Zobrazeno 1 - 10
of 50
pro vyhledávání: '"Jeffrey N. Miller"'
Autor:
Daniel B. Roitman, Ronald L. Moon, Jeffrey N. Miller, Mark R. Hueschen, James R. Sheats, Homer Antoniadis
Publikováno v:
Macromolecular Symposia. 125:59-67
A study of the main failure mechanisms in vacuum vapor-deposited organic light-emitting diodes (LED's) is presented. Three degradation modes were identified for a prototype bilayer ITO/TPD/Alq 3 /Mg/Ag device: a) formation and growth of black non-emi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6838f0a5080924d9558725670e1b4e60
https://doi.org/10.1002/masy.19981250104
https://doi.org/10.1002/masy.19981250104
Publikováno v:
Journal of Applied Physics. 76:2255-2259
Relaxation of minority electrons in carbon‐doped GaAs with hole concentrations as high as 6×1019 cm−3 is measured with femtosecond optical techniques. The relaxation of photoexcited electrons depends strongly on the doping level above 1019 cm−
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7058b9f35d467232a6311e8eb26a7ff1
https://doi.org/10.1063/1.357644
https://doi.org/10.1063/1.357644
Publikováno v:
Physical Review B. 44:13504-13512
The optical properties of a GaAs/${\mathrm{Al}}_{0.3}$${\mathrm{Ga}}_{0.7}$As hetero-n-i-p-i crystal with GaAs quantum wells in the intrinsic region (``type II'') have been investigated by photoreflectance measurements. To understand the complex spec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b603d5d49cce7e6e4e046aedc8432da2
https://doi.org/10.1103/physrevb.44.13504
https://doi.org/10.1103/physrevb.44.13504
Autor:
Jeffrey N. Miller
Publikováno v:
III-Vs Review. 4:44-47
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae21788de7276a7ee4ff1b3c3b31fff2
https://doi.org/10.1016/0961-1290(91)90230-t
https://doi.org/10.1016/0961-1290(91)90230-t
Publikováno v:
Journal of Applied Physics. 67:434-438
The recombination dynamics of GaAs multiple quantum wells as a function of barrier widths LB are studied in a semiconductor in the range between LB=0.87 nm (superlattice) and LB=18.1 nm (uncoupled wells) by means of cathodo‐ and photoluminescence.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e26f1e5936864f663d1bbf73de037d04
https://doi.org/10.1063/1.345220
https://doi.org/10.1063/1.345220
Autor:
John E. Bowers, F. Mertz, M. Mehta, Danny E. Mars, Jeffrey N. Miller, David P. Bour, Virginia M. Robbins, Steven D. Lester
Publikováno v:
2006 Optical Fiber Communication Conference and the National Fiber Optic Engineers Conference.
We present wafer-bonded long-wavelength VCSEL operation between 1300 nm and 1330 nm demonstrating 2.5 mW single mode output power at 20/spl deg/C and 1.7 mW at 70/spl deg/C. We also show small signal 3-dB bandwidths greater than 10 GHz and 8 GHz at 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ea4935302a696848eb753a22f137a42
https://doi.org/10.1109/ofc.2006.215937
https://doi.org/10.1109/ofc.2006.215937
Publikováno v:
SPIE Proceedings.
We demonstrate novel electrically driven 1330 and 1550 nm VCSELs using conventional InGaAsP active regions. The VCSELs employ two TiO2/SiO2 DBR mirrors and an InAlAs tunnel junction that converts electrons to holes, minimizing free carrier losses in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63afe38409be7a4a3c2abd4c2829673d
https://doi.org/10.1117/12.540323
https://doi.org/10.1117/12.540323
Autor:
Thomas A. Knotts, Kyle Frischknecht, Travis N. Blalock, Ken Nishimura, Jeffrey N. Miller, Daniel B. Roitman, Homer Antoniadis, Ronald L. Moon, Jeremy A. Theil, Chris Bright, Howard E. Abraham
Publikováno v:
SPIE Proceedings.
Capable self-emissive polymers are being developed for use as emitting materials for a variety of display applications. This paper describes the use of standard CMOS integrated circuit silicon wafer technology along with a spin-cast polyfluorene-base
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc471398b243966f683073680815957f
https://doi.org/10.1117/12.416915
https://doi.org/10.1117/12.416915
Autor:
Christopher H. Lowery, Serge L Rudaz, Richard Mann, Richard P. Schneider, Werner Goetz, Michael R. Krames, Eric Scott Johnson, Ying-Lan Chang, Lou W. Cook, T. Takeuchi, M. Heuschen, Ghulam Hasnain, Dan A. Steigerwald, Tun S. Tan, John F. Thompson, G. Christenson, Christophe P. Kocot, R Scott Kern, M. J. Ludowise, Paul S. Martin, William R. Imler, Nathan F. Gardner, J. O'Shea, M. Maranowski, Frederick A. Kish, David Paul Basile, Jeffrey N. Miller, Gerd O. Mueller, Regina Mueller-Mach, Jingxi Yu, D. Collins, S. Jeffrey Rosner, Steven D. Lester, Jonathan J. Wierer, Reena Khare, Robert M Fletcher, Alice Edwards, M. G. Craford, Kevin Killeen, Steven A Maranowski
Publikováno v:
SPIE Proceedings.
Currently, commercial LEDs based on AlGaInN emit light efficiently from the ultraviolet-blue to the green portion of the visible wavelength spectrum. Data are presented on AlGaInN LEDs grown by organometallic vapor phase epitaxy (OMVPE). Designs for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e1d37aed6e7815238dea53a3d891141
https://doi.org/10.1117/12.382822
https://doi.org/10.1117/12.382822
Autor:
Jeffrey N. Miller
Publikováno v:
III-Vs Review. 4:18-20
One of the highlights of the IEEE GaAs IC Symposium was the Short Course. It was a higly successful start to a successful conference and drew record attendance. The course was entitled GaAs Digital IC Technology, covering device technology and servin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68dced8c595233424bd87c7021044cf6
https://doi.org/10.1016/0961-1290(91)90186-z
https://doi.org/10.1016/0961-1290(91)90186-z