. 36:207-209
We report the fabrication of a complementary electrochromic device (CECD) in the form of glass/indium-tin-oxide (ITO)/NiO/gel-polymer electrode (GPE)/MoO3/ITO/glass, and the integration of a CECD/GaAs-based triple-junction (TJ) solar cell system. It
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e478c87fb50783d44bfdd91e6d2567f7
https://doi.org/10.1109/led.2014.2385865
https://doi.org/10.1109/led.2014.2385865
Autor:
Shoou-Jinn Chang, Shuguang Li, Chun-Hsing Liu, Kin-Tak Lam, Jei-Li Hou, Sheng Po Chang, Ting-Jen Hsueh
Publikováno v:
IEEE Journal of Photovoltaics. 3:991-996
In this paper, the fabrication of GaInP/GaAs/Ge triple-junction (TJ) solar cells with an Al-doped ZnO (AZO) transparent electrode and a ZnO nanowire (NW) antireflection (AR) layer is reported. It was found that ZnO NWs/AZO could provide a smaller ref
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e28f1e7846c33091ab0266d460bf7d5
https://doi.org/10.1109/jphotov.2013.2258192
https://doi.org/10.1109/jphotov.2013.2258192
Autor:
Chun Hsing Liu, Jei-Li Hou, Meng-Chu Chen, Shoou-Jinn Chang, Shuguang Li, Jinn-Kong Sheu, Ting-Jen Hsueh
Publikováno v:
IEEE Transactions on Electron Devices. 60:1178-1182
The authors report the fabrication of GaN-based planar p-i-n photodetectors (PDs) with and without the Be-implanted isolation ring. With the isolation ring, we achieved a much smaller leakage current below 10 pA. It was also found that the responsivi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21a01badc9030e2ea73f40722104a5e3
https://doi.org/10.1109/ted.2013.2239298
https://doi.org/10.1109/ted.2013.2239298
Publikováno v:
Progress in Photovoltaics: Research and Applications. 21:1645-1652
ZnO nanowire (NW) grown on triple-junction (TJ) solar cells via the hydrothermal growth method to enhance efficiency is investigated. In this paper, experimental results indicate that TJ solar cells with ZnO NW as an antireflection (AR) coating have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68f25cd5be67523181fa75d564000790
https://doi.org/10.1002/pip.2304
https://doi.org/10.1002/pip.2304