Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Jeffrey W. Anthis"'
Autor:
Kuratomi Takashi, David Thompson, Paul Mack, I-Cheng Chen, Christopher R. Brundle, Ghazal Saheli, Christopher Lazik, Jeffrey W. Anthis
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. 234:57-63
A particular wafer processing step involves deposition of a Ti thin film (˜6 nm to ˜13 nm) on Si, under processing conditions intended to form a silicide with specific electrical properties. It is difficult, however, to distinguish silicide formati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f9938769df8064d07c15a17a048604c
https://doi.org/10.1016/j.elspec.2019.04.004
https://doi.org/10.1016/j.elspec.2019.04.004
Autor:
Mei Chang, Jeffrey W. Anthis, Naomi Yoshida, David Thompson, Min Xu, Xinyu Fu, Yu Lei, Atif Noori, Wei Tang, Xinliang Lu, Haichun Yang, Seshadri Ganguli, San-Ho Yu, Jerry Gelatos, Michael S. Chen, Srinivas Gandikota, Adam Brand, Miller Allen
Publikováno v:
ECS Transactions. 50:171-176
Emerging 3D transistor structures and continued scaling requires conformal metal gate options with low resistivity, band edge work function and improved barrier properties. Doping ALD TiN with Si improves barrier properties shown with 10X reduced gat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d1b8089f587a0aa488d711361efe792
https://doi.org/10.1149/05004.0171ecst
https://doi.org/10.1149/05004.0171ecst
Publikováno v:
ECS Transactions. 16:79-86
Atomic Layer Deposition (ALD) has been identified as one of the primary technologies to fabricate devices with novel architecture. This requires design and development of advanced ALD precursors that can withstand the rigors of various integration st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::729da3b3a7ecfbeaa869e49f059ea279
https://doi.org/10.1149/1.2979983
https://doi.org/10.1149/1.2979983
Publikováno v:
Organometallics. 25:3114-3117
Tridentate phosphine pincer ligands facilitate the protonolysis of cationic Pt−CH3 compounds (to Pt dications and CH4) with the ammonium acid Ph2NH2·BF4. Large rate enhancements over nonpincer analogues (>50 000) are observed. A mechanism is propo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7f57966b1a0b7a283f5ab0956c59af7
https://doi.org/10.1021/om051066b
https://doi.org/10.1021/om051066b
Autor:
Ravi Kanjolia, J.S. Bailey, Nam X. Nguyen, Michael J. Suscavage, Jeffrey W. Anthis, Lesley M. Smith, Chris Santeufemio, David W. Weyburne, Mitchell Fait, Raj Odedra, Sheng Qi Wang, C. Yapp, Vladimir Tassev, David Bliss
Publikováno v:
Journal of Crystal Growth. 275:e1307-e1311
The development and scaling-up of a process for the growth of large diameter aluminum nitride thick films on 2-in sapphire is described. Optimal growth rates between 10 and 15 μ m/h have been reached by adjustment of the reactor pressure, substrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::529ed3095143ec6da5fbab9bc6d383df
https://doi.org/10.1016/j.jcrysgro.2004.11.108
https://doi.org/10.1016/j.jcrysgro.2004.11.108
Publikováno v:
Journal of Organometallic Chemistry. 688:121-124
We report herein an efficient synthesis of a series of chelating bis(aryloxide) ligands that can be diverged at a late stage to generate a variety of structures. Based on structural differences between linked and unlinked analogs of six-coordinate ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::315a5a858b9ea61aaa83e8d30a92091a
https://doi.org/10.1016/j.jorganchem.2003.08.046
https://doi.org/10.1016/j.jorganchem.2003.08.046
Publikováno v:
Inorganic chemistry. 43(2)
A new route to sterically tuned, chelating bis(aryloxide) ligands is described and demonstrated by the synthesis of 2,2'-ethylenebis(6-isopropylphenol) (1, H(2)BIPP) and transition metal complexes of its dianion. The utility of these ligands in titan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::054565f42931800f69a6c2127dee3a3b
https://pubmed.ncbi.nlm.nih.gov/14731035
https://pubmed.ncbi.nlm.nih.gov/14731035