Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Jeffrey W. Teng"'
Publikováno v:
IEEE Microwave and Wireless Technology Letters. 33:447-450
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3532c60850650f3b5a8d050cd973b09c
https://doi.org/10.1109/lmwt.2022.3226660
https://doi.org/10.1109/lmwt.2022.3226660
Autor:
Nelson E. Sepúlveda-Ramos, Jeffrey W. Teng, Adrian Ildefonso, Harrison P. Lee, Sunil G. Rao, John D. Cressler
Publikováno v:
IEEE Transactions on Electron Devices. 70:850-856
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e0df807850f03d0b11ef63fcfba454d
https://doi.org/10.1109/ted.2022.3232755
https://doi.org/10.1109/ted.2022.3232755
Autor:
Delgermaa Nergui, Jeffrey W. Teng, Mozghan Hosseinzadeh, Yaw Mensah, Kan Li, Mariia Gorchichko, Adrian Ildefonso, Brett L. Ringel, En Xia Zhang, Daniel M. Fleetwood, John D. Cressler
Publikováno v:
IEEE Transactions on Nuclear Science. 69:1079-1084
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::876665d02d130fe700529b8954bc464d
https://doi.org/10.1109/tns.2022.3164327
https://doi.org/10.1109/tns.2022.3164327
Autor:
Kan Li, Hanbin Ying, En Xia Zhang, Daniel M. Fleetwood, R. Nathan Nowlin, Yaw Mensah, Hari Parameswaran, Delgermaa Nergui, Adrian Ildefonso, Nelson E. Sepulveda-Ramos, Nathaniel A. Dodds, Jeffrey W. Teng, George N. Tzintzarov, Brett Ringel, Mariia Gorchichko, Clifford D. Cheon, John D. Cressler, Sunil G. Rao
Publikováno v:
IEEE Transactions on Nuclear Science. 69:282-289
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07e2f7950117ea42eefbbf0cbb41ff97
https://doi.org/10.1109/tns.2021.3119536
https://doi.org/10.1109/tns.2021.3119536
Autor:
George N. Tzintzarov, Jeffrey W. Teng, Amanda N. Bozovich, Gregory R. Allen, Delgermaa Nergui, Yaw A. Mensah, John D. Cressler
Publikováno v:
IEEE Transactions on Nuclear Science. 69:527-533
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c051671499652b12587ca2f80a3a9a1e
https://doi.org/10.1109/tns.2022.3140245
https://doi.org/10.1109/tns.2022.3140245
Autor:
Dale McMorrow, Jeffrey W. Teng, Jacob P. Kimball, Ani Khachatrian, Adrian Ildefonso, John D. Cressler, Sunil G. Rao, Yaw Mensah, George N. Tzintzarov, Arya Moradinia
Publikováno v:
IEEE Transactions on Nuclear Science. 69:381-389
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4714248a3a4358d834a3e3de9ba81f2d
https://doi.org/10.1109/tns.2021.3125794
https://doi.org/10.1109/tns.2021.3125794
Publikováno v:
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::148e62b8a953db5982f2655e821d816f
https://doi.org/10.1109/bcicts53451.2022.10051752
https://doi.org/10.1109/bcicts53451.2022.10051752
Autor:
Harrison P. Lee, Arya Moradinia, Jeffrey W. Teng, Nelson E. Sepúlveda-Ramos, John D. Cressler
Publikováno v:
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba12df83342f7f25fb155064491e81f8
https://doi.org/10.1109/bcicts53451.2022.10051731
https://doi.org/10.1109/bcicts53451.2022.10051731
Autor:
Adrian Ildefonso, John D. Cressler, En Xia Zhang, Hanbin Ying, Xun Li, Arya Moradinia, Peng Fei Wang, George N. Tzintzarov, Jeffrey W. Teng, Daniel M. Fleetwood
Publikováno v:
IEEE Transactions on Nuclear Science. 68:949-957
Statistical analysis is performed on the totalionizing-dose (TID) response of fourth-generation silicon–germanium heterojunction bipolar transistors, revealing an increasing variance in base current with increasing dose. A 10-fold increase is obser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf5220acbe12c4bcd729dc383943449c
https://doi.org/10.1109/tns.2020.3048669
https://doi.org/10.1109/tns.2020.3048669
Autor:
Albert Djikeng, George N. Tzintzarov, Patrick S. Goley, Ani Khachatrian, Stephen P. Buchner, Adrian Ildefonso, Prahlad Iyengar, Joel M. Hales, Ryan Bahr, Dale McMorrow, John D. Cressler, Jeffrey W. Teng, Milad Frounchi
Publikováno v:
IEEE Transactions on Nuclear Science. 68:785-792
Optical single-event transients (OSETs) were measured for the first time in integrated silicon-photonic waveguides. A custom test fixture and novel experimental setup were used at the U.S. Naval Research Laboratory to induce a dense cloud of electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7175a167f2f197bba2302b21f8aacdf1
https://doi.org/10.1109/tns.2021.3051802
https://doi.org/10.1109/tns.2021.3051802