Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Jeffrey J. Spiegelman"'
Autor:
Cheng-hsuan Kuo, Daniel Alvarez, SeongUK Yun, Victor Wang, Jeffrey J. Spiegelman, Harsono Simka, Andrew C. Kummel, Zichen Zhang
Publikováno v:
2021 IEEE International Interconnect Technology Conference (IITC).
A low temperature (300°C–350°C) TiN thermal ALD process using titanium tetrachloride (TiCl 4 ) and anhydrous hydrazine was developed to yield films with resistivities below 200 μohm-cm. Surface treatments such as Ar plasma and atomic hydrogen we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f6fc0ad4d83278a9a713daaa505b089
https://doi.org/10.1109/iitc51362.2021.9537463
https://doi.org/10.1109/iitc51362.2021.9537463
Autor:
Jun Hong Park, Jeffrey J. Spiegelman, Iljo Kwak, Steven Wolf, Andrew C. Kummel, Michael Breeden, Daniel Alvarez, Mehul Naik, Mahmut Sami Kavrik
Publikováno v:
Applied Surface Science. 462:1029-1035
Thermal ALD of TaNx and TiNx films was performed using hydrazine (N2H4) as a reactive N-containing source. Ultralow temperature (100 °C and 300 °C) growth of TaNx was observed using N2H4 and tris(diethylamido)(tert-butylimido) tantalum (TBTDET); XP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35a7025f9dfd4da901f67541f9922f2c
https://doi.org/10.1016/j.apsusc.2018.07.153
https://doi.org/10.1016/j.apsusc.2018.07.153
Publikováno v:
2019 Compound Semiconductor Week (CSW).
Aluminum nitride (AlN) ALD has attracted recent attention because it is a direct wide-bandgap, III-V semiconductor with excellent dielectric and piezoelectric properties, good thermal conductivity, and high mechanical strength. There is a need for lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61a134287802d6dc677d8b450292320a
https://doi.org/10.1109/iciprm.2019.8819346
https://doi.org/10.1109/iciprm.2019.8819346
Autor:
Kasra Sardashti, Andrew C. Kummel, Russell J. Holmes, Mary Edmonds, Jeffrey J. Spiegelman, Steven Wolf, Dan Alvarez
Publikováno v:
Solid State Phenomena. 255:31-35
In Situ gas phase passivation methods can enable new channel materials. Toward this end pure anhydrous HOOH and H2NNH2 membrane gas delivery methods were developed. Implementation led to Si-OH passivation of InGaAs(001) at 350C and Si-N-H passivation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2547dee09987c7ee143c9b0887bf3138
https://doi.org/10.4028/www.scientific.net/ssp.255.31
https://doi.org/10.4028/www.scientific.net/ssp.255.31
Autor:
Daniel Alvarez, Katsumasa Suzuki, Hayato Murata, Jeffrey J. Spiegelman, Gaku Tsuchibuchi, Keisuke Andachi
Publikováno v:
ECS Meeting Abstracts. :1668-1668
Emerging devices (Logic and Advanced Memory) require high quality thin (5-20 Å) electrode and barrier films. Difficult thermal budget constraints are now being placed on well-known materials such as TiN and TaN. Deposition temperature limitations ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::743291647bc1c9691fe0f71bc9d71eec
https://doi.org/10.1149/ma2020-02231668mtgabs
https://doi.org/10.1149/ma2020-02231668mtgabs
Autor:
Mark Raynor, Dan Alvarez, Russell J. Holmes, Keisuke Andachi, Jeffrey J. Spiegelman, Hank Shimizu
Publikováno v:
2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
A novel hydrazine vaporization source has been developed in response to the emerging need for sub-400°C metal nitride deposition. Hydrazine has been demonstrated to be a viable precursor to enable low temperature atomic layer deposition (ALD). Initi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c5280f5b7bf136d35b60368fcad2205
https://doi.org/10.1109/asmc.2017.7969274
https://doi.org/10.1109/asmc.2017.7969274
Autor:
Daniel Biro, Alexandra Walczak, Sebastian Mack, Ralf Preu, Jeffrey J. Spiegelman, Benjamin Thaidigsmann, Andreas Wolf, Edgar Allan Wotke
Publikováno v:
Solar Energy Materials and Solar Cells. 95:2570-2575
Thermal silicon oxides are known to very effectively passivate silicon surfaces. Choosing a water vapor ambient instead of a dry oxygen atmosphere increases the oxidation rate by about one order of magnitude and considerably reduces process time and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7489bdf2ca1d7f2ca828b98cea5d7dd5
https://doi.org/10.1016/j.solmat.2011.03.002
https://doi.org/10.1016/j.solmat.2011.03.002
Autor:
Jeffrey J. Spiegelman, Daniel Alvarez, Mark Raynor, Keisuke Andachi, Hank Shimizu, Russell J. Holmes
Publikováno v:
ECS Meeting Abstracts. :1273-1273
Introduction Next generation channel materials (SiGe, Ge and InGaAs) place very difficult thermal constraints ( SiN passivation layers on new channel materials SiN sidewall spacers and contact etch stop layers TiN for metal gate electrodes TiN or WN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1467aa1127155f52f2222acff2dbeb6b
https://doi.org/10.1149/ma2017-01/26/1273
https://doi.org/10.1149/ma2017-01/26/1273
Autor:
Jeffrey J. Spiegelman, Dan Alvarez
Publikováno v:
2012 38th IEEE Photovoltaic Specialists Conference.
Wet thermal oxidation is an accepted process for generating thick oxide films but is not commonly used for thin oxide films due to issues with film uniformity. For high wafer loading and oxide thicknesses at and below 1000A, dry oxidation has been th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d00708cf440f0b34c66eef2ccdb11cf
https://doi.org/10.1109/pvsc.2012.6317799
https://doi.org/10.1109/pvsc.2012.6317799
Autor:
Said Boumsellek, Jeffrey J. Spiegelman
Publikováno v:
2010 35th IEEE Photovoltaic Specialists Conference.
Water vapor has been shown to have significant effect on thin film layers in ALD, MOCVD, and sputtering processes. Such processes are commonly used to generate TCO layers and modify crystal structures via grain size or defect repair. The ability to d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f59ec1bea33352efb27c62eb5ff80b5b
https://doi.org/10.1109/pvsc.2010.5614612
https://doi.org/10.1109/pvsc.2010.5614612