Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Jehong Oh"'
Autor:
Jehong Oh, Jungel Ryu, Duyoung Yang, Seungmin Lee, Jongmyeong Kim, Kyungwook Hwang, Junsik Hwang, Dongho Kim, Yongjo Park, Euijoon Yoon, Ho Won Jang
Publikováno v:
Crystal Growth & Design. 22:1770-1777
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::046cfb876c3150fcd92fefff5608e383
https://doi.org/10.1021/acs.cgd.1c01363
https://doi.org/10.1021/acs.cgd.1c01363
Autor:
Duyoung Yang, Byungsoo Kim, Jehong Oh, Tae Hyung Lee, Jungel Ryu, Sohyeon Park, Seungsoo Kim, Euijoon Yoon, Yongjo Park, Ho Won Jang
Publikováno v:
ACS applied materialsinterfaces. 14(4)
α-Gallium oxide, with its large band gap energy, is a promising material for utilization in power devices. Sapphire, which has the same crystal structure as α-Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::449a9a45750be41a6db32b16071ee22d
https://pubmed.ncbi.nlm.nih.gov/35040629
https://pubmed.ncbi.nlm.nih.gov/35040629
Autor:
Jeonghwan Jang, Jongmyeong Kim, Donghyun Lee, Daeyoung Moon, Yongjo Park, Seungmin Lee, Euijoon Yoon, Giwoong Kim, Jehong Oh
Publikováno v:
Journal of Crystal Growth. 507:103-108
The epitaxial lateral overgrowth of GaN by metal-organic chemical vapor deposition using a nano-cavity patterned sapphire substrate (NCPSS) was investigated. The NCPSS, with a hexagonal non-close-packed nano-cavity pattern on the sapphire substrate,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f83d11e50b5829c53b6987f1ecdd3d10
https://doi.org/10.1016/j.jcrysgro.2018.11.001
https://doi.org/10.1016/j.jcrysgro.2018.11.001
Autor:
Jun-hee Choi, Kang Sungjin, Tak Jeong, Yong-Hoon Cho, Kyung-Wook Hwang, Jun-Sik Hwang, Young Chul Sim, Jehong Oh, Seungmin Lee, Euijoon Yoon, Yongjo Park, Jungel Ryu, Tae-Hoon Chung, Jongmyeong Kim
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-11 (2020)
Scientific Reports
Scientific Reports
A discrete core-shell-like micro-light-emitting diode (micro-LED) array was grown on a 100 nm-thick sapphire nano-membrane array without harmful plasma etching for chip singulation. Due to proper design for the sapphire nano-membrane array, an array
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::860f14bd056fcfee4b13b3385f12a8d6
https://doi.org/10.1038/s41598-020-64478-3
https://doi.org/10.1038/s41598-020-64478-3
Autor:
Jungel Ryu, Jehong Oh, Seungmin Lee, Yongjo Park, Jongmyeong Kim, Euijoon Yoon, Seoung-Hwan Park
Publikováno v:
Scientific Reports
Scientific Reports, Vol 9, Iss 1, Pp 1-10 (2019)
Scientific Reports, Vol 9, Iss 1, Pp 1-10 (2019)
Highly polarized photoluminescence (PL) from c-plane InGaN/GaN multiple quantum wells (MQWs) grown on stripe-shaped cavity-engineered sapphire substrate (SCES) was realized. The polarization ratio was as high as 0.74 at room temperature. High-resolut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ee50463e49a03e7a9dd277dd268d561
http://europepmc.org/articles/PMC6547675
http://europepmc.org/articles/PMC6547675
Autor:
Duyoung Yang, Byungsoo Kim, Tae Hyung Lee, Jehong Oh, Seungmin Lee, Woonbae Sohn, Euijoon Yoon, Yongjo Park, Ho Won Jang
Publikováno v:
ACS Applied Electronic Materials; 10/26/2021, Vol. 3 Issue 10, p4328-4336, 9p