Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Jeffrey S. George"'
Autor:
Jeffrey S. George, Ning Xu, Dolores A. Black, Jeffrey D. Black, Stephen A. Wender, John M. O'Donnell, Elizabeth C. Auden, P. W. Lisowski, Heather Quinn
Publikováno v:
IEEE Transactions on Nuclear Science. 67:29-37
Single-event upsets (SEUs) were measured in thermal neutron-irradiated microcontrollers with 65- and 130-nm-node static random-access memories (SRAMs). The suspected upset mechanism is charge deposition from the energetic byproducts of 10B thermal ne
Autor:
Thomas D. Fairbanks, Heather Quinn, Stephen A. Wender, Elizabeth C. Auden, Joshua M. Pritts, Jeffrey S. George
Publikováno v:
2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC).
Neutron-induced single event burnout was measured in power MOSFET devices using mono-energetic neutron beams at the Triangle Universities Nuclear Laboratory.
Autor:
Stephen A. Wender, Thomas D. Fairbanks, Joshua M. Pritts, Jeffrey S. George, John M. O'Donnell
Publikováno v:
2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC).
We present an approach to extract energy-dependent cross sections from broad-spectrum pulsed neutron beams using time-of-flight measurements. We include data for destructive single-event burnout in several n-channel power MOSFETs.
Autor:
R. Koga, Jeffrey S. George, D. J. Mabry, C. A. Langford, A. D. Yarbrough, S. C. Davis, A. W. Wright
Publikováno v:
2019 IEEE Radiation Effects Data Workshop.
Single Event Effect testing using heavy ions and protons was performed on several commercial components to determine the response of these components to the space radiation environment.
Autor:
David S. Lee, Gregory R. Allen, Gary Swift, Matthew Cannon, Michael Wirthlin, Jeffrey S. George, Rokutaro Koga, Kangsen Huey
Publikováno v:
2015 IEEE Radiation Effects Data Workshop (REDW).
Autor:
Kangsen Huey, David S. Lee, Jeffrey S. George, Gary Swift, Gregory R. Allen, Rokutaro Koga, Matthew Cannon, Michael Wirthlin
Publikováno v:
2014 IEEE Radiation Effects Data Workshop (REDW).
This study examines the single-event response of the Xilinx 28 nm Kintex-7 FPGA irradiated with heavy ions. Results for single-event effects on configuration SRAM cells, user-accessible Flip-Flop cells, and BlockRAM™ memory are provided. This study
Publikováno v:
2013 IEEE Radiation Effects Data Workshop (REDW).
We present observations of single event burnout in 200V Schottky diodes used in hybrid DC-DC converters. Two diode types were tested and showed varying sensitivity to heavy ions and protons.
Publikováno v:
2009 IEEE Radiation Effects Data Workshop.
We present new single event effects testing results for the RTAX2000S field-programmable-gate-array. We tested sequential and combinational logic structures, input/output blocks, and embedded RAM with ions and protons.