Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Jeho Na"'
Autor:
Ji Hun Choi, Chan Woo Park, Bock Soon Na, Jong-Heon Yang, Jeho Na, Jae-Eun Pi, Hee-Ok Kim, Chi-Sun Hwang, Seunghyup Yoo
Publikováno v:
Journal of Information Display, Vol 24, Iss 2, Pp 137-145 (2023)
Highly-stable molybdenum/aluminum (Mo/Al) bilayered electrodes have been demonstrated as promising candidates for use in stretchable electronics. The serpentine-shaped Mo/Al bilayer electrode is shown to be operable with up to 220% elongation and no
Externí odkaz:
https://doaj.org/article/acdaba5d015c4433ba771e53b0cdcaa5
Publikováno v:
Solid-State Electronics. 140:12-17
Enhancement-mode transistors with uniform turn-on threshold voltage (Vth) can be achieved using low damage and low rate gate recess etching techniques. In this work, dry etching conditions for a AlGaN/GaN heterostructure with an ultra-low etching rat
Publikováno v:
physica status solidi (a). 218:2000750
Autor:
Gayoung Kim, Jung Wook Lim, Jiwoon Jeong, Sun Jin Yun, Kwang Hoon Jung, Taeyoon Kim, Jeho Na, Seong Hyun Lee
Publikováno v:
ACS applied materialsinterfaces. 10(31)
A new concept of a tunneling oxide-free nonvolatile memory device with a deep trap interface floating gate is proposed. This device demonstrates a high on/off current ratio of 107 and a sizable memory window due to deep traps at the interface between
Autor:
Jeho Na, Youngrak Park, Chi-Hoon Jun, Sang-Ouk Ryu, Hyun-Gyu Jang, Sang Choon Ko, Junbo Park, Hyun-Soo Lee, Eun Soo Nam, Dong Yun Jung, Hyoung-Seok Lee
Publikováno v:
IEEE Electron Device Letters. 36:1132-1134
A large GaN-Schottky barrier diode (SBD) with a recessed dual anode metal is proposed to achieve improved the forward characteristics without a degradation of the reverse performances. Using optimized dry etch condition for a large device, the electr
Autor:
Chi-Hoon Jun, Sang Choon Ko, Jeho Na, Youngrak Park, Jae Kyoung Mun, Woojin Chang, Jung-Jin Kim, Eun Soo Nam, Hyun-Gyu Jang, Hyun-Soo Lee, Ho-Young Cha
Publikováno v:
Electronics Letters. 50:1164-1165
A low onset voltage AlGaN/GaN diode with a width of 14 mm is achieved. The recess depth of the AlGaN layer is responsible for the low onset voltage. In comparison with the conventional non-recessed diode, the onset voltage reduces by 45% along with a
Autor:
Dong-Yun Jung, Sang Choon Ko, Hyun-Gyu Jang, Jae-Kyoung Mun, Hyun-Soo Lee, Youngrak Park, Eun Soo Nam, Jung-Jin Kim, Jeho Na
Publikováno v:
Japanese Journal of Applied Physics. 54:070302
Bonding-pad electrode-area-etched AlGaN/GaN on a Si-based Schottky barrier diode (SBD) is fabricated. Electrode mesa etching leads to reverse bias leakage current about one order of magnitude lower than that of SBD without electrode mesa etching, but
Autor:
Dong-Yun Jung, Jae-Kyoung Mun, Jeon-Wook Yang, Hyun-Gyu Jang, Youngrak Park, Jeong Jin Kim, Jing-Hong Lim, Hyun-Soo Lee, Hyung Seok Lee, Sang-Choon Ko, Jeho Na
Publikováno v:
Japanese Journal of Applied Physics. 54:038003
Al2O3 passivation by thermal oxidation of aluminium on AlGaN/GaN high-electron-mobility transistors (HEMTs) without Al2O3 etching is proposed. The deposition of a 5-nm-thick Al film was carried out, followed by a lift-off process to remove Al from th
Autor:
Jinwoong Kim, Yongjun Lim, Keehoon Hong, Hayan Kim, Hyun-Eui Kim, Jeho Nam, Joongki Park, Joonku Hahn, Young-ju Kim
Publikováno v:
Applied Sciences, Vol 9, Iss 4, p 705 (2019)
Most of the previously-tried prototype systems of digital holographic display are of front viewing flat panel-type systems having narrow viewing angle, which do not meet expectations towards holographic displays having more volumetric and realistic 3
Externí odkaz:
https://doaj.org/article/92544cfbb2524b8da72bb387ceffad6c
Autor:
Youngrak Park, Jung-Jin Kim, Woojin Chang, Hyun-Gyu Jang, Jeho Na, Hyunsoo Lee, Chi-Hoon Jun, Ho-young Cha, Jae Kyoung Mun, Sang Choon Ko, Eun Soo Nam
Publikováno v:
Electronics Letters (Wiley-Blackwell); 7/31/2014, Vol. 50 Issue 16, p1164-1165, 2p, 1 Diagram, 2 Graphs