Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Jeffrey Joseph Nasadoski"'
Autor:
Mohammed Agamy, Ramanujam Ramabhadran, Ahmed Elasser, Han Peng, Kum-Kang Huh, Jeffrey Joseph Nasadoski
Publikováno v:
2018 IEEE Energy Conversion Congress and Exposition (ECCE).
While Silicon Carbide (SiC) power devices have dominated the wide bandgap landscape in the past 20 years, Gallium Nitride (GaN) power devices have also been the subject of numerous investigations and research work. Even though GaN lacks a bulk substr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19e886ede01dd0b5cea74b10dd574e9e
https://doi.org/10.1109/ecce.2018.8557483
https://doi.org/10.1109/ecce.2018.8557483
Autor:
S. D. Arthur, Z. Stum, Ljubisa Dragoljub Stevanovic, Michael Joseph Schutten, J. L. Garrett, Peter Almern Losee, Jeffrey Joseph Nasadoski, Greg Dunne, Kevin Matocha
Publikováno v:
IEEE Transactions on Electron Devices. 55:1824-1829
SiC vertical MOSFETs were fabricated and characterized, achieving blocking voltages around 1 kV and specific on-resistances as low as RSP,ON=8.3 mOmegamiddotcm2. DC and transient characteristics are shown. Room and elevated temperature (up to 200degC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::425b41850143a6baf8fe5b632a7d9344
https://doi.org/10.1109/ted.2008.926592
https://doi.org/10.1109/ted.2008.926592
Autor:
Fengfeng Tao, Philip Michael Cioffi, Peter Almern Losee, Frank Jakob John Mueller, Brian Lynn Rowden, Greg Dunne, Stacey Kennerly, Jeffrey Joseph Nasadoski, Alfred Permuy, Alexander Viktorovich Bolotnikov, Ljubisa Dragoljub Stevanovic, Ravisekhar Nadimpalli Raju, Maja Harfman-Todorovic
Publikováno v:
2015 IEEE Applied Power Electronics Conference and Exposition (APEC).
This paper presents the latest 1.2kV–2.2kV SiC MOSFETs designed to maximize SiC device benefits for high-power, medium voltage power conversion applications. 1.2kV, 1.7kV and 2.2kV devices with die size of 4.5mm × 4.5mm were fabricated, exhibiting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98c0d93cd58531c7fc86a62f0c0b533f
https://doi.org/10.1109/apec.2015.7104691
https://doi.org/10.1109/apec.2015.7104691
Autor:
Ljubisa Dragoljub Stevanovic, Mohammed Agamy, Jorge Mari, Bertrand Bastien, Zachary Stum, Peter Almern Losee, Matthias Menzel, Ahmed Elasser, Alexander Viktorovich Bolotnikov, Ravisekhar Nadimpalli Raju, Jeffrey Joseph Nasadoski
Publikováno v:
2012 IEEE Energy Conversion Congress and Exposition (ECCE).
High-voltage and high-current SiC bipolar diode modules are fabricated and characterized under static and dynamic conditions. The modules are built using 6 × 6 mm2 SiC chips that are fabricated on 3-in SiC substrates. Individual chips were also pack
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bbe299456f9b98c9ac2288ed0d6a83d5
https://doi.org/10.1109/ecce.2012.6342485
https://doi.org/10.1109/ecce.2012.6342485
Autor:
J. L. Garrett, Peter Almern Losee, Avinash Srikrishnan Kashyap, Jeffrey Joseph Nasadoski, John Stanley Glaser, Kevin Matocha, Ljubisa Dragoljub Stevanovic
Publikováno v:
2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).
RECENT progress in wide bandgap power (WBG) switches shows great potential. Silicon carbide (SiC) is a promising material for power devices with breakdown voltages of several hundred volts up to 10 kV. SiC Schottky power diodes have achieved widespre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c845cd02bd5e0753ae241666f9bd2d68
https://doi.org/10.1109/apec.2011.5744724
https://doi.org/10.1109/apec.2011.5744724
Autor:
Stephen Daley Arthur, Peter Almern Losee, Jeffrey Joseph Nasadoski, Kevin Matocha, Ljubisa Dragoljub Stevanovic, John Stanley Glaser
Publikováno v:
2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).
Emerging silicon carbide (SiC) MOSFET power devices promise to displace silicon IGBTs from the majority of challenging power electronics applications by enabling superior efficiency and power density, as well as capability to operate at higher temper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a907397076fecd0a5da7c02e5f2ffea
https://doi.org/10.1109/apec.2010.5433640
https://doi.org/10.1109/apec.2010.5433640
Publikováno v:
2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition.
Designers of power conversion circuits are under relentless pressure to increase power density while maintaining high efficiency. A primary path to higher power density is the use of increased switching frequency. In this paper it is argued that the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f093afd0b626cf1803e8c7165f68a82
https://doi.org/10.1109/apec.2009.4802804
https://doi.org/10.1109/apec.2009.4802804