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pro vyhledávání: '"Jeffrey Torres-Clarke"'
Publikováno v:
Sensors, Vol 24, Iss 8, p 2646 (2024)
This article presents the design of a low-power low noise amplifier (LNA) implemented in 45 nm silicon-on-insulator (SOI) technology using the gm/ID methodology. The Ka-band LNA achieves a very low power consumption of only 1.98 mW andis the first ti
Externí odkaz:
https://doaj.org/article/8c929950a3f0427c85f61cee0512bb4a