Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Jeffrey L. Harmon"'
Publikováno v:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).
The development of high-performance high band gap tunnel junctions is critical for producing efficient multijunction photovoltaic cells that can operate at high solar concentrations. The n-InGaP/GaAs/p-AlGaAs TJ has been demonstrated to produce peak
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::019e7032b2843ab07fc6248767bc022d
https://doi.org/10.1109/pvsc.2016.7750052
https://doi.org/10.1109/pvsc.2016.7750052
Publikováno v:
AIP Conference Proceedings.
The availability of high band gap (>1.9 eV) tunnel junctions (TJ) with large peak current densities (Jpk) is crucial for the development of multijunction photovoltaic cells that can operate at concentrations above 1000 suns. Existing TJ designs inclu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18bc559e3926922d55827513fa53a45e
https://doi.org/10.1063/1.4962071
https://doi.org/10.1063/1.4962071
Publikováno v:
Industrial & Engineering Chemistry Research. 36:122-129
In this paper we demonstrate a recursive algorithm to control the temperature profile of a batch reactor sustaining an exothermic reaction. The algorithm suggested here does not assume any prior knowledge of the detailed process, i.e., kinetics, etc.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bbf53f39b4f06692378aaca91b7d41f
https://doi.org/10.1021/ie9505569
https://doi.org/10.1021/ie9505569
Autor:
Geoffrey K. Bradshaw, Jay Hauser, Jeffrey L. Harmon, Peter C. Colter, Salah M. Bedair, Zachary Carlin, Joshua P. Samberg
Publikováno v:
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).
Cost improvements in concentrated photovoltaic (CPV) systems can be achieved by operating at increased solar concentration. Current multijunction CPV systems are limited to about 1000× concentration by the performance of the tunnel junctions (TJ) wh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e7fc773d4b5af100fa67de7a687b775
https://doi.org/10.1109/pvsc.2013.6744883
https://doi.org/10.1109/pvsc.2013.6744883
Publikováno v:
Applied Physics Letters. 108:203903
The performance of n+-InGaP(Te)/p+-AlGaAs(C) high band gap tunnel junctions (TJ) is critical for achieving high efficiency in multijunction photovoltaics. Several limitations for as grown and annealed TJ can be attributed to the Te doping of InGaP an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01039e35266c9df938f700e6d70341e4
https://doi.org/10.1063/1.4951690
https://doi.org/10.1063/1.4951690
Autor:
Geoffrey K. Bradshaw, Jay Hauser, Conrad Zachary Carlin, Salah M. Bedair, Nadia A. El-Masry, Jeffrey L. Harmon, Joshua P. Samberg, Peter C. Colter
Publikováno v:
MRS Proceedings. 1211
InGaAs can be used to enhance the response of solar cells past the 1.43 eV cutoff of GaAs. Strained-layer superlattice (SLS) structures with high indium and phosphorus compositions (up to 35% and 68% respectively) have been grown successfully. SLS so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cc3b2a5f6298994ec0ba92f8b9dac64
https://doi.org/10.1557/proc-1211-r11-09
https://doi.org/10.1557/proc-1211-r11-09
Autor:
Geoffrey K. Bradshaw, Joshua P. Samberg, Peter C. Colter, Conrad Zachary Carlin, Jeffrey L. Harmon, Salah M. Bedair
Publikováno v:
MRS Proceedings. 1211
Characteristics of strained layer superlattices (SLS) consisting of alternating layers InxGa1-xAs and GaAs1-yPy are examined for use in high efficiency solar cells. The effects of SLS quantum barrier widths on tunneling probability and short circuit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d56be6cc2d482b09e185353439865f8
https://doi.org/10.1557/proc-1211-r02-08
https://doi.org/10.1557/proc-1211-r02-08
Autor:
Jay Hauser, Jeffrey L. Harmon, Geoff K. Bradshaw, C. Zachary Carlin, Joshua P. Samberg, Salah M. Bedair, J. B. Allen, Peter C. Colter
Publikováno v:
Applied Physics Letters. 103:103503
The effect of the heterojunction interface on the performance of high bandgap InxGa1−xP:Te/Al0.6Ga0.4As:C tunnel junctions (TJs) was investigated. The insertion of 30 A of GaAs:Te at the junction interface resulted in a peak current of 1000 A/cm2 a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20ce2fd9da8db076ec00b89fb976eb70
https://doi.org/10.1063/1.4819917
https://doi.org/10.1063/1.4819917